Patents
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
12/2009
12/03/2009US20090295285 Spontaneous emission display, spontaneous emission display manufacturing method, transparent conductive film, electroluminescence device, solar cell transparent electrode, and electronic paper transparent electrode
12/03/2009US20090295284 Electroluminescent display device and thermal transfer donor film for the electroluminescent display device
12/03/2009US20090295273 Display panel and method for manufacturing the same
12/03/2009US20090294890 Multi-colour sensitive device for color image sensing
12/03/2009US20090294887 Semiconductor device
12/03/2009US20090294884 Solid-state imaging device and method for manufacturing the same
12/03/2009US20090294874 Method of Fabricating Semiconductor Apparatus Having Saddle-Fin Transistor and Semiconductor Apparatus Fabricated Thereby
12/03/2009US20090294870 Semiconductor device with trench gate and method of manufacturing the same
12/03/2009US20090294869 Negative Differential Resistance Device and Memory Using the Same
12/03/2009US20090294868 Drive current adjustment for transistors formed in the same active region by locally inducing different lateral strain levels in the active region
12/03/2009US20090294866 Transistor Fabrication Methods and Structures Thereof
12/03/2009US20090294865 Schottky Diodes Having Low-Voltage and High-Concentration Rings
12/03/2009US20090294862 Non-volatile semiconductor memory device and fabricating method thereof
12/03/2009US20090294861 Sram memory cell having transistors integrated at several levels and the threshold voltage vt of which is dynamically adjustable
12/03/2009US20090294856 I/o and power esd protection circuits by enhancing substrate-bias in deep-submicron cmos process
12/03/2009US20090294845 Insulated gate type semiconductor device and method for fabricating the same
12/03/2009US20090294838 Non-volatile semiconductor memory devices
12/03/2009US20090294830 Memory device with high dielectric constant gate dielectrics and metal floating gates
12/03/2009US20090294823 Method of manufacturing a semiconductor integrated circuit using a selective disposal spacer technique and semiconductor integrated circuit manufactured thereby
12/03/2009US20090294822 Circuit with transistors integrated in three dimensions and having a dynamically adjustable threshold voltage vt
12/03/2009US20090294820 Capacitors and Methods of Manufacture Thereof
12/03/2009US20090294819 Methods for enhancing capacitors having roughened features to increase charge-storage capacity
12/03/2009US20090294818 Ferroelectric polymer
12/03/2009US20090294815 Solid state imaging device including a semiconductor substrate on which a plurality of pixel cells have been formed
12/03/2009US20090294813 Optical Sensor Including Stacked Photodiodes
12/03/2009US20090294812 Optical Sensor Including Stacked Photosensitive Diodes
12/03/2009US20090294803 Methods and devices for fabricating and assembling printable semiconductor elements
12/03/2009US20090294801 METHODS OF INTEGRATING REVERSE eSiGe ON NFET AND SiGe CHANNEL ON PFET, AND RELATED STRUCTURE
12/03/2009US20090294799 Semiconductor device
12/03/2009US20090294779 Electronic element wafer module, method for manufacturing an electronic element wafer module, electronic element module,and electronic information device
12/03/2009US20090294639 Wafer level image module
12/03/2009US20090294635 Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method
12/03/2009US20090294634 Imaging device
12/03/2009US20090294633 Image sensor using photo-detecting molecule and method of operating the same
12/03/2009US20090294632 Globally reset image sensor pixels
12/03/2009US20090294631 Image sensor having reduced well bounce
12/03/2009US20090294630 Image sensor, image reading device and production method of image sensor
12/03/2009US20090294629 Image sensing device
12/03/2009DE4343140B4 Halbleiteranordnung zur Beeinflussung der Durchbruchsspannung von Transistoren A semiconductor device for influencing the breakdown voltage of transistors
12/03/2009DE102008047127A1 Integral ausgebildete Drain- und Source-Gebiete in einem Silizium/Germanium enthaltenden Transistorbauelement Integrally formed drain and source regions containing a silicon / germanium transistor device
12/03/2009DE102008026182A1 Mikrostrukturbauelement mit einem kompressiv verspannten Material mit kleinem ε Microstructure device with a compressively stressed material with small ε
12/03/2009DE102008025755A1 Organisches Licht emittierendes Bauteil und Leuchtmittel mit einem solchen Bauteil Organic light emitting device and light source with such a component
12/03/2009DE102008024519A1 Integrierte Schaltung mit einer ferroelektrischen Speicherzelle und Herstellungsverfahren An integrated circuit comprising a ferroelectric memory cell, and manufacturing method
12/03/2009DE102008016512B4 Erhöhen der Verspannungsübertragungseffizienz in einem Transistor durch Verringern der Abstandshalterbreite während der Drain- und Source-Implantationssequenz Increasing the tension transmission efficiency in a transistor by reducing the spacer width during the drain and source implantation sequence
12/03/2009DE102006062403B4 Integriertes Schaltkreisbauelement sowie Herstellungs- und Betriebsverfahren Integrated circuit device and manufacturing and operating procedures
12/02/2009EP2128901A1 Storage element and storage device
12/02/2009EP2128891A1 Process for producing laminated substrate and laminated substrate
12/02/2009EP2128651A1 Radiation detector
12/02/2009EP2126978A2 Solar cell contact fingers and solder pad arrangement for enhanced efficiency
12/02/2009EP2126976A1 Panel of organic light-emitting diodes, provided with integrated top supply electrodes
12/02/2009EP2126975A2 Active matrix display device
12/02/2009EP2126974A2 Thermopile wire, winding support, and method and machine for the production of a thermoelectric generator
12/02/2009EP2126973A2 Photodetector and spatial information detecting device using the same
12/02/2009EP2126972A1 Method for self-monitoring the breakdown in semiconductor components and semiconductor component adapted thereto
12/02/2009EP2126970A2 Memory having a vertical access device
12/02/2009EP2126889A1 Luminance adjustment in a display device
12/02/2009EP2126526A1 Sensor pixels, arrays and array systems and methods therefor
12/02/2009EP1839337B1 Lighting device
12/02/2009EP1485959B1 Optical lighting device and method to produce lighting devices adopting said optical device
12/02/2009EP1415334B1 Manufacture of semiconductor devices with schottky barriers
12/02/2009EP1198852B1 Preferred methods for producing electrical circuit elements used to control an electronic display
12/02/2009CN201355615Y Embedded structure of alloy material
12/02/2009CN201355613Y Integrated circuit chip with functions of voltage conversion and on-off switch assembly
12/02/2009CN101595564A Active matrix display apparatus
12/02/2009CN101595555A FLOTOX-type EEPROM
12/02/2009CN101594491A Solid-state imaging device, imaging device and driving method of solid-state imaging device
12/02/2009CN101594490A Solid-state imaging device, method of driving the solid-state imaging device, and electronic device
12/02/2009CN101594131A Semiconductor device
12/02/2009CN101593816A Electro-optic device and method for manufacturing the same
12/02/2009CN101593810A Nano structure quick-switch memristor and manufacturing method thereof
12/02/2009CN101593809A Resistance random access memory and manufacture method
12/02/2009CN101593801A Method for preparing inverted light-emitting diodes
12/02/2009CN101593773A Trench-type power MOS transistor and integrated circuit utilizing the same
12/02/2009CN101593769A Display apparatus
12/02/2009CN101593768A Display device
12/02/2009CN101593767A Pixel and organic light emitting display using the same
12/02/2009CN101593766A Organic light emitting display device
12/02/2009CN101593765A Chip integrating various resistance conversion memory modules and method for manufacturing same
12/02/2009CN101593764A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/02/2009CN101593763A Image sensor using photo-detecting molecule and method of operating the same
12/02/2009CN101593762A Electronic element wafer module, method for manufacturing an electronic element wafer module, electronic element module,and electronic information device
12/02/2009CN101593761A Sensing device with sealing compound protective layer and manufacture method thereof
12/02/2009CN101593760A Novel solar cell
12/02/2009CN101593759A Novel solar cell
12/02/2009CN101593758A Drive circuit, active matrix substrate, and liquid crystal display device
12/02/2009CN101593757A Nonvolatile memory device, method of manufacturing the nonvolatile memory device, and method of manufacturing flat panel display device provided with the nonvolatile memory device
12/02/2009CN101593756A Thin film transistor (TFT) substrate, manufacturing method thereof and display device
12/02/2009CN101593755A Memory unit based on metal/reverse ferroelectric film/metallic oxide/semiconductor field-effect tube structure
12/02/2009CN101593754A Read only memory (ROM) cell array and manufacturing method thereof
12/02/2009CN101593753A Nonvolatile memory and manufacturing method thereof
12/02/2009CN101593752A Bipolar device compatible with cmos process technology
12/02/2009CN101593751A Integrated circuit structure
12/02/2009CN101593750A Core substrate and printed wiring board
12/02/2009CN101593749A Photoelectric converter
12/02/2009CN101593731A Liquid crystal display, active element array substrate and method for manufacturing active element array substrate
12/02/2009CN101593730A Image display system and manufacture method thereof
12/02/2009CN101593729A Method for manufacturing silication metal electrode of OTP memory
12/02/2009CN101593728A Complementary metal oxide semiconductor (CMOS) device with stress membrane and manufacturing method thereof
12/02/2009CN101593727A Method of manufacturing organic light emitting display and organic light emitting display
12/02/2009CN101593679A Indium arsenide (InAs) quantum dot material modulated by covering layers of gallium arsenide (GaAs) and gallium antimonide (GaSb) and growing method thereof