Patents
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
04/2004
04/15/2004US20040069996 Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers
04/15/2004US20040069995 Feedback enhanced light emitting device
04/15/2004US20040069993 Light emitting device and manufacturing method thereof
04/15/2004US20040069992 Optoelectronic unit and transparent conductive substrate of the same
04/15/2004US20040069983 High-efficiency light emitting diode and method for manufacturing the same
04/15/2004DE20218718U1 Luminescent material for luminescence conversion LEDs comprises alkaline earth thiosilicate doped with europium
04/15/2004DE20218717U1 Luminescent material for luminescence conversion LEDs comprises alkaline earth sulfide doped with bismuth alone or in combination with sodium
04/15/2004DE10344568A1 Verfahren zum Herstellen einer Weißlichtquelle A method of manufacturing a white light source
04/15/2004DE10245632A1 Layered component with quantum well structure for yellow light emission, includes reflective layer which returns fraction of the light reflected from the exit structures, back to light exit structures, before it can return into active layer
04/15/2004DE10245631A1 Halbleiterbauelement und Verfahren zur Herstellung A semiconductor device and method for producing
04/15/2004DE10245628A1 Light-emitting semiconductor chip includes mirror layer with planar reflection surfaces inclined at acute angle with respect to main plane of beam production region
04/15/2004CA2499965A1 Large-area nanoenabled macroelectronic substrates and uses therefor
04/14/2004EP1408559A2 White light emitting device
04/14/2004EP1408476A1 Light emission display arrangements
04/14/2004EP1408475A1 Light emission display arrangements
04/14/2004EP1408087A1 Epoxy-polysiloxane resin compositions, solid state devices encapsulated therewith and method
04/14/2004EP1407496A1 Gallium nitride-based led and a production method therefor
04/14/2004CN2612075Y Package structure for LED
04/14/2004CN2611925Y Electrical switching real leather polarizing lens
04/14/2004CN1489225A Efficient luminous diode and its manufacturing method
04/14/2004CN1489224A High-brightness ultrathin light semiconductor device
04/14/2004CN1489223A Light-emitting diode structure
04/14/2004CN1489222A Light-emitting element
04/14/2004CN1489221A Built crystal layer growing method
04/14/2004CN1146060C Photoelectronic material, device using same and method for manufacturing same
04/13/2004US6720737 LED illumination structure
04/13/2004US6720730 High power led lamp
04/13/2004US6720664 Submount-holder for flip chip package
04/13/2004US6720586 Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same
04/13/2004US6720585 Distributed bragg reflector (dbr)
04/13/2004US6720584 Nitride type compound semiconductor light emitting element
04/13/2004US6720583 Optical device, surface emitting type device and method for manufacturing the same
04/13/2004US6720570 Gallium nitride-based semiconductor light emitting device
04/13/2004US6720090 Electroluminescent (el) devices
04/13/2004US6719884 Tuning a band-gap by intermixing an impurity with one quantum well in the at least two areas to different values; copper or a copper alloy impurity; high-speed diffusion; dopes
04/13/2004US6719394 Semiconductor device, ink tank provided with such semiconductor device, ink jet cartridge, ink jet recording apparatus, method for manufacturing such semiconductor device, and communication system, method for controlling pressure, memory element, security system of ink jet recording apparatus
04/08/2004WO2004030112A2 Optimized contact design for flip-chip led
04/08/2004WO2004030111A2 Narrow spectral width light emitting diode
04/08/2004WO2004030110A2 Superluminescent light emitting diode with low back facet reflection
04/08/2004WO2004030109A1 Luminescent material, especially for led application
04/08/2004WO2004030108A2 Radiation-emitting semiconductor component
04/08/2004WO2004030032A2 Type ii quantum well optoelectronic devices
04/08/2004WO2004029177A1 Luminescent material and light emitting diode using the same
04/08/2004WO2003100839A3 Method for epitaxial growth of a gallium nitride film separated from its substrate
04/08/2004WO2003054954A3 Electrical/optical integration scheme using direct copper bonding
04/08/2004WO2002082557B1 Thin film infrared transparent conductor
04/08/2004US20040068115 Charge transport compositions and electronic devices made with such compositions
04/08/2004US20040067366 Epoxy resin compositions, solid state devices encapsulated therewith and method
04/08/2004US20040066824 Lighting devices using feedback enhanced light emitting diode
04/08/2004US20040066816 Light emitting devices including tunnel junctions
04/08/2004US20040066808 Integrated arrays of modulators and lasers on electronics
04/08/2004US20040066154 Lighting circuit
04/08/2004US20040066140 LED device
04/08/2004US20040066135 Electronic devices made with electron transport and/or anti-quenching layers
04/08/2004US20040065894 Light emitting device using led
04/08/2004US20040065892 Methods and devices related to electrode pads for p-type group III nitride compound semiconductors
04/08/2004US20040065891 Semiconductor light emitting device
04/08/2004US20040065890 Narrow spectral width light emitting devices
04/08/2004US20040065889 Semiconductor wafer, semiconductor device, and methods for fabricating the same
04/08/2004US20040065887 Light emitting devices with layered III -V semiconductor structures, and modules and systems for computer, network and optical communication, using such devices
04/08/2004US20040065886 Microelectronic package having improved light extraction
04/08/2004DE19615179B4 Verfahren zur Herstellung lichtemittierender Halbleiterbauelemente mit verbesserter Stabilität A method for manufacturing light emitting semiconductor devices with improved stability
04/08/2004DE10340069A1 Surface mountable opto-electronic device e.g. LED for backlighting, has body with surface having recesses to mount device, where electrical contacts are provided on surface including portions formed on inner surface of recesses
04/08/2004DE10305021A1 Process for the surface mounting of illuminating diodes comprises preparing an electrically and thermally conducting substrate, forming grooves in the substrate, filling the grooves with an insulating layer, and further processing
04/08/2004DE10253911A1 Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung Radiation-emitting semiconductor device and process for its preparation
04/08/2004DE10253908A1 Radiation emitting semiconducting component has radiation generating active layer between 2 distributed Bragg reflectors forming optical resonator; active layer thickness exceeds resonator wavelength
04/08/2004DE10245945A1 Lichtquellenmodul sowie Verfahren zu dessen Herstellung Light source module and method for its production
04/08/2004DE10245933A1 Einrichtung zur Erzeugung eines gebündelten Lichtstroms Means for generating a bundled light flux
04/08/2004DE10245930A1 Optoelektronisches Bauelement und Bauelement-Modul Optoelectronic component and component module
04/08/2004DE10244986A1 Radiation-emitting semiconductor component used in the production of a luminescent diode chip comprises a semiconductor body, a structured contact layer, and intermediate chambers provided over the contact layer to form free surfaces
04/08/2004DE10244200A1 Strahlungsemittierendes Halbleiterbauelement Radiation-emitting semiconductor component
04/07/2004EP1406314A1 Semiconductor device
04/07/2004EP1406313A1 Iii group nitride based semiconductor luminescent element
04/07/2004EP1406311A1 Methods and apparatus for sensor alignment
04/07/2004EP1406042A1 Led indicator light
04/07/2004EP1405377A2 Led-module for illuminating devices
04/07/2004EP1405352A1 Substrate for an electroluminescent display device and method of manufacturing said substrate
04/07/2004EP1404902A1 High surface quality gan wafer and method of fabricating same
04/07/2004EP1258148B1 System and method employing led light sources for a projection display
04/07/2004CN2610497Y Photoelectronic device packaged by plastic
04/07/2004CN1487606A Nitride semiconductor illuminating elements
04/07/2004CN1487605A Illuminating apparatus
04/07/2004CN1487604A GaN-base multiple quantum well structure and LED of the structure
04/07/2004CN1487603A Multiple quantum well structure and LED of the structure
04/07/2004CN1145225C Chip type LED and its producing method
04/07/2004CN1145224C Method for making compound semiconductor layer activate to be p-type compound semiconductor layer
04/07/2004CN1145223C 电致发光装置 Electroluminescent devices
04/06/2004US6717820 Circuit board assembly
04/06/2004US6717711 Structure and method for forming a high efficiency electro-optics device
04/06/2004US6717362 Light emitting diode with gradient index layering
04/06/2004US6717355 Ca-al- si-o-n oxynitride activated with eu2+
04/06/2004US6717353 Sr-sion:eu2+
04/06/2004US6717349 Process for the preparation of pink light-emitting diode with high brightness
04/06/2004US6717256 Mounting structure for semiconductor device having entirely flat leads
04/06/2004US6717185 Light emitting devices with Group III nitride contact layer and superlattice
04/06/2004US6717184 Light-emitting element array having an element separating region
04/06/2004US6717183 Light-emitting thyristor matrix array and driver circuit
04/06/2004US6717182 Edge-emitting light-emitting device having improved external luminous efficiency and self-scanning light-emitting device array comprising the same
04/06/2004US6717167 Apparatus for manufacturing three-dimensional photonic crystal structure by fusion bonding the aligned lattice layers formed on wafers
04/06/2004US6716673 Two-pole SMT miniature housing for semiconductor components and method for the manufacture thereof