Patents
Patents for H01S 5 - Semiconductor lasers (52,420)
03/2002
03/28/2002WO2002025782A2 Optical transmitter comprising a stepwise tunable laser
03/28/2002WO2002025781A2 Micro-laser
03/28/2002WO2002025746A1 Nitride semiconductor light emitting element and optical device containing it
03/28/2002WO2002025745A2 Semiconductor nanocrystalline materials and their uses
03/28/2002WO2002025737A1 High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region
03/28/2002WO2002025706A2 Apparatus and method for batch processing semiconductor substrates in making semiconductor lasers
03/28/2002WO2002025705A2 Quantum dot devices
03/28/2002WO2002025335A1 Electro-optic interconnect circuit board
03/28/2002WO2002024295A2 Optical system manufacturing and alignment system
03/28/2002WO2001097377A8 Very high repetition rate power supply system and method
03/28/2002WO2001080324A3 Transmission detection for vertical cavity surface emitting laser power monitor and system
03/28/2002US20020038074 Endoscope system having multiaxial-mode laser-light source or substantially producing multiaxial-mode laser light from single-axial-mode laser light
03/28/2002US20020037143 Optical communication device
03/28/2002US20020037138 Optical module and method for manufacturing same
03/28/2002US20020037025 Hybrid narrow -linewidth semiconductor lasers
03/28/2002US20020037024 Distributed feedback semiconductor laser
03/28/2002US20020037023 Multisegment integrated laser and a method for fabrication therof
03/28/2002US20020037022 Semiconductor light-emitting device with an improved ridge waveguide structure and method of forming the same
03/28/2002US20020037021 Semiconductor laser diode
03/28/2002US20020037020 WDM optical transmission apparatus
03/28/2002US20020036295 Optical device, surface emitting type device and method for manufacturing the same
03/28/2002US20020036293 Semiconductor laser device in which thicknesses of optical guide region and AlGaN cladding layers satisfy predetermined condition
03/28/2002US20020036286 Gallium nitride based II-V group compound semiconductor device
03/28/2002DE10042904A1 Semiconductor chip used in optical communications comprises a semiconductor laser element, and a beam former integrated in the chip for forming a laser beam emitted from the element
03/28/2002CA2422999A1 Electro-optic interconnect circuit board
03/27/2002EP1191651A1 Distributed feedback semiconductor laser
03/27/2002EP1191650A1 Light-emitting module
03/27/2002EP1190452A1 InGaAsN/GaAs QUANTUM WELL DEVICES
03/27/2002CN1341987A Surface transmitting equilateral triangle resonator laser
03/27/2002CN1341986A Frequency-stabilizing device of fiber-optical grating external cavity semiconductor laser and its frequency-stabilizing method
03/26/2002US6363188 Mode expander with co-directional grating
03/26/2002US6363097 Semiconductor laser with a rewritable wavelength stabilizer
03/26/2002US6363096 Article comprising a plastic laser
03/26/2002US6363095 Solid-state laser system using high-temperature semiconductor diode laser as an optical pump source
03/26/2002US6363093 Method and apparatus for a single-frequency laser
03/26/2002US6363092 Narrow spectral width high power distributed feedback semiconductor lasers
03/26/2002US6363088 All solid-state power broadband visible light source
03/26/2002US6363044 Automatically adapting forward or reversed biased photodiode detection circuit
03/26/2002US6362919 Laser system with multi-stripe diode chip and integrated beam combiner
03/26/2002US6362876 Laser beam power detecting device for planar type semiconductor laser diode
03/26/2002US6362515 GaN substrate including wide low-defect region for use in semiconductor element
03/26/2002US6362494 Semiconductor device and method and apparatus for manufacturing semiconductor device
03/26/2002US6362069 Long-wavelength VCSELs and method of manufacturing same
03/26/2002US6362016 Providing a layered structure of a substrate, a first cladding layer a light emitting layer, and a second cladding layer, where in one of layers is formed of a nitride group iii-v compound semiconductor
03/21/2002WO2002023686A1 Quantum cascade laser with optical phonon excitation
03/21/2002WO2002023685A1 Semiconductor laser device and method for manufacturing the same
03/21/2002WO2002023684A1 Current biased dual dbr grating semiconductor laser
03/21/2002WO2002023641A1 Oxide and air apertures and method of manufacture
03/21/2002WO2002023640A1 Nitride compound semiconductor light emitting device having a tunnel junction structure and fabrication method thereof
03/21/2002WO2002023595A2 A method for forming a semiconductor device, and a semiconductor device formed by the method
03/21/2002WO2002023242A2 Ring waveguide based optical device
03/21/2002WO2002001156A3 Ring laser gyroscope
03/21/2002WO2001066997A3 Lighting apparatus having quantum dot layer
03/21/2002WO2001047076A3 Wide ridge pump laser
03/21/2002US20020034861 Method of growing p-type ZnO based oxide semiconductor layer and method of manufacturing semiconductor light emitting device
03/21/2002US20020034351 Electro-optic interconnect circuit board
03/21/2002US20020034205 High-power coherent arrays of vertical cavity surface-emitting semiconducting lasers
03/21/2002US20020034204 Semiconductor laser device and method of manufacturing the same
03/21/2002US20020034203 Semiconductor laser device having lower threshold current
03/21/2002US20020034202 Method and device for selecting light source for optical communication
03/21/2002US20020034200 Method of monitoring light from a VCSEL
03/21/2002US20020033950 Gyro and method of operating the same with a modulated frequency signal
03/21/2002US20020033948 Gyro, driving method of gyro, and signal detecting method
03/21/2002US20020033938 Optical component plastic deformation control process
03/21/2002DE10042947A1 Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis Radiation-emitting semiconductor component based on GaN
03/20/2002EP1189317A1 Quantum cascade Laser with optical phonon excitation
03/20/2002EP1189292A1 Light-emitting semiconductor device and surface-emitting device
03/20/2002EP1189290A1 Semiconductor device having ZnO based oxide semiconductor layer and method of manufacturing the same
03/20/2002EP1189289A1 Nitride semiconductor device
03/20/2002EP1188208A1 Semiconductor laser with temperature independant performances
03/20/2002EP1188207A1 A semiconductor laser having a reflecting mirror which comprises a saturable bragg reflector
03/20/2002EP1188085A1 An optical transmitter-receiver module
03/20/2002CN1340891A Nitride semiconductor laser device
03/20/2002CN1340890A Semiconductor laser element and its manufacture method
03/20/2002CN1340864A Surface assembled luminescent diode and its manufacture method
03/19/2002US6360048 Waveguide optical semiconductor device, method of fabricating the same and optical device module
03/19/2002US6360040 Method for coupling of laser beams into waveguides
03/19/2002US6359921 Semiconductor laser element having resonator surface coated with oxygen gettering layer and high thermal conductivity layer
03/19/2002US6359920 Extended wavelength strained layer lasers having strain compensated layers
03/19/2002US6359919 Gallium nitride-based compound semiconductor laser and method of manufacturing the same
03/19/2002US6359918 Light source control device
03/19/2002US6359915 Wavelength-stabilized Bragg laser
03/19/2002US6359912 Multiple wavelength laser having a reduced number of wavelength controls
03/19/2002US6359724 Light generation method and light source
03/19/2002US6359330 Optoelectronic module and method for stabilizing its temperature
03/19/2002US6358764 Semiconductor light emitting device and method of producing same
03/19/2002US6358316 Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structure
03/14/2002WO2002021651A1 Laser system with external optical feedback and use of such system in the graphical industry
03/14/2002WO2002021650A2 A multisegment integrated laser and a method for fabrication thereof
03/14/2002WO2002021648A1 Transition metal-doped ii-vi heterostructure waveguide light emitter
03/14/2002WO2002021645A1 High-output pulse light source
03/14/2002WO2002021644A2 Method and device for producing stabilised ultrashort laser light pulses
03/14/2002WO2002021642A2 Infrared generation in semiconductor lasers
03/14/2002WO2002021605A1 The semiconductor led device and producing method
03/14/2002WO2002021604A1 Nitride semiconductor light-emitting device and optical device including the same
03/14/2002WO2002021578A1 Semiconductor laser element
03/14/2002WO2001093310A3 Semiconductor device with vertical electronic injection and method for making same
03/14/2002WO2001063709A3 Semiconductor component for the emission of electromagnetic radiation and method for production thereof
03/14/2002WO2001052373A3 Semiconductor laser structure
03/14/2002WO2001043165A3 Oxide films containing p-type dopant and process for preparing same