Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 27 - Single-crystal growth under a protective fluid
Patents for C30B 27 - Single-crystal growth under a protective fluid (584)
04/1987
04/29/1987EP0219776A1 Crucible recovering method and apparatus therefor
03/1987
03/31/1987US4654110 Total immersion crystal growth
03/26/1987WO1987001741A1 Process for producing a semi-isolating substrate made of thermally stable and non-dislocated iii-v material
03/24/1987US4652332 Intermetallics, alloying
02/1987
02/24/1987US4645560 Liquid encapsulation method for growing single semiconductor crystals
02/04/1987EP0210439A1 Method for growing single crystals of dissociative compound semiconductor
12/1986
12/30/1986EP0206541A2 Gallium arsenide single crystals, and process for the preparation thereof
11/1986
11/25/1986CA1214381A1 Method of growing gallium arsenide crystals using boron oxide encapsulant
10/1986
10/29/1986CN85103282A Method and device for growing bar shaped ruby
10/21/1986US4618396 GaAs single crystal and preparation thereof
10/14/1986US4617084 Process for the production of metallic or semimetallic shaped elements
10/14/1986CA1212599A1 Process for manufacturing boron-doped gallium arsenide single crystal
09/1986
09/23/1986US4613486 Semiconductor boule pulling rod
09/03/1986CN86100854A Method for making heavy sb-admixed silicon monocrystal by use of pure nitrogen as protective atmosphere
09/02/1986US4609530 GaAs single crystal with small fluctuation in impurity concentration in the plane perpendicular to the growth direction of the crystal
07/1986
07/02/1986CN85100856A New technique for prepn of monocrystal si chip with perfact layer on the surface
06/1986
06/24/1986US4596700 Apparatus for producing single crystal
05/1986
05/27/1986US4591994 Method and apparatus for controlling shape of single crystal
04/1986
04/29/1986US4585511 Containing small amount of water
04/22/1986US4584174 Single crystal of compound semiconductor of groups III-V with low dislocation density
04/09/1986EP0177132A2 Apparatus for manufacturing compound semiconductor single crystal
04/02/1986EP0176130A1 Process for making a single crystal of an arsenide of gallium and indium
03/1986
03/12/1986EP0174060A1 Method for growing a single crystal
02/1986
02/26/1986EP0172621A2 Method for growing a single crystal of compound semiconductor
02/10/1986CN85100295A Direct-drawing of monocrystalline silicon with nitrogen blanketing
01/1986
01/02/1986EP0166500A1 An apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochraiski (LEC) process
12/1985
12/31/1985US4562106 Product made by method of entraining dislocations and other crystalline defects
12/03/1985US4556784 Method for controlling vertically arranged heaters in a crystal pulling device
11/1985
11/27/1985EP0162467A2 Device for growing single crystals of dissociative compounds
11/06/1985EP0160373A2 Single crystal of compound semiconductor of groups III-V with low dislocation density
10/1985
10/23/1985EP0159113A1 Process and apparatus for growing single crystals of III - V compound semiconductor
09/1985
09/26/1985EP0087426A4 Lateral epitaxial growth by seeded solidification.
09/03/1985US4539067 Computerized; measuring weight of single crystal pulled
08/1985
08/28/1985EP0153119A2 Single crystal of compound semiconductor of groups III-V with low dislocation density
08/27/1985US4537652 Process for preparing single crystal
07/1985
07/31/1985EP0149898A2 An LEC method and apparatus for growing a single crystal of compound semiconductors
07/24/1985EP0149189A1 GaAs single crystal and preparation thereof
07/24/1985EP0149082A2 GaAs single crystal and preparation thereof
07/17/1985EP0148396A2 Apparatus for producing gallium arsenide single crystal and gallium arsenide single crystal produced by said apparatus
07/09/1985US4528061 Process for manufacturing boron-doped gallium arsenide single crystal
06/1985
06/26/1985EP0146002A2 Apparatus for production of a single crystal and monitoring of the production
06/19/1985EP0144512A1 Semiconductor boule pulling rod
05/1985
05/15/1985EP0141649A1 An apparatus for pulling a single crystal
05/15/1985EP0141495A1 A method for pulling a single crystal
05/08/1985EP0140509A1 An lec method and apparatus for growing single crystal
04/1985
04/03/1985EP0136197A1 Method and apparatus for the production of an object by casting in a liquid medium
04/03/1985EP0136196A1 Process for making thin or massive, metallic or semimetallic objects, especially of silicium
01/1985
01/29/1985US4496424 Method for manufacture of III-V compound semiconducting single crystal
12/1984
12/19/1984EP0128538A2 Process for preparing single crystal
11/1984
11/20/1984US4483735 Manufacturing process of semi-insulating gallium arsenide single crystal
10/1984
10/30/1984US4479846 Method of entraining dislocations and other crystalline defects in heated film contacting patterned region
10/23/1984US4478675 Method of producing GaAs single crystals doped with boron
08/1984
08/08/1984EP0115121A2 Method and apparatus for controlling shape of single crystal
07/1984
07/25/1984EP0036891B1 Minimization of strain in single crystals
05/1984
05/16/1984EP0108259A2 Method for controlling vertically arranged heaters in a crystal pulling device
05/01/1984CA1166556A1 Minimization of strain in single crystals
04/1984
04/04/1984EP0104741A1 Process for growing crystalline material
04/04/1984EP0104559A1 Pulling method of single crystals
02/1984
02/14/1984US4431476 Method for manufacturing gallium phosphide single crystals
10/1983
10/26/1983EP0092409A1 Process for manufacturing boron-doped gallium arsenide single crystal
09/1983
09/07/1983EP0087426A1 Lateral epitaxial growth by seeded solidification.
08/1983
08/09/1983US4397813 Apparatus for manufacturing single crystals
02/1983
02/01/1983US4371421 Lateral epitaxial growth by seeded solidification
10/1982
10/28/1982WO1982003639A1 Lateral epitaxial growth by seeded solidification
10/12/1982US4353875 Apparatus for growing crystalline materials
07/1982
07/28/1982EP0056586A2 Method for manufacturing gallium phosphide single crystals
07/28/1982EP0056572A2 Method and apparatus for manufacturing single crystals
01/1982
01/12/1982US4310492 Apparatus for making a single crystal
12/1981
12/01/1981US4303464 Method of manufacturing gallium phosphide single crystals with low defect density
11/1981
11/10/1981US4299650 By reduction of pressure following crystallization
05/1981
05/26/1981US4269652 Method for growing crystalline materials
05/05/1981US4265661 And phosphides, hollow container of encapsulant for reactants
04/1981
04/28/1981US4264385 Growing of crystals
04/16/1981WO1981001016A1 Minimization of strain in single crystals
10/1980
10/28/1980US4230494 Article highly resistant to corrosion by gallium phosphide and gallium arsenide
07/1980
07/08/1980US4211600 Pulling crystal from melt through slit
07/01/1980CA1080588A1 Method of forming and growing a single crystal of a semiconductor compound
04/1980
04/08/1980US4197273 Apparatus for controlling the directional solidification of a liquid-solid system
04/01/1980US4196171 Apparatus for making a single crystal of III-V compound semiconductive material
09/1978
09/12/1978CA1038268A1 Growing single crystals in a crucible
06/1978
06/20/1978US4096024 Crystal growth
04/1978
04/11/1978US4083748 Group ii-vi or group iii-v metal compound
09/1976
09/14/1976US3980438 Apparatus for forming semiconductor crystals of essentially uniform diameter
06/1976
06/29/1976US3966881 Method of making a single crystal intermetallic compound semiconductor
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