Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
---|
10/29/2009 | US20090267072 Electro-optical device and method for manufacturing the same |
10/29/2009 | US20090267071 Pixel layout structure for raising capability of detecting amorphous silicon residue defects and method for manufacturing the same |
10/29/2009 | US20090267065 Semiconductor light emitting element and method for manufacturing the same |
10/29/2009 | US20090267063 Semiconductor light-emitting device and method of manufacturing the same |
10/29/2009 | US20090267062 Zinc oxide Based Compound Semiconductor Device |
10/29/2009 | US20090267053 Carbon-nanotube based opto-electric device |
10/29/2009 | US20090267051 Method of preparing quantum dot-inorganic matrix composites |
10/29/2009 | US20090267050 Method of preparing cadmium sulfide nanocrystals emitting light at multiple wavelengths, and cadmium sulfide nanocrystals prepared by the method |
10/29/2009 | US20090267049 Plasmon Enhanced Nanowire Light Emitting Diode |
10/29/2009 | US20090267048 Semiconductor light emitting element |
10/29/2009 | DE102008044641A1 Optoelektronisches Bauelement Optoelectronic component |
10/29/2009 | DE102008024704A1 Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils The optoelectronic device and method for producing an optoelectronic component |
10/29/2009 | DE102008020882A1 Light emitting device, has inhomogeneous light source and wavelength converting element positioned in relation to each other such that pre-defined optical characteristics of light is achieved by device |
10/29/2009 | DE102008020321A1 Nano-LED and laser manufacturing method, involves laterally structuring and deeply etching substrate so that substrate produces pillars as base for adjacent epitaxy by application of semiconductor nano-pillar on substrate |
10/28/2009 | EP2112729A2 Method of making nitride semiconductor laser, method of making epitaxial wafer, and nitride semiconductor laser |
10/28/2009 | EP2112700A2 Light-emitting diode package and light-emitting device |
10/28/2009 | EP2112699A2 Nitride-based semiconductor product and method for its production |
10/28/2009 | EP2112698A1 Side view light emitting diode package |
10/28/2009 | EP2112697A1 Light emitting device, package, light emitting device manufacturing method, package manufacturing method and package manufacturing die |
10/28/2009 | EP2111651A1 Led devices having lenses and methods of making same |
10/28/2009 | EP2111650A1 Semi-conductor chip and method for producing a semi-conductor chip |
10/28/2009 | EP2111649A2 Wafer level phosphor coating method and devices fabricated ultilizing method |
10/28/2009 | EP2111648A2 Wafer level phosphor coating method and devices fabricated utilizing method |
10/28/2009 | EP2111641A2 Illumination devices using externally interconnected arrays of light emitting devices, and methods of fabricating same |
10/28/2009 | EP2111640A2 Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters |
10/28/2009 | EP2111634A1 Al(x)ga(1-x)n-cladding-free nonpolar iii-nitride based laser diodes and light emitting diodes |
10/28/2009 | CN201335319Y Optical lens and light-emitting diode illuminating apparatus thereof |
10/28/2009 | CN101569025A Light Emitting diode driving apparatus |
10/28/2009 | CN101569024A Semiconductor light emitting element and method for manufacturing semiconductor light emitting device |
10/28/2009 | CN101569023A Housing for an optoelectronic component and arrangement of an optoelectronic component in a housing |
10/28/2009 | CN101569022A Light emitting device and method of manufacturing the same |
10/28/2009 | CN101569021A Multi-grain luminescent ceramics for light emitting devices |
10/28/2009 | CN101569020A Light-emitting apparatus with shaped wavelength converter |
10/28/2009 | CN101569019A Illumination device, particularly with luminescent ceramics |
10/28/2009 | CN101567521A Method for growing controllable quantum dots and quantum rings |
10/28/2009 | CN101567417A Nitride-based semiconductor device and method of manufacturing the same |
10/28/2009 | CN101567416A Lead wire stand for producing semiconductor light-emitting diode |
10/28/2009 | CN101567415A Manufacturing method for light-emitting diode chip substrate structure |
10/28/2009 | CN101567414A Light-emitting diode chip and manufacturing method thereof |
10/28/2009 | CN101567413A Light-emitting diode |
10/28/2009 | CN101567412A Encapsulating method of blue-light LED chip |
10/28/2009 | CN101567411A Flip-chip integrated encapsulation structure of LED and method thereof |
10/28/2009 | CN101567410A Method for encapsulating LED chip |
10/28/2009 | CN101567409A Light-emitting diode and fabricating method thereof |
10/28/2009 | CN101567379A Semi-conductor luminescent diode with high output efficiency |
10/28/2009 | CN101567323A Method for producing three-color light-emitting diode for display screen |
10/28/2009 | CN101566307A Non-imaging optical directional light distribution method for LED light source |
10/28/2009 | CN101566285A Large power yellow light emitting diode lamp |
10/28/2009 | CN101565620A Single-phase white-emitting phosphor based on near ultraviolet excitation and preparation method thereof |
10/28/2009 | CN101565612A Method for preparing nitride red fluorescent powder for white light LED |
10/28/2009 | CN101565302A Ceramic packaging material for LED and production method thereof |
10/28/2009 | CN101564794A Ultraviolet laser device for cutting copper substrate for high-power LED chip |
10/28/2009 | CN100556067C Semiconductor apparatus and optical printing head and image forming device |
10/28/2009 | CN100555694C Package method for alleviating silic gel for large power LED |
10/28/2009 | CN100555693C Controllable asymmetric doping potential barrier nano silicon based luminous device and method for producing the same |
10/28/2009 | CN100555692C Method for improving luminous efficiency of oxygen-doped silicon base nitride thin-film electroluminescent device |
10/28/2009 | CN100555691C Packaging structure for improving luminous efficiency of power LED |
10/28/2009 | CN100555690C GaN base spinning LED and preparation method thereof |
10/28/2009 | CN100555689C Method of manufacturing nitride semiconductor light-emitting element and nitride semiconductor light-emitting element |
10/28/2009 | CN100555688C Surface mounting light emitting diode device |
10/28/2009 | CN100555687C Semiconductor light-emitting device and method for manufacturing same |
10/28/2009 | CN100555686C Semiconductor light-emitting device and its production method |
10/28/2009 | CN100555685C Color temperature control method for LED white power tube |
10/28/2009 | CN100555684C Gallium nitride based LED device for illumination |
10/28/2009 | CN100555683C Nitride semiconductor device |
10/28/2009 | CN100555682C Nitride semiconductor light emitting device and fabrication method thereof |
10/28/2009 | CN100555681C Led light source with lens |
10/28/2009 | CN100555069C Light source apparatus and projector |
10/28/2009 | CN100555003C Optical lens, optical package having the same, backlight assembly having the same and display device having the same |
10/28/2009 | CN100554373C Single component white light fluorescent powder for LED lamp and its preparation method |
10/27/2009 | US7609208 Electrodes on a photoconductive substrate for generation and detection of terahertz radiation |
10/27/2009 | US7608994 White light emitting device |
10/27/2009 | US7608862 Light emitting device and a lighting apparatus |
10/27/2009 | US7608861 Active matrix type display having two transistors of opposite conductivity acting as a single switch for the driving transistor of a display element |
10/27/2009 | US7608860 Light emitting devices suitable for flip-chip bonding |
10/27/2009 | US7608859 Semiconductor light-emitting device with transparent conductive film |
10/27/2009 | US7608853 Semiconductor light emitting diode that uses silicon nano dot and method of manufacturing the same |
10/27/2009 | US7608852 Luminous device and method of manufacturing the same |
10/27/2009 | US7608811 Minimal depth light filtering image sensor |
10/27/2009 | US7608525 Method for manufacturing nitride semiconductor substrate |
10/27/2009 | US7608472 Light emitting element and method of making same |
10/27/2009 | US7608200 Phosphor and including the same, light emitting apparatus, illuminating apparatus and image display |
10/27/2009 | US7607801 Light emitting apparatus |
10/25/2009 | CA2663779A1 Freestanding iii-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate |
10/22/2009 | WO2009129353A1 Metallized silicon substrate for indium gallium nitride light-emitting diode |
10/22/2009 | WO2009128669A2 Light-emitting device and fabricating method thereof |
10/22/2009 | WO2009128646A2 Semiconductor substrate and method for manufacturing the same |
10/22/2009 | WO2009128622A2 Light-emitting device using clad layer consisting of asymmetrical units |
10/22/2009 | WO2009128468A1 White light-emitting device, backlight, liquid crystal display device and illuminating device |
10/22/2009 | WO2009128354A1 Light-emitting diode package |
10/22/2009 | WO2009127326A2 Led module having a platform with a central recession |
10/22/2009 | WO2009096685A3 Led package, and a production method therefor, and a device using the led package |
10/22/2009 | WO2009093846A3 Method for manufacturing light emitting device |
10/22/2009 | WO2009093845A3 Light emitting device |
10/22/2009 | WO2009091153A3 Iii-nitride semiconductor light emitting device and method for manufacturing the same |
10/22/2009 | US20090263955 GaN single crystal substrate and method of making the same |
10/22/2009 | US20090263925 Nitride-based light-emitting device and method of manufacturing the same |
10/22/2009 | US20090263923 Semiconductor device using buried oxide layer as optical wave guides |
10/22/2009 | US20090263922 Reflective Positive Electrode And Gallium Nitride-Based Compound Semiconductor Light-Emitting Device Using The Same |
10/22/2009 | US20090263143 Optical communication integration |