| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 06/29/2006 | WO2006066962A2 Selective oxidation and selective etching of allnn layers for manufacturing group iii nitride semiconductor devices |
| 06/29/2006 | WO2006035852A3 A group iii-v compound semiconductor and a method for producing the same |
| 06/29/2006 | US20060141648 Light emitting device methods |
| 06/29/2006 | US20060141644 Light emitting diode and fabricating method thereof |
| 06/29/2006 | US20060140239 Silicon rich nitride CMOS-compatible light sources and Si-based laser structures |
| 06/29/2006 | US20060139955 Backlight system and liquid crystal display using the same |
| 06/29/2006 | US20060139954 Display system and lighting device used therein |
| 06/29/2006 | US20060139946 Ring-shaped light emitting unit |
| 06/29/2006 | US20060139926 Light-emitting device, and illumination apparatus and display apparatus using the light-emitting device |
| 06/29/2006 | US20060139920 Jacketed LED assemblies and light strings containing same |
| 06/29/2006 | US20060139575 Optical collection and distribution system and method |
| 06/29/2006 | US20060139299 Surface light source control device |
| 06/29/2006 | US20060139267 Light-emitting element driving apparatus |
| 06/29/2006 | US20060138951 Light source with LED and optical protrusions |
| 06/29/2006 | US20060138945 Electroluminescent devices and methods of making electroluminescent devices including an optical spacer |
| 06/29/2006 | US20060138937 High efficacy white LED |
| 06/29/2006 | US20060138683 Fabrication method of light emitting diodes |
| 06/29/2006 | US20060138652 Solder for device package |
| 06/29/2006 | US20060138645 High power light emitting diode device |
| 06/29/2006 | US20060138621 Optoelectronic component and a module based thereon |
| 06/29/2006 | US20060138449 Gallium nitride based light-emitting device |
| 06/29/2006 | US20060138448 Compound semiconductor and compound semiconductor device using the same |
| 06/29/2006 | US20060138446 Algainn based optical device and fabrication method thereof |
| 06/29/2006 | US20060138445 Gan-based and ZnO-based LED |
| 06/29/2006 | US20060138444 Flip-chip bonding structure of light-emitting element using metal column |
| 06/29/2006 | US20060138443 Encapsulation and packaging of ultraviolet and deep-ultraviolet light emitting diodes |
| 06/29/2006 | US20060138442 Diode housing |
| 06/29/2006 | US20060138441 Light source module and method for production thereof |
| 06/29/2006 | US20060138440 Light-emitting diode lamp and light-emitting diode display device |
| 06/29/2006 | US20060138439 High radiance LED chip and a method for producing same |
| 06/29/2006 | US20060138437 Lens and LED using the lens to achieve homogeneous illumination |
| 06/29/2006 | US20060138436 Light emitting diode package and process of making the same |
| 06/29/2006 | US20060138435 Multiple component solid state white light |
| 06/29/2006 | US20060138434 Semiconductor optical devices |
| 06/29/2006 | US20060138433 Optical combiner/decombiner with reduced insertion loss |
| 06/29/2006 | US20060138432 Semiconductor light emitting device and method of manufacturing the same |
| 06/29/2006 | US20060138431 Light emitting device structure having nitride bulk single crystal layer |
| 06/29/2006 | US20060138388 Phosphor for light sources and associated light source |
| 06/29/2006 | DE202006004683U1 Light emitting diode for headlight or for other lighting purpose has dome shaped optical working head whereby head consists of at least two dividing head formed symmetrical to packing axis and shape of head can be different from each other |
| 06/29/2006 | DE102005057756A1 Beschleunigungskreis, welcher die Einschalt/- Ausschaltgeschwindigkeit einer LED erhöhen kann Acceleration circuit that the switch / - may increase turn-off of an LED |
| 06/29/2006 | DE102005051063A1 Silicate group fluorescent material for LED lamp, is produced using specific fluorescent crystal, and exhibits high luminance by irradiation with ultraviolet or blue light, by removing water in wet preparation process during manufacture |
| 06/29/2006 | DE102005045106A1 Flash module for e.g. camera, has wavelength-converting overlay disposed on the LED chip, the overlay comprising quantum dots dispersed in a matrix material |
| 06/29/2006 | DE102004059412A1 Optoelectronic component e.g. polarizer, has polymer layer, which is transparent in specific infrared spectral range, on surface, where layer has thickness from ten nanometer to maximum of two hundred and fifty micrometer |
| 06/29/2006 | CA2592096A1 Light emitting device |
| 06/28/2006 | EP1675440A2 Illumination apparatus and image display apparatus |
| 06/28/2006 | EP1675189A2 Method of manufacturing semiconductor chip |
| 06/28/2006 | EP1675097A2 Backlight device, method of driving backlight and liquid crystal display apparatus |
| 06/28/2006 | EP1674787A2 Illuminating device comprising LEDs |
| 06/28/2006 | EP1673816A1 Semiconductor device for emitting light and method for fabricating the same |
| 06/28/2006 | EP1673815A1 Group-iii nitride semiconductor device |
| 06/28/2006 | EP1363916A4 Emissive multichromophoric systems |
| 06/28/2006 | CN1795567A Light-emitting device |
| 06/28/2006 | CN1795566A Light emitting device |
| 06/28/2006 | CN1795554A Lead frame for a semiconductor device |
| 06/28/2006 | CN1795252A Light-emitting device and phosphor |
| 06/28/2006 | CN1794891A Illumination apparatus and image display apparatus |
| 06/28/2006 | CN1794478A Conductive and insulating quasi gallium nitride base growing substrate |
| 06/28/2006 | CN1794477A Ohm electrode containing gold germanium nickel, indium gallium aluminum nitrogen semiconductor luminous element and its manufacturing method |
| 06/28/2006 | CN1794476A Indium gallium aluminium nitrogen semi-conductor luminous element containing metallic chromium substrate and its manufacturing method |
| 06/28/2006 | CN1794425A Improve lateral epitaxial method |
| 06/28/2006 | CN1794063A Direct type back light module |
| 06/28/2006 | CN1794060A Backlight system and liquid crystal display using the same |
| 06/28/2006 | CN1794059A Backlight system and liquid crystal display employing the same |
| 06/28/2006 | CN1262053C Semiconductor laser comprising a plurality of optically active regions |
| 06/28/2006 | CN1262024C Gallium nitride-based III-V group compound semiconductor manufacturing method |
| 06/28/2006 | CN1262023C Luminescent device |
| 06/28/2006 | CN1262022C Light-emitting thyristor and self-scanning light-emitting device |
| 06/28/2006 | CN1262021C Nitrided gallium III-V group compound semiconductor device and its mfg.method |
| 06/28/2006 | CN1261987C Method for reducing rough point of conductive film surface |
| 06/28/2006 | CN1261978C Semiconductor structure |
| 06/27/2006 | US7067976 uses plastic film in vacuum sealing an OLED; by sandwiching the organic film between the inorganic films, stress can be relaxed, and even if one of the inorganic films has a crack, the other inorganic films can prevent oxygen or water from penetrating the OLED; relaxed stress results in reduced cracking |
| 06/27/2006 | US7067974 Light-emitting apparatus and method for forming the same |
| 06/27/2006 | US7067893 Optoelectronic element with a non-protruding lens |
| 06/27/2006 | US7067867 Large-area nonenabled macroelectronic substrates and uses therefor |
| 06/27/2006 | US7067856 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| 06/27/2006 | US7067850 Stacked switchable element and diode combination |
| 06/27/2006 | US7067849 Diode having high brightness and method thereof |
| 06/27/2006 | US7067848 High intensity LED |
| 06/27/2006 | US7067847 Semiconductor element |
| 06/27/2006 | US7067846 Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system |
| 06/27/2006 | US7067838 Gallium-nitride-based light-emitting apparatus |
| 06/27/2006 | US7067458 support substrate on which crystals cannot be epitaxially grown, e.g., fused quartz; anisotropic electrode layer e.g., Bi2Sr2CaCu2O8; and a dielectric layer formed by epitaxially growing a dielectric material containing a bismuth layer structured compound on the electrode layer, e.g., SrBi4Ti4O15 |
| 06/27/2006 | US7067339 Selective growth method, and semiconductor light emitting device and fabrication method thereof |
| 06/27/2006 | US7067072 Nanophase luminescence particulate material |
| 06/27/2006 | US7067070 Electroluminescent phosphor powders, methods for making phosphor powders, and devices incorporating same |
| 06/27/2006 | US7066628 Jacketed LED assemblies and light strings containing same |
| 06/27/2006 | US7066626 LED lamp |
| 06/27/2006 | US7066623 Method and apparatus for producing untainted white light using off-white light emitting diodes |
| 06/22/2006 | WO2006065558A2 Semiconductor light emitting device mounting substrates and packages including cavities and cover plates, and methods of packaging same |
| 06/22/2006 | WO2006065046A1 Thin gallium nitride light emitting diode device |
| 06/22/2006 | WO2006065015A1 Package for light emitting device |
| 06/22/2006 | WO2006065010A1 METHOD FOR MANUFACTURING G a N-BASED LIGHT EMITTING DIODE USING LASER LIFT-OFF TECHNIQUE AND LIGHT EMITTING DIODE MANUFACTURED THEREBY |
| 06/22/2006 | WO2006065007A1 Leadframe having a heat sink supporting ring, fabricating method of a light emitting diodepackage using the same and light emitting diodepackage fabbricated by the method |
| 06/22/2006 | WO2006064997A1 Extensive area led having roughness surface |
| 06/22/2006 | WO2006064996A1 Package for light emitting device and method for packaging the same |
| 06/22/2006 | WO2006064930A1 Photo-conversion structure and light-emitting device using same |
| 06/22/2006 | WO2006064841A1 Semiconductor circuit for driving light emitting diode, and light emitting diode driving apparatus |
| 06/22/2006 | WO2006046177A3 Semiconductor device with tunable energy band gap |
| 06/22/2006 | WO2006045287A3 Semiconductor component emitting electromagnetic radiation and component housing |
| 06/22/2006 | WO2006035388A3 Phosphor-converted led with luminance enhancement through light recycling |