Patents
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
01/2006
01/26/2006WO2006008411A1 Assembling two substrates by molecular adhesion
01/26/2006WO2006008080A1 Semiconductor element with an electric contact arranged on at least one surface
01/26/2006WO2005117124A3 Non-contact pumping light emitters non-radiative energy transfer
01/26/2006WO2005104252A3 Semiconductor light emitting devices including flexible film having therein an optical element, and methods of assembling same
01/26/2006WO2005048361A3 A method for producing a light-emitting device
01/26/2006WO2005017962A3 System and process for producing nanowire composites and electronic substrates therefrom
01/26/2006US20060019469 Deposition of nano-crystal silicon using a single wafer chamber
01/26/2006US20060018608 Optical semiconductor device, optical connector and electronic equipment
01/26/2006US20060018606 Surface mount module
01/26/2006US20060018353 Nitride-based semiconductor light-emitting device and method of fabricating the same
01/26/2006US20060018122 Reflective optical elements for semiconductor light emitting devices
01/26/2006US20060018120 Illuminator and production method
01/26/2006US20060017372 Lighting device and method for manufacturing the same
01/26/2006US20060017365 Mixed oxynitride of a bivalent, a trivalent element, and a tetravalent element and an activator; emission wavelength can be optionally set in a region with high visual sensitivity, excellent in luminance properties and high in emission efficiency
01/26/2006US20060017128 Solid-state imaging apparatus and manufacturing method thereof
01/26/2006US20060017073 Semiconductor device and method of fabricating the same
01/26/2006US20060017061 Nitride semiconductor light emitting device
01/26/2006US20060017060 Vertical conducting nitride diode using an electrically conductive substrate with a metal connection
01/26/2006US20060017059 Packaged OLED light source
01/26/2006US20060017058 Construction of LED circuit board
01/26/2006US20060017057 Device structure to improve OLED reliability
01/26/2006US20060017055 Method for manufacturing a display device with low temperature diamond coatings
01/26/2006US20060016960 Systems and methods for calibrating light output by light-emitting diodes
01/26/2006DE102005013894A1 Elektromagnetische Strahlung erzeugender Halbleiterchip und Verfahren zu dessen Herstellung Electromagnetic radiation-generating semiconductor chip and method of manufacture
01/26/2006DE102004031391A1 Gehäuse für ein elektronisches Bauteil Housing for an electronic component
01/26/2006CA2573149A1 Tunable photonic crystal
01/25/2006EP1619729A1 Gallium nitride based light-emitting device
01/25/2006EP1619693A1 Electrode material and semiconductor device
01/25/2006EP1619545A1 Backlight for display device
01/25/2006EP1618614A2 Light-emitting devices having an antireflective layer that has a graded index of refraction and methods of forming the same
01/25/2006EP1618613A1 Light-emitting devices having an active region with electrical contacts coupled to opposing surfaces thereof and methods of forming the same
01/25/2006EP1618430A2 Light source
01/25/2006CN2754213Y Base board for upside-down mounting LED chip
01/25/2006CN2754120Y Projector light source device
01/25/2006CN1726624A Methods of forming electronic devices including semiconductor mesa structures and conductivity junctions and related devices
01/25/2006CN1726603A Charge transport compositions and electronic devices made with such compositions
01/25/2006CN1725521A Optoelectronic device and manufacturing method
01/25/2006CN1725518A Packing base for large power semiconductor LED
01/25/2006CN1725517A White light luminous device
01/25/2006CN1725445A Epitaxial growing technology of III class nitride semiconductor on silicon substrate
01/25/2006CN1725438A Preparation method of silicon and silicon germanium quantum point array
01/25/2006CN1725436A Method for manufacturing semiconductor nano structure on cleavage surface
01/25/2006CN1724261A Solid semiconductor element, ink tank with the element, and their using method
01/25/2006CN1238909C Manufacturing method of light emitting diode bulb and its structure
01/25/2006CN1238908C LED element with opposite electrodes and its making process
01/24/2006US6990156 Frequency offset estimation for communication systems method and device for inter symbol interference
01/24/2006US6989598 Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and method for fabricating the same
01/24/2006US6989555 Strain-controlled III-nitride light emitting device
01/24/2006US6989554 Carrier plate for opto-electronic elements having a photodiode with a thickness that absorbs a portion of incident light
01/24/2006US6989412 Epoxy molding compounds containing phosphor and process for preparing such compositions
01/24/2006US6989287 Method for producing nitride semiconductor, semiconductor wafer and semiconductor device
01/24/2006US6989280 Organic light-emitting diode devices having reduced ambient-light reflection and method of making the same
01/24/2006US6989202 comprises sapphire single crystal substrate and contoured/flat underfilm; usable for semiconductor films constituting light-emitting diode or high velocity integrated circuit chip
01/24/2006US6988899 Electronic assembly, and apparatus and method for the assembly thereof
01/19/2006WO2006007301A1 Phosphor based illumination system having a long pass reflector and method of making same
01/19/2006WO2006007032A1 Ii-vi/iii-v layered construction on inp substrate
01/19/2006WO2006006822A1 Flip-chip light emitting diodes and method of manufacturing thereof
01/19/2006WO2006006804A1 Nitride semiconductor light-emitting device and fabrication method thereof
01/19/2006WO2006006582A1 Fluorescent substance and light bulb color light emitting diode lamp using the fluorescent substance and emitting light bulb color light
01/19/2006WO2006006556A1 Semiconductor light emitting element
01/19/2006WO2006006555A1 Semiconductor light-emitting device
01/19/2006WO2006006544A1 Light-emitting device
01/19/2006WO2006006474A1 Exposure system
01/19/2006WO2006006473A1 Phosphorescent light bulb
01/19/2006WO2006006255A1 Semiconductor light emitting device
01/19/2006WO2006006002A1 Wave length shifting compositions for white emitting diode systems
01/19/2006WO2006005393A2 White led spotlight having a funnel-shaped lens and planar facets
01/19/2006WO2005112135A3 White light emitting diode
01/19/2006WO2005022639A3 Gallium nitride material devices and methods of forming the same
01/19/2006US20060014429 Housing for an electronic component
01/19/2006US20060014365 Method for fabricating a semiconductor element from a dispersion of semiconductor particles
01/19/2006US20060014310 Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal
01/19/2006US20060012989 Light emitting diode and backlight module having light emitting diode
01/19/2006US20060012888 Lens-attached light-emitting element
01/19/2006US20060012299 Light emitting device
01/19/2006US20060012298 LED chip capping construction
01/19/2006US20060012294 Electroluminescent devices and displays with integrally fabricated address and logic devices fabricated by printing or weaving
01/19/2006US20060012287 Efficient, green-emitting phosphors, and combinations with red-emitting phosphors
01/19/2006US20060012284 Strontium silicate-based phosphor and method thereof
01/19/2006US20060012053 Flip-chip packaged SMD-type LED with antistatic function and having no wire bonding
01/19/2006US20060012015 Two-pole SMT miniature housing for semiconductor components and method for the manufacture thereof
01/19/2006US20060011937 Strain-controlled III-nitride light emitting device
01/19/2006US20060011936 Fluorescent substance containing nitrogen, method for manufacturing the same, and light-emitting device
01/19/2006US20060011935 Light extraction from a semiconductor light emitting device via chip shaping
01/19/2006US20060011934 Semiconductor light-emitting element and manufacturing method thereof
01/19/2006US20060011933 Optoelectronic device manufacturing
01/19/2006US20060011931 Ic package with an integrated power source
01/19/2006US20060011928 Surface-mountable light-emitting diode and/or photodiode and method for the production thereof
01/19/2006US20060011926 Light-emitting diode device with resecurable connection
01/19/2006US20060011925 Radiation-emitting semiconductor element and method for producing the same
01/19/2006US20060011923 Electromagnetic radiation generating semiconductor chip and method for making same
01/19/2006US20060011922 Light-emitting device comprising an eu(II)-activated phosphor
01/19/2006DE19921684B4 Beleuchtungselement mit Halbleiterchips Lighting element with semiconductor chips
01/19/2006DE102005029268A1 Light emitting device for use in e.g. optical display devices comprises second nitride semiconductor stack including hexagonal pyramid cavities filled with transparent conductive oxide layer
01/19/2006DE102005029267A1 Leuchtdiode mit Kleberschicht sowie zugehöriges Herstellverfahren LED with adhesive layer and associated manufacturing processes
01/19/2006DE102005021700A1 Protective casing for electrical or electronic components, especially light-emitting diodes, comprises a pressure-stable, translucent, sterilizable plastic
01/19/2006DE102004045947A1 Leuchtdiodenanordnung LED arrangement
01/19/2006DE102004044179A1 Verfahren zur Montage von Halbleiterchips Process for mounting semiconductor chips
01/19/2006DE102004031732A1 Strahlungsemittierender Halbleiterchip mit einem Strahlformungselement und Strahlformungselement Radiation-emitting semiconductor chip having a beam-shaping element and the beam shaping element
01/19/2006DE102004030628A1 Organisches elektronisches Element mit elektrisch leitfähiger semitransparenter Schicht The organic electronic element with electrically conductive semi-transparent layer