Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
---|
10/17/1990 | EP0392714A2 A semiconductor laser device |
10/16/1990 | US4964134 Semiconductor laser structures |
10/16/1990 | US4964010 Apparatus for limiting a time integration value of a pulsed current |
10/16/1990 | US4963933 LED illuminator bar for copier |
10/16/1990 | US4963508 Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice |
10/16/1990 | US4962985 Protective coatings for optical devices comprising Langmuir-Blodgett films |
10/10/1990 | EP0391248A2 Opto-electrical multiconnector |
10/10/1990 | CN1046077A Transient voltage suppression for electro-optic modules |
10/09/1990 | US4961616 Optical semiconductor device |
10/03/1990 | EP0390661A1 Process for the directed modulation of the composition or doping of semiconductors, notably for the manufacture of planar monolithic electronic components, use and corresponding products |
10/03/1990 | EP0390407A2 Reduction of intermodulation distortion in light emitting diodes |
10/03/1990 | EP0390262A1 Radiation-emitting semiconductor device and method of manufacturing such a semiconductor device |
10/03/1990 | EP0390209A2 Diamond light-emitting device |
10/03/1990 | EP0389824A1 Transient voltage suppression for electro-optic modules |
10/02/1990 | US4960730 Method of making a semiconductor light emitting device using out-diffusion from a buried stripe |
10/02/1990 | US4960721 Method for purifying group II-IV compound semiconductors |
10/02/1990 | CA1274899A1 Semiconductor device assembly and method of making same |
09/26/1990 | EP0388679A1 Method for aligning and fixing a lens and optical coupling arrangement fabricated therewith |
09/26/1990 | CN1045661A Corroded hole structure of ii-vi family film-substrate and its process |
09/25/1990 | US4959761 Surface mounted led package |
09/25/1990 | US4959694 Semiconductor heterostructures with SiGe material |
09/18/1990 | US4958355 High performance angled stripe superluminescent diode |
09/12/1990 | CN1009601B Epitaxial material of gallium phosphide with high luminescence efficiency |
09/11/1990 | US4956684 Printer head with light emitting element array |
09/11/1990 | US4956683 Isolation of p-n junctions |
09/07/1990 | WO1990010312A1 Semiconductor laser assembly |
09/07/1990 | WO1990007196A3 Blue light emitting diode formed in silicon carbide |
09/05/1990 | EP0385668A2 Diode laser |
09/04/1990 | US4955030 Method of manufacturing a semiconductor structure suitable for producing a multi-wavelength laser effect, and device obtained thereby |
09/04/1990 | US4954931 Linear diffuse light source |
09/04/1990 | US4954853 Optical semiconductor device |
08/30/1990 | DE3905657A1 Flexible supporting film |
08/29/1990 | EP0384849A2 A semiconductor light emitting system |
08/28/1990 | US4953170 Method for forming a heteroepitaxial structure, and a device manufactured thereby |
08/28/1990 | US4953006 Packaging method and package for edge-coupled optoelectronic device |
08/28/1990 | US4952820 Reduction of intermodulation distortion in light emitting diodes |
08/28/1990 | US4952811 Field induced gap infrared detector |
08/28/1990 | US4952028 Method for driving an optoelectronic switching device |
08/28/1990 | US4952019 Grating-coupled surface-emitting superluminescent device |
08/22/1990 | EP0383237A2 Recording/reproducing apparatus of optical card |
08/22/1990 | EP0383215A2 Epitaxial-growth structure for a semiconductor light-emitting device, and semiconductor light-emitting device using the same |
08/21/1990 | US4951124 Semiconductor device |
08/21/1990 | CA2010503A1 Semiconductor laser assembly |
08/21/1990 | CA1273091A2 Method for producing an optical device |
08/15/1990 | CN1009232B Double injection field effect transistors |
08/14/1990 | US4949352 Laser manufacture |
08/14/1990 | US4949156 Semiconductor string connection structure |
08/14/1990 | US4948960 Dual mode light emitting diode/detector diode for optical fiber transmission lines |
08/08/1990 | EP0381370A2 Improved packaging techniques for optical transmitters/receivers |
08/08/1990 | EP0380815A1 Integration of GaAs on Si substrate |
08/08/1990 | EP0185051B1 Semiconductor devices with buried heterostructure |
08/08/1990 | CN1044549A Blue light emitting diode formed in silicon carbide |
08/07/1990 | US4947400 Semiconductor apparatus |
08/07/1990 | US4946801 Gallium,aluminum,arsenic intermetallics |
08/07/1990 | US4946800 Doping with oxygen, nitrogen |
08/07/1990 | US4946553 Apparatus for interfacing an optical fiber to an optical source |
08/01/1990 | EP0380380A1 Method of producing a nearly plane semiconductor device capable of multi-wavelength laser emission, and device therefor |
08/01/1990 | EP0380322A2 Semi-conductor lasers |
08/01/1990 | EP0380106A2 Semiconductor emitting device and process for preparing the same |
07/31/1990 | US4945391 Semiconductor device housing with laser diode and light receiving element |
07/31/1990 | US4944811 Optical fibers |
07/25/1990 | EP0379359A2 A composite material |
07/25/1990 | EP0379325A2 Light emitting device |
07/25/1990 | EP0378919A2 High band-gap opto-electronic device and method for making same |
07/24/1990 | US4943971 Low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays |
07/18/1990 | EP0377940A2 Compound semiconductor material and semiconductor element using the same and method of manufacturing the semiconductor element |
07/18/1990 | EP0177617B1 Junction semiconductor light-emitting element |
07/17/1990 | US4942439 Gallium aluminum phosphide, multilayer, crystals, dopes |
07/17/1990 | US4942405 Light emitting diode print head assembly |
07/17/1990 | CA1271830A1 Opto-electronic device with anti-reflection coating |
07/12/1990 | WO1990007752A1 Non-impact printer with current mirror driver |
07/11/1990 | EP0377352A1 Flexible lighting tape with electroluminescent diodes |
07/10/1990 | US4941025 Quantum well semiconductor structures for infrared and submillimeter light sources |
07/10/1990 | US4941024 Semiconductor apparatus |
07/10/1990 | US4940898 Rhenium silicide |
07/10/1990 | US4940855 Hermetically tight glass-metal housing for semiconductor components and method for producing same |
07/10/1990 | CA1271550A1 Semiconductor light emitting device with vertical light emission |
07/05/1990 | DE3943232A1 LEDs for short wavelength visible and UV light - made from hetero-junction structures of silicon-carbide with compound semiconductor materials with similar lattice-constants |
06/28/1990 | WO1990007196A2 Blue light emitting diode formed in silicon carbide |
06/27/1990 | EP0375426A2 Semiconductor optical device |
06/27/1990 | EP0375356A2 Laser diode unit |
06/27/1990 | EP0375231A2 Silicon-based mounting structure for semiconductor optical devices |
06/26/1990 | US4937836 Semiconductor laser device and production method therefor |
06/26/1990 | US4937835 Semiconductor laser device and a method of producing same |
06/26/1990 | US4937660 Silicon-based mounting structure for semiconductor optical devices |
06/26/1990 | US4937654 Electronic part carrying strip and method of manufacturing the same |
06/26/1990 | US4937638 Edge emitting light emissive diode |
06/26/1990 | US4936808 Method of making an LED array head |
06/26/1990 | CA1270933A1 Bipolar inversion channel device |
06/26/1990 | CA1270932A1 Electro-optic device having a semiconductor, and method for emitting light |
06/21/1990 | DE3842394A1 Multilayer fluorescence device |
06/20/1990 | EP0374121A2 Light-emitting diode |
06/20/1990 | EP0373637A2 InP/GalnAsP double heterostructure laser diode with buried active layer, and method for its production |
06/19/1990 | US4935936 Semiconductor structure with flared mesa burying layers |
06/19/1990 | US4935856 Surface mounted LED package |
06/19/1990 | US4935665 Light emitting diode lamp |
06/15/1990 | CA2005555A1 Inp/gainasp double heterostructure laser diodes containing built-in closing p-n junctions on a double channeled substrate, with buried active layer and its production by means of the one-step liquid phase epitaxy |
06/14/1990 | WO1990006608A1 Method for producing semi-conductor lasers and lasers obtained by such method |
06/13/1990 | EP0372421A2 Light-emitting element made of a compound semiconductor |
06/13/1990 | EP0372394A1 Superluminescent diode |