H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
11/2004
11/18/2004	CA2528216A1 Pin photodetector
11/18/2004	CA2526942A1 Light-emitting devices having an antireflective layer that has a graded index of refraction and methods of forming the same
11/18/2004	CA2523544A1 High powered light emitter packages with compact optics
11/18/2004	CA2497344A1 Light-emitting devices having an active region with electrical contacts coupled to opposing surfaces thereof and methods of forming the same
11/17/2004	EP1478032A2 Light emitting diode method for forming the same
11/17/2004	EP1478031A1 Light-emitting device of field-effect transistor type
11/17/2004	EP1476898A1 Method for production of a layer of silicon carbide or a nitride of a group iii element on a suitable substrate
11/17/2004	EP1013413B1 Electroconductive glass laminate
11/17/2004	CN2657205Y Flat-plate LED optical source
11/17/2004	CN2657204Y Circuit board with luminous diode
11/17/2004	CN2657203Y Luminous diode packaging device with rectification circuit
11/17/2004	CN2657031Y 数码相机模块 Digital Camera Module
11/17/2004	CN1547267A Light-emitting thyristor and self-scanning light-emitting device
11/17/2004	CN1547266A Method for generating source of white light in secondary laser mode and white light luminescence component
11/17/2004	CN1547265A Packaging structure of LED and packaging method thereof
11/17/2004	CN1547264A Zinc oxide homogeneous p-n junction material and method for making same
11/17/2004	CN1547238A Method for preparing CdSe quantum point
11/17/2004	CN1547056A Shooting type polarized luminotron and polarized light emitting array
11/17/2004	CN1176502C Manufacturing method of single-crystal GaN base and single-crystal GaN base
11/17/2004	CN1176501C Surface illuminating device
11/17/2004	CN1176500C Light-emitting device
11/16/2004	US6819845 Optical devices with engineered nonlinear nanocomposite materials
11/16/2004	US6819701 Super-luminescent folded cavity light emitting diode
11/16/2004	US6819695 Dopant diffusion barrier layer for use in III-V structures
11/16/2004	US6818926 Method for manufacturing gallium nitride compound semiconductor
11/16/2004	US6818925 Semiconductor substrates and structures
11/16/2004	US6818532 Method of etching substrates
11/16/2004	US6818531 Method for manufacturing vertical GaN light emitting diodes
11/16/2004	US6818467 P-type ohmic electrode in gallium nitride based optical device and fabrication method thereof
11/16/2004	US6818465 Nitride semiconductor element and production method for nitride semiconductor element
11/16/2004	US6818463 Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device
11/16/2004	US6818169 Molding device and molding method
11/16/2004	US6817735 Illumination light source
11/11/2004	WO2004098255A1 Electric circuit and electronic component
11/11/2004	WO2004097950A1 Light-emitting diode
11/11/2004	WO2004097949A1 White semiconductor light emitting device
11/11/2004	WO2004097948A1 Light-emitting device and light-emitting device manufacturing method
11/11/2004	WO2004097947A2 Light emitting diodes and the manufacture thereof
11/11/2004	WO2004097946A2 Light source
11/11/2004	WO2004097849A1 Electrode material and semiconductor device
11/11/2004	WO2004097516A2 Solid state light engine optical system
11/11/2004	WO2004084261A3 Illumination system comprising a radiation source and a fluorescent material
11/11/2004	WO2004075603A3 Organic electroluminescent device
11/11/2004	WO2004074556A3 β-Ga2O3 SINGLE CRYSTAL GROWING METHOD, THIN-FILM SINGLE CRYSTAL GROWING METHOD, Ga2O3 LIGHT-EMITTING DEVICE, AND ITS MANUFACTURING METHOD
11/11/2004	WO2004068603A3 Phosphor based light source component and method of making
11/11/2004	WO2004003971A3 Scanning light source system
11/11/2004	WO2003100833A3 Method of forming quantum dots for extended wavelength operation
11/11/2004	US20040224434 Method of forming a semiconductor structure for use in a light emitting diode and a semiconductor structure
11/11/2004	US20040223528 Semiconductor light emitting devices including embedded curent injection layers
11/11/2004	US20040223315 Light emitting apparatus and method of making same
11/11/2004	US20040222735 Integrated color LED chip
11/11/2004	US20040222524 Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and method for fabricating the same
11/11/2004	US20040222502 Heat conductivity and brightness enhancing structure for light-emitting diode
11/11/2004	US20040222499 Group lll nitride compound semiconductor device and method for forming an electrode
11/11/2004	US20040222439 Optical power monitoring for a semiconductor laser device
11/11/2004	US20040222435 Light emitting device with blue light LED and phosphor components
11/11/2004	US20040222434 Light-emitting semiconductor device using group III nitride compound
11/11/2004	US20040222433 Light emitting diodes packaged for high temperature operation
11/11/2004	US20040222431 III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier
11/11/2004	US20040222430 Temperature-sensing diode
11/11/2004	US20040222427 Light emitting diode module device
11/11/2004	US20040222426 Light emitting diode module structure
11/11/2004	US20040222411 Devices with optical gain in silicon
11/11/2004	DE202004011015U1 LED-Strahler mit trichterförmiger Linse LED spotlight with sliding lens
11/11/2004	DE10350707A1 Electrical contact for optoelectronic semiconductor chip, has mirror layer containing metal or metal alloy, protective layer, which reduces corrosion of mirror layer, barrier layer, adhesion medium layer and solder layer
11/11/2004	DE10211913A1 Illuminations-Leuchtenanordnung Illuminations Lighting arrangement
11/11/2004	DE10145492B4 Elektrolumineszente Lichtemissionseinrichtung, insbesondere als Weißlichtquelle The electroluminescent light emission device, in particular as a white light source
11/11/2004	CA2524438A1 Light emitting surface body structure
11/11/2004	CA2522616A1 Solid state light engine optical system
11/10/2004	EP1475846A2 Light emitting diode based light source with cooling liquid arrangement, and projection-type display apparatus
11/10/2004	EP1475845A1 Ohmic contacts using Ni-based solid solution for p-type GaN in LEDs
11/10/2004	EP1475835A2 Color mixing light emitting diode
11/10/2004	EP1474824A2 Group iii nitride semiconductor crystal, production method thereof and group iii nitride semiconductor epitaxial wafer
11/10/2004	EP1474633A2 Controlled lighting methods and apparatus
11/10/2004	CN2655429Y LED structure
11/10/2004	CN2655428Y Power LED
11/10/2004	CN2655427Y Organic LED with dehumidifying film
11/10/2004	CN2655175Y High-precise angle displacement measurer based on F-P plate sine phase modulation
11/10/2004	CN1545739A Semiconductor device using semiconductor chip
11/10/2004	CN1545738A 发光二极管灯 LED lamps
11/10/2004	CN1545737A Conductor frame and housing for a radiation-emitting component, radiation-emitting component and display and/or illumination system using radiation-emitting components
11/10/2004	CN1545730A Semiconductor device using semiconductor chip
11/10/2004	CN1545148A High power LED
11/10/2004	CN1545147A Power type light-emitting diode die element and illuminated light sources containing die
11/10/2004	CN1545146A Power type semiconductor solid illuminated light source and packaging preparation method thereof
11/10/2004	CN1545145A Method for thinning scribing of sapphire group nitride chip
11/10/2004	CN1544990A Imaging method as Dichronic imaging by four lens
11/10/2004	CN1175533C Semiconductor element and manufacture thereof
11/10/2004	CN1175500C Luminous element with roughed interface and its producing method
11/10/2004	CN1175497C Optical semiconductor device and optical semiconductor module assembled using same
11/10/2004	CN1175473C GaN signale crystalline substrate and method of producing the same
11/09/2004	US6815736 Isoelectronic co-doping
11/09/2004	US6815731 Light emitting semiconductor device with GaInNAs active layers and GaAs spacer layers
11/09/2004	US6815730 Nitride-based semiconductor light-emitting device
11/09/2004	US6815729 Electro-optical apparatus
11/09/2004	US6815728 Nitride semiconductor light-emitting device and optical device and light-emitting apparatus with the nitride semiconductor light-emitting device
11/09/2004	US6815727 Semiconductor light emitting device
11/09/2004	US6815726 Semiconductor device and semiconductor substrate, and method of fabricating the same
11/09/2004	US6815725 Semiconductor light emitting device having a fluorescent material emitting light of a secondary wavelength
11/09/2004	US6815724 Light emitting diode light source

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