Patents
Patents for H01L 31 - Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (138,256)
07/2006
07/25/2006US7081585 Super structure for roof patio solar plant
07/25/2006US7081584 Solar based electrical energy generation with spectral cooling
07/25/2006US7081412 Double-sided etching technique for semiconductor structure with through-holes
07/25/2006US7081394 Device for electrostatic discharge protection and method of manufacturing the same
07/25/2006US7081368 Method for detecting gas with the use of photocurrent amplification and the like and gas sensor
07/20/2006WO2006076086A2 Tic mos devices on high-k-dielectric gate stacks
07/20/2006WO2006075811A1 Optical absorber layers for solar cell and method of manufacturing the same
07/20/2006WO2006075427A1 Back junction solar cell and process for producing the same
07/20/2006WO2006075426A1 Back junction solar cell and process for producing the same
07/20/2006WO2006074990A1 Semiconductor photodiode and method of making
07/20/2006WO2006074561A1 Connection box for a solar panel and solar panel comprising a connection box
07/20/2006WO2006048319A3 Method for producing a two-side light-sensitive solar cell and double-sided light-sensitive solar cell
07/20/2006WO2005101512A3 Mesa structure photon detection circuit
07/20/2006US20060160375 Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry, methods of forming trench isolation in the fabrication of integrated circuitry, Method of depositing silicon dioxide-comprising layers in the fabrication of integrated circuitry, and methods of forming bit line over capacitor arrays of memory cells
07/20/2006US20060160345 Innovative growth method to achieve high quality III-nitride layers for wide band gap optoelectronic and electronic devices
07/20/2006US20060160339 Soi contact structure(s) and corresponding production method
07/20/2006US20060160336 Silicon layer production method and solar cell production method
07/20/2006US20060160316 Silicon Carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
07/20/2006US20060160280 Thin film transistor, a method for preparing the same and a flat panel display employing the same
07/20/2006US20060159609 Oxynitride compounds, methods of preparation, and uses thereof
07/20/2006US20060157828 Leadframe - based housing, leadframe strip, surface - mounted optoelectronic -component, and production method
07/20/2006US20060157812 Infrared solid-state image pickup apparatus and a production method thereof
07/20/2006US20060157811 Fabrication of low leakage-current backside illuminated photodiodes
07/20/2006US20060157782 Trench fet with self aligned source and contact
07/20/2006US20060157780 Semiconductor device and method for fabricating the same
07/20/2006US20060157768 Semiconductor device and method for fabricating the same
07/20/2006US20060157764 Methods and apparatuses for producing a polymer memory device
07/20/2006US20060157761 Image sensor with self-boosting and methods of operating and fabricating the same
07/20/2006US20060157760 Imaging apparatus and imaging method
07/20/2006US20060157759 Image pickup device, its control method, and camera
07/20/2006US20060157758 Image sensor and pixel having an optimized floating diffusion
07/20/2006US20060157757 Image display device
07/20/2006US20060157756 Solid-state imaging device and manufacturing method thereof
07/20/2006US20060157736 Radiation hardened bipolar junction transistor
07/20/2006US20060157734 Semiconductor device and method of manufacturing semiconductor device
07/20/2006US20060157733 Complex oxides for use in semiconductor devices and related methods
07/20/2006US20060157732 Fabrication of MOS-gated strained-Si and SiGe buried channel field effect transistors
07/20/2006US20060157727 Semiconductor photodetector
07/20/2006US20060157718 Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same
07/20/2006US20060157713 Structures formed in diamond
07/20/2006US20060157688 Methods of forming semiconductor constructions and integrated circuits
07/20/2006US20060157687 Non-planar MOS structure with a strained channel region
07/20/2006US20060157686 Quantum dot phosphor for light emitting diode and method of preparing the same
07/20/2006US20060157685 Semiconductor device method of manfacturing a quantum well structure and a semiconductor device comprising such a quantum well structure
07/20/2006US20060157645 Low voltage active CMOS pixel on an N-type substrate with complete reset
07/20/2006US20060157274 Wafer-level hermetic micro-device packages
07/20/2006US20060157105 Solar cell and semiconductor device, and manufacturing method thereof
07/20/2006US20060157104 Surface-modified semiconductor electrode, dye-sensitized solar cell, method of manufacturing the solar cell, and polymer composition used for the method
07/20/2006DE102005047170A1 Electronic device e.g. optical device used for optical connector, has no wiring pattern at outer periphery edge or its vicinity of mold resin and between surface of substrate and base
07/20/2006DE102005016559A1 Image sensor die includes substrate, image sensor array, micro lens, and protection layer formed on the micro lens
07/20/2006DE102005003595A1 Optical component has diffractive and refractive element, comprehensively photo-sensitive glass or photosensitive glass ceramic which contain light propagation influencing structures
07/20/2006DE102005003594A1 Optical assembly unit for sensors has diffractive or refractive element made of photosensitive glass or photosensitive glass ceramic and covers light propagating affecting structures partly in volume
07/20/2006DE102005002942A1 Dye solar cells has barrier layer metal, e.g titanium, tungsten, tantalum, embedded on surface area as substrate on which mixed phase metallic oxide layer, e.g. anatase and rutile, resulting from spark discharge is applied
07/20/2006DE102005000767A1 Monolithische Mehrfach-Solarzelle Monolithic multiple solar cell
07/19/2006EP1681751A1 Semiconductor laser module, spatial optical transmission system and electronic appliance
07/19/2006EP1681730A2 Photonic device comprising molybdenum oxide and method of fabrication
07/19/2006EP1681729A1 Sealed structure of optical device, optical coupler, and method for sealing optical device
07/19/2006EP1681726A1 Method and apparatus for processing a conductive thin film
07/19/2006EP1681723A1 Infrared solid-state image pickup apparatus and a production method thereof
07/19/2006EP1680813A2 Probe testing structure
07/19/2006CN2798314Y Broad spectrum response alloy electronic resonance emission photocell
07/19/2006CN1806470A Luminescent device, display device, and display device control method
07/19/2006CN1806349A Organic solar cell comprising an intermediate layer with asymmetrical transport properties
07/19/2006CN1806344A Contacts fabric using heterostructure of metal/semiconductor nanorods and fabrication method thereof
07/19/2006CN1806343A Steady-state-non-equilibrium distribution of free carriers and photon energy up-conversion using same
07/19/2006CN1805284A Solid state relay, electronic device, and method for manufacturing solid state relays
07/19/2006CN1805162A Gallium nitride-based light emitting diode
07/19/2006CN1805156A One-dimensional nanometer semiconductor structure based photoelectric sensor and its manufacturing method
07/19/2006CN1265621C Defect pixel correction of solid state image sensor and information forming method and imaging device
07/19/2006CN1265471C Electrooptical device and method for driving same
07/19/2006CN1265470C Electroluminescent display and manufacturing method thereof
07/19/2006CN1265469C Method for producing solar cell assembly
07/19/2006CN1265464C Semiconductor device and producing method thereof
07/19/2006CN1265460C Memory device and method for driving the memory device
07/19/2006CN1265398C Method for forming pattern of transparent conductive membrane
07/19/2006CN1265209C Flash panel and radiographic image sensor
07/19/2006CN1264478C Device and method for flexible cable connection for detector modules
07/18/2006US7079776 Optical signal transmission board and apparatus
07/18/2006US7079307 Wavelength conversion device with avalanche multiplier
07/18/2006US7078997 Transformer assembly, and power conversion apparatus and solar power generation apparatus using the same
07/18/2006US7078799 Semiconductor package
07/18/2006US7078785 Semiconductor device and making thereof
07/18/2006US7078783 Vertical unipolar component
07/18/2006US7078782 Semiconductor device
07/18/2006US7078780 Schottky barrier diode and method of making the same
07/18/2006US7078779 Enhanced color image sensor device and method of making the same
07/18/2006US7078776 Low threshold voltage semiconductor device
07/18/2006US7078774 Semiconductor memory device having a shallow trench isolation structure
07/18/2006US7078773 Nitride-encapsulated FET (NNCFET)
07/18/2006US7078769 Nonvolatile memory and manufacturing method thereof
07/18/2006US7078767 Semiconductor device for limiting leakage current
07/18/2006US7078759 Semiconductor device manufacturing method and semiconductor device
07/18/2006US7078754 Methods and apparatuses for producing a polymer memory device
07/18/2006US7078753 Image sensor
07/18/2006US7078752 method of controlling a MOS-type photodetector
07/18/2006US7078751 Solid-state imaging device
07/18/2006US7078750 Method of fabricating a robust gate dielectric using a replacement gate flow
07/18/2006US7078748 Multi-layer gate stack structure comprising a metal layer for a FET device, and method for fabricating the same
07/18/2006US7078745 CMOS imager with enhanced transfer of charge and low voltage operation
07/18/2006US7078744 Transistor emitter having alternating undoped and doped layers