| Patents for C30B 27 - Single-crystal growth under a protective fluid (584) |
|---|
| 06/21/2000 | CA2292853A1 Process and apparatus for synthesizing and growing crystals |
| 05/31/2000 | CN1255169A Low defect density, ideal oxygen precipitating silicon |
| 01/26/2000 | EP0973964A1 Low defect density, self-interstitial dominated silicon |
| 01/26/2000 | EP0973963A1 Low defect density silicon |
| 01/19/2000 | EP0972094A1 Low defect density, vacancy dominated silicon |
| 10/06/1999 | EP0947609A2 Method of preparing a compound semiconductor crystal and compound semiconductor crystal |
| 09/01/1999 | CN1044921C Apparatus and method for preparing single crystal |
| 07/28/1999 | EP0931184A1 Process for actively controlling defects during gaas crystal growth |
| 07/20/1999 | US5925147 Process for producing single crystals |
| 07/06/1999 | US5919302 Low defect density vacancy dominated silicon |
| 05/18/1999 | US5904768 Adjusting gas pressure; aspirating vapors and particles away from melt |
| 12/08/1998 | US5846322 Apparatus for drawing single crystals |
| 10/15/1998 | WO1998045510A1 Low defect density, self-interstitial dominated silicon |
| 10/15/1998 | WO1998045509A1 Low defect density silicon |
| 10/15/1998 | WO1998045508A1 Low defect density, vacancy dominated silicon |
| 07/29/1998 | CN1188821A Process and apparatus for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic |
| 06/09/1998 | US5762865 Used to grow single crystal of semiconductors |
| 04/22/1998 | EP0837159A1 Process and apparatus for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic |
| 04/02/1998 | DE19638583A1 Verfahren zur aktiven Defektsteuerung bei der Züchtung von GaAs-Kristallen A method of active defect control for the growth of GaAs crystals |
| 03/26/1998 | WO1998012364A1 Process for actively controlling defects during gaas crystal growth |
| 03/24/1998 | US5730799 Device for producing single crystals |
| 10/08/1997 | EP0799913A1 Apparatus for pulling single crystals |
| 08/21/1997 | DE19705022A1 Boron nitride crucible with specified absorption coefficient |
| 11/26/1996 | US5578123 Apparatus and method for preparing a single crystal |
| 08/28/1996 | CN1129747A Apparatus and method for preparing single crystal |
| 06/05/1996 | EP0715005A1 Apparatus and process for producing single crystal |
| 05/14/1996 | US5515810 Heating molten gallium arsenide and boron oxide sealing compound in airtight vessel, pulling up molten gallium arsenide liquid at high pressure |
| 03/20/1996 | EP0702100A1 Apparatus and method for manufacturing single-crystal material |
| 02/27/1996 | US5493984 Terbium aluminate and method for its production |
| 12/05/1995 | US5471945 Method and apparatus for forming a semiconductor boule |
| 12/05/1995 | US5471938 Process for growing multielement compound single crystal |
| 10/03/1995 | US5454346 Process for growing multielement compound single crystal |
| 05/30/1995 | US5419277 Method and apparatus for producing a Czochralski growth semiconductor single-crystal |
| 05/16/1995 | US5415125 Method of forming a semiconductor boule |
| 03/28/1995 | US5400742 Method of manufacturing compound semiconductor and apparatus |
| 03/07/1995 | US5394830 Apparatus and method for growing long single crystals in a liquid encapsulated Czochralski process |
| 12/08/1994 | WO1994028206A1 Apparatus and method for manufacturing single-crystal material |
| 11/08/1994 | US5361721 Continuous process; from molten polycrystals such as silicon |
| 08/31/1994 | EP0612867A1 Inert gas rectifying/blowing apparatus for single crystal pulling device |
| 08/17/1994 | EP0610830A1 Method and apparatus for producing a Czochralski growth semiconductor single-crystal |
| 02/02/1994 | EP0580953A1 GaP light emitting device and method for fabricating the same |
| 01/05/1994 | CN1080334A Method for growth of tetravalent chromium doping high-temp oxide crystal using protective iridium crucible |
| 10/26/1993 | US5256381 Apparatus for growing single crystals of III-V compound semiconductors |
| 10/12/1993 | US5252175 Capillary pressure relief for magnetic Kyropoulos growth of semiconductor crystals |
| 08/11/1993 | EP0555040A1 A single crystal pulling apparatus |
| 08/10/1993 | US5234534 Pretreatment of holding the substrate and a solution in a mixture of 80% hydrogen and an inert gas; before starting changing to a 60% hydrogen mixture |
| 05/04/1993 | CA1317202C Method of drawing-up a single crystal using a double-crucible apparatus and double-crucible apparatus therefor |
| 02/03/1993 | EP0525617A2 Liquid-phase growth process of compound semiconductor |
| 12/15/1992 | CA1311402C Process for the preparation of doped 3-5 monocristalline semi-dielectrics and their applications |
| 09/08/1992 | US5145550 Boron oxide encapsulant |
| 07/21/1992 | CA1305397C Method for producing a semi-insulating substrate made of a fault-free thermally stable iii-v material |
| 11/13/1991 | CN1014727B Method of controlling nitrogen content in cz silicon single crystal |
| 08/20/1991 | US5041186 Method for manufacturing compound semiconductor single crystals using a hydrogen monitor gas |
| 07/23/1991 | CA1286571C Crucible recovering method and apparatus therefor |
| 07/09/1991 | US5030315 Seeding gallium-arsenic intermetallic from a melt having controlled stoichiometry |
| 06/04/1991 | US5021118 Crystallization, having uniform impurity concentration; seeding |
| 01/22/1991 | CA1279239C Process of pulling a crystal |
| 12/11/1990 | CA1277576C Gallium arsenide single crystals with low dislocation density and high purity |
| 11/27/1990 | US4973454 Constant impurity concentration |
| 07/31/1990 | US4944834 Process of pulling a crystal |
| 07/03/1990 | US4938837 Semiconductor single crystal drawing |
| 06/20/1990 | EP0373899A2 Monocrystal ingot pulling apparatus |
| 06/20/1990 | CN1008452B New technique for prepn of monocrystal silicon chip with perfact layer on the surface |
| 04/04/1990 | EP0244479B1 Process for producing a semi-isolating substrate made of thermally stable and non-dislocated iii-v material |
| 03/27/1990 | US4911780 LEC method for growing a single crystal of compound semiconductors |
| 03/14/1990 | CN1040400A Method of controlling nitrogen content in cz silicon single crystal |
| 02/28/1990 | EP0355833A2 Method of producing compound semiconductor single crystal |
| 09/05/1989 | US4863554 Process for pulling a single crystal |
| 08/01/1989 | US4853077 Process for the preparation of mono-crystalline 3-5 semi-insulating materials by doping and use of the semi-insulating materials thus obtained |
| 07/26/1989 | EP0087426B1 Lateral epitaxial growth by seeded solidification |
| 07/11/1989 | US4846927 Gallium arsenide, encapsulation |
| 05/30/1989 | CA1254818A1 Apparatus for producing gallium arsenide single crystal and gallium arsenide single crystal produced by said apparatus |
| 04/25/1989 | US4824520 Liquid encapsulated crystal growth |
| 04/05/1989 | CN1003797B Preparation method of micronitrogen,low-oxygen, low-carbon, vertical pull monocrystalline silicon |
| 12/15/1988 | DE3815575A1 Halbisolierender gaas-einkristall mit gesteuerter konzentration an verunreinigungen und verfahren zu seiner herstellung Semi-insulating GaAs single crystal with a controlled concentration of impurities, and process for its preparation |
| 12/14/1988 | CN88102558A Method of manufacturing silicon single crystals of medium or low resistance by direct drawing |
| 11/08/1988 | US4783235 Avoidance of supercooling and impurity precipitation by lowering pulling speed; liquid encapsulated czochralski |
| 10/11/1988 | US4776971 Gallium arsenide single crystals with low dislocation density and high purity |
| 09/27/1988 | CA1242375A1 Single crystal of compound semiconductor of groups iii-v with low dislocation density |
| 08/02/1988 | CA1239851A1 Single crystal of compound semiconductor of groups iii-v with low dislocation density |
| 07/27/1988 | CN88100307A Preparation method of a micronitrogen, low-oxygen, low-carbon, vertical-pull monocrystalline silicon |
| 07/05/1988 | CA1238839A1 Apparatus for producing single crystal |
| 06/14/1988 | US4750969 Method for growing single crystals of dissociative compound semiconductor |
| 06/07/1988 | CA1237640A1 Process for preparing single crystal |
| 04/26/1988 | US4740264 Liquid encapsulated float zone process and apparatus |
| 04/13/1988 | EP0263543A1 Process for producing a single crystal of a III-V semiconducting compound using the Czochralski method by liquid encapsulation |
| 03/29/1988 | US4734267 Apparatus for growing compound semiconductor single crystals |
| 02/24/1988 | CN87105811A Gas phase nitrogen-doping method for straight-pulling monocrystalline silicon |
| 01/26/1988 | US4721539 Large single crystal quaternary alloys of IB-IIIA-SE2 and methods of synthesizing the same |
| 10/28/1987 | EP0243231A1 Process for preparing III-V group single crystal semi-isolators by doping, and use of the semi-isolators so obtained |
| 08/11/1987 | US4686091 Apparatus for manufacturing compound semiconductor single crystal |
| 08/04/1987 | US4684515 Single crystal article |
| 07/07/1987 | US4678534 Method for growing a single crystal |
| 07/01/1987 | EP0226794A1 Method of drawing-up a single crystal using a double-crucible apparatus and double-crucible apparatus therefor |
| 06/02/1987 | US4670176 Single crystal of compound semiconductor of groups III-V with low dislocation density |
| 06/02/1987 | US4670088 Lateral epitaxial growth by seeded solidification |
| 06/02/1987 | CA1222436A1 Process for growing crystalline material |
| 05/26/1987 | US4668481 Apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochralski (LEC) process |
| 05/12/1987 | US4664742 Method for growing single crystals of dissociative compounds |
| 04/29/1987 | EP0219966A2 Process for pulling a crystal |