Patents
Patents for H01L 31 - Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (138,256)
02/2007
02/06/2007US7173250 Drift-type detector with limited noise level
02/06/2007US7173232 Light detection device and mounting method thereof
02/06/2007US7173231 Chip scale package structure for an image sensor
02/06/2007US7173180 Coating a silica semiconductive layer with a starting mixture comprising a polysilane or silane compound, silicon particles, and doping; heating and/or light in containing oxygen and/or ozone, or oxygen-free; silicon hydride-free; safe, easy to handle
02/06/2007US7173179 Solar co-generator
02/06/2007US7172960 Multi-layer film stack for extinction of substrate reflections during patterning
02/06/2007US7172932 Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus
02/06/2007US7172921 Method and structure for forming an integrated spatial light modulator
02/06/2007US7172910 Web fabrication of devices
02/06/2007US7172654 Preparation of compounds based on phase equilibria of Cu-In-Se
02/06/2007US7172348 Optical sub-assembly having an enhanced discharge-resistant arrangement and an optical transceiver using the same
02/01/2007WO2007013806A1 Method for passivating a substrate surface
02/01/2007WO2007013625A1 Solar cell module
02/01/2007WO2007013534A1 Semiconductor device
02/01/2007WO2007013389A1 Power generating apparatus
02/01/2007WO2007013262A1 Terminal box for solar cell module
02/01/2007WO2007013128A1 Semiconductor chip module
02/01/2007WO2007012992A1 A package and manufacturing method for a microelectronic component
02/01/2007WO2007012216A2 Oriented zeolite material and method for producing the same
02/01/2007WO2006133163A3 Internal gettering by metal alloy clusters
02/01/2007WO2005123754A3 Transition-metal charge-transport materials, methods of fabrication thereof, and methods of use thereof
02/01/2007WO2005065326A3 Optically controlled electrical switching device based on wide bandgap semiconductors
02/01/2007WO2004109764A3 Method of fabricating vertical structure compound semiconductor devices
02/01/2007US20070026590 Dynamic Schottky barrier MOSFET device and method of manufacture
02/01/2007US20070026571 Roll-to-roll fabricated encapsulated semiconductor circuit devices
02/01/2007US20070026570 Roll-to-roll fabricated electronically active device
02/01/2007US20070026552 Compound semiconductor device and its manufacture
02/01/2007US20070026240 chemical vapor deposition of tin oxide; hydrogen chloride serves to prevent the oxidation reaction from occurring between tin tetrachloride and water vapor; crystallization in multi-steps
02/01/2007US20070024154 Solid state energy converter
02/01/2007US20070023854 CMOS image sensors including pickup regions and methods of fabricating the same
02/01/2007US20070023853 Megavoltage imaging with a photoconductor based sensor
02/01/2007US20070023852 Solid-state image sensing device producing method and solid-state image sensing device
02/01/2007US20070023850 Bonding surfaces together via plasma treatment on both surfaces with wet treatment on only one surface
02/01/2007US20070023831 Field Effect Transistor and Application Device Thereof
02/01/2007US20070023811 Vertical p-n junction device and method of forming same
02/01/2007US20070023804 Double pinned photodiode for CMOS APS and method of formation
02/01/2007US20070023803 CMOS image sensor and method of fabricating the same
02/01/2007US20070023802 CMOS image sensor and method of fabricating the same
02/01/2007US20070023801 Stacked pixel for high resolution CMOS image sensor
02/01/2007US20070023800 Semiconductor imaging device and fabrication process thereof
02/01/2007US20070023799 Structure and method for building a light tunnel for use with imaging devices
02/01/2007US20070023798 Dual conversion gain gate and capacitor combination
02/01/2007US20070023797 Complementary metal oxide semiconductor image sensor layout structure
02/01/2007US20070023796 Pinning layer for pixel sensor cell and method thereof
02/01/2007US20070023783 Semiconductor device
02/01/2007US20070023782 Semiconductor device
02/01/2007US20070023781 Semiconductor rectifier
02/01/2007US20070023780 Semiconductor device and method of manufacturing the same
02/01/2007US20070023778 Integrated circuit with multi-length power transistor segments
02/01/2007US20070023770 Optical semiconductor device and method for manufacturing the same
02/01/2007US20070023761 Silicon carbon germanium (SiCGe) substrate for a group III nitride-based device
02/01/2007US20070023745 Strained channel transistor and method of fabricating the same
02/01/2007US20070023614 Cmos image sensor having dark current compensation function
02/01/2007US20070023082 Compositionally-graded back contact photovoltaic devices and methods of fabricating such devices
02/01/2007US20070023081 Compositionally-graded photovoltaic device and fabrication method, and related articles
02/01/2007US20070022947 Process for preparing p-n junctions having a p-type ZnO film
02/01/2007DE202006016227U1 Autonomous energy station has energy production collection and storage modules in a pyramidal outer case with a multi-cornered base and is transportable
02/01/2007DE112005000528T5 Belüfteter Photovoltaikmodulrahmen Ventilated photovoltaic module frame
02/01/2007DE10248927B4 Dünnschichtsolarzelle mit elektrischer Molybdän-Kontaktschicht und Herstellungsverfahren Thin film solar cell with electric molybdenum-contact layer and manufacturing method
02/01/2007DE102006032459A1 CMOS-Bildsensor und zugehöriges Herstellungs-Verfahren CMOS image sensor and associated manufacturing process
02/01/2007DE102005036130A1 Verfahren und Vorrichtung zum Herstellen eines Solarzellenstring Method and apparatus for manufacturing a solar cell string
02/01/2007DE102005032593A1 Optical module, has optical (glass) fiber and light-emitting light-receiving component
01/2007
01/31/2007EP1748495A1 Method and apparatus for forming a solar cell string by inductive soldering
01/31/2007EP1748494A1 Wavelength-sensitive detector with elongate nanostructures
01/31/2007EP1748490A1 Fabrication method for epitaxially grown solid-state image sensing devices and such devices
01/31/2007EP1747592A1 Non-volatile transistor memory array incorporating read-only elements with single mask set
01/31/2007EP1747591A1 Covers for microelectronic imagers and methods for wafer-level packaging of microelectronic imagers
01/31/2007EP1747590A2 Photovoltaic thin-film cell produced from metallic blend using high-temperature printing
01/31/2007EP1747588A2 Illuminable gaas switching component with a transparent housing, and microwave circuit therewith
01/31/2007EP1747585A1 Photovoltaic module with an electric device
01/31/2007CN2864630Y Sensor for ultraviolet detection
01/31/2007CN1906556A Arc quenching device for a solar array
01/31/2007CN1906516A Photoelectric conversion connector for optical fiber
01/31/2007CN1906503A Aspherical microlens arrays and fabrication method thereof and applications using the same
01/31/2007CN1906332A Nano-array electrode manufacturing method and photoelectric converter using same
01/31/2007CN1905217A Method for making gallium arsenide/gallium stibide laminated focusing solar battery
01/31/2007CN1905216A Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
01/31/2007CN1905215A Process for preparing TiO2 nanocrystal porous film electrode by low-temp. electrophoresis sedimentation
01/31/2007CN1905204A 电光器件及其制作方法 Electro-optical device and manufacturing method thereof
01/31/2007CN1905169A Semiconductor device and its manufacturing method
01/31/2007CN1905144A Methods for packaging an image sensor and a packaged image sensor
01/31/2007CN1905140A Image sensor package, optical glass therefor and processing method
01/31/2007CN1905132A Silicon carbon germanium (SiCGe) substrate for a group III nitride-based device
01/31/2007CN1298037C Indium-containing wafer and method for production thereof
01/30/2007US7171128 Optical signal receiving module, optical signal receiver and optical fiber communication equipment
01/30/2007US7170918 Resonant cavity diode operating at the same wavelength for emission and detection of light
01/30/2007US7170145 Method of manufacturing semiconductor device, flexible substrate, and semiconductor device
01/30/2007US7170143 Semiconductor photo-detection device and radiation apparatus
01/30/2007US7170142 Planar integrated circuit including a plasmon waveguide-fed Schottky barrier detector and transistors connected therewith
01/30/2007US7170137 Semiconductor device and method of manufacturing the same
01/30/2007US7170133 Transistor and method of fabricating the same
01/30/2007US7170127 Semiconductor device and fabricating method thereof
01/30/2007US7170122 Ferroelectric polymer memory with a thick interface layer
01/30/2007US7170118 Field effect transistor (FET) device having corrugated structure and method for fabrication thereof
01/30/2007US7170117 Image sensor with improved dynamic range and method of formation
01/30/2007US7170112 Graded-base-bandgap bipolar transistor having a constant—bandgap in the base
01/30/2007US7170111 Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
01/30/2007US7170109 Heterojunction semiconductor device with element isolation structure
01/30/2007US7170108 Semiconductor light-emitting device and method for fabricating the same
01/30/2007US7170107 IC chip having a protective structure