Patents
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
04/2010
04/27/2010US7704784 Semiconductor devices having regions of induced high and low conductivity, and methods of making the same
04/27/2010US7704780 Optical enhancement of integrated circuit photodetectors
04/27/2010US7704779 Image sensing device having protection pattern on the microlens, camera module, and method of forming the same
04/27/2010US7704775 CCD type solid-state imaging apparatus and manufacturing method for the same
04/27/2010US7704765 Method for manufacturing semiconductor device
04/27/2010US7704760 Method of making light emitting diode with irregular surface and independent valleys
04/27/2010US7704650 Donor sheet, color filter, organic EL element and method for producing them
04/27/2010US7704326 Deposition mask and manufacturing method thereof
04/27/2010US7703997 Image sensor module having precise image-projection control
04/22/2010WO2010045184A1 Vertically integrated memory structures
04/22/2010WO2010045087A2 Oc dram cell with increased sense margin
04/22/2010WO2010044965A1 Capacitors, dielectric structures, and methods of forming dielectric structures
04/22/2010WO2010044943A2 Light field image sensor, method and applications
04/22/2010WO2010044826A2 Image sensor having multiple sensing layers
04/22/2010WO2010044746A1 An integrated assembly and a method of manufacturing the same
04/22/2010WO2010044341A1 Semiconductor device and manufacturing method thereof
04/22/2010WO2010044279A1 Epitaxial substrate for solid-state imaging device with gettering sink, semiconductor device, backlight-type solid-state imaging device and manufacturing method thereof
04/22/2010WO2010044153A1 Imaging device
04/22/2010WO2010044134A1 Process for producing magnetoresistance effect element and program for producing magnetoresistance effect element
04/22/2010WO2010043804A1 Integrated circuit comprising a matrix of electronic cells and pixel-based detector comprising such a circuit
04/22/2010WO2010043742A1 Photon detector in the microwave range and detection method
04/22/2010WO2010043485A1 Esd protection
04/22/2010WO2010043427A1 Detector material for a detector for use in ct systems, detector element and detector
04/22/2010US20100099234 Semiconductor device and method of fabrication thereof
04/22/2010US20100099228 Method for reducing poly-depletion in dual gate cmos fabrication process
04/22/2010US20100099227 Semiconductor device and method of manufacturing the same
04/22/2010US20100099208 Semiconductor light emitting device and method of manufacturing the same
04/22/2010US20100097854 Flash memory and flash memory array
04/22/2010US20100097537 Thin film transistor substrate capable of enhancing image clarity and reducing residual images
04/22/2010US20100097512 Solid-state imaging apparatus, camera, and method of manufacturing solid-state imaging apparatus
04/22/2010US20100097510 Image pickup element and control method therefor, and camera
04/22/2010US20100097486 Image sensing device and image sensing system
04/22/2010US20100097410 Display apparatus
04/22/2010US20100097157 Semiconductor device and manufacturing the same
04/22/2010US20100097156 Semiconductor device and manufacturing the same
04/22/2010US20100096748 Combined semiconductor apparatus with semiconductor thin film
04/22/2010US20100096732 Semiconductor integrated circuit device
04/22/2010US20100096722 Fuse in a Semiconductor Device and Method for Fabricating the Same
04/22/2010US20100096719 Methods of forming fine patterns in integrated circuit devices
04/22/2010US20100096718 Backside illuminated image sensor
04/22/2010US20100096710 Semiconductor fingerprint apparatus with flat touch surface
04/22/2010US20100096703 Semiconductor device and manufacturing method thereof
04/22/2010US20100096702 Semiconductor device and method of fabricating the same
04/22/2010US20100096684 Semiconductor device and its manufacture method
04/22/2010US20100096681 Cell structure for a semiconductor memory device and method of fabricating the same
04/22/2010US20100096679 Fet, ferroelectric memory device, and methods of manufacturing the same
04/22/2010US20100096677 Backside-illuminated solid-state image pickup device
04/22/2010US20100096676 Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
04/22/2010US20100096672 Self-aligned, integrated circuit contact
04/22/2010US20100096671 Cell of Semiconductor Device Having Gate Electrode Conductive Structures Formed from Rectangular Shaped Gate Electrode Layout Features and At Least Eight Transistors
04/22/2010US20100096670 Semiconductor device with interface circuit and method of configuring semiconductor devices
04/22/2010US20100096669 Memory cell array comprising wiggled bit lines
04/22/2010US20100096648 Ac light emitting diode and method for fabricating the same
04/22/2010US20100096647 Light output device
04/22/2010US20100096636 Thin film transistor array having storage capacitor
04/22/2010US20100096632 Display device and manufacturing method thereof
04/22/2010US20100096611 Vertically integrated memory structures
04/22/2010US20100096556 Miniaturized, low power fgmosfet radiation sensor and wireless dosimeter system
04/22/2010US20100096176 Contact structure of a wires and method manufacturing the same, and thin film transistor substrate including the contact structure and method manufacturing the same
04/22/2010DE19549726B4 Lichtemittierendes Bauelement und Herstellverfahren für dieses The light emitting device and manufacturing method of this
04/22/2010DE10324053B4 Unterstützungsliner zur Steuerung der Höhe von Isolationsgräben bei der Herstellung von vertikalen DRAMs Liner support for controlling the height of isolation trenches in the manufacture of DRAMs vertical
04/22/2010DE102008047865A1 Circuit arrangement for use in semiconductor substrate, has multiple metallization planes, which extend parallel to main surface of semiconductor substrate
04/22/2010DE102008045034A1 Durchlassstromeinstellung für Transistoren, die im gleichen aktiven Gebiet hergestellt sind, durch lokales Vorsehen eines eingebetteten verformungsinduzierenden Halbleitermaterials in dem aktiven Gebiet Forward current setting transistors fabricated in the same active region, by providing a local embedded strain-inducing semiconductor material in the active region
04/22/2010DE102007009914B4 Halbleiterbauelement in Form eines Feldeffekttransistors mit einem Zwischenschichtdielektrikumsmaterial mit erhöhter innerer Verspannung und Verfahren zur Herstellung desselben Of the same semiconductor device in the form of a field effect transistor with an interlayer dielectric with increased internal stress and methods for preparing
04/22/2010DE102005019305B4 ESD-Schutzstruktur mit Diodenreihenschaltung und Halbleiterschaltung mit derselben ESD protection structure with diode series circuit and the semiconductor circuit with the same
04/22/2010DE102004063583B4 Nichtflüchtige Speichervorrichtung A non-volatile memory device
04/22/2010CA2740749A1 Photon detector in the microwave range and detection method
04/21/2010EP2178344A1 Organic electroluminescence device and method for manufacturing the same
04/21/2010EP2178212A1 Logical element
04/21/2010EP2178184A1 Protection device for supply circuit with positive and negative double power
04/21/2010EP2178133A2 Flexible Light-Emitting Device, Electronic Device, and Method for Manufacturing Flexible-Light Emitting Device
04/21/2010EP2178124A1 Organic light emitting display
04/21/2010EP2178123A2 ESD induced artifact reduction design for a thin film transistor image sensor array
04/21/2010EP2178122A1 Memory element and memory device
04/21/2010EP2178121A1 Method for protecting and dissipating electrostatic charges on an integrated circuit
04/21/2010EP2178120A2 Driver circuit, optical print head, and image forming apparatus
04/21/2010EP2178115A1 Semiconductor integrated circuit
04/21/2010EP2178112A2 Solid-state imaging device and method of manufacturing the same
04/21/2010EP2177302A1 Method of removing layered material of a layered construction with a laser beam, with a preliminary grooving step and a removing step
04/21/2010EP2176886A1 Cascode current sensor for discrete power semiconductor devices
04/21/2010EP1504471B1 Layer arrangement and memory arrangement
04/21/2010EP1159761B1 Electronic nanostructure device
04/21/2010CN201440415U Micro-miniature CMOS image sensor
04/21/2010CN201440413U Encapsulation structure
04/21/2010CN201440410U Infrared receiving head
04/21/2010CN1909239B Phase change material, phase change random access memory including the same, and methods of manufacturing and operating the same
04/21/2010CN1894795B Laminated semiconductor substrate and process for producing the same
04/21/2010CN1794356B 电荷泵电路 The charge pump circuit
04/21/2010CN1783334B Magnetic memory and method of manufacturing the same
04/21/2010CN1744439B Level shifter circuit, display device and its driving circuit and stress test method
04/21/2010CN1649174B Thin film transistor and method for fabricating the same
04/21/2010CN1645515B Nonvolatile semiconductor memory
04/21/2010CN1638577B Organic electro-luminescence display and fabricating method thereof
04/21/2010CN1573468B Planar luminescent illumination device including auxiliary electrode
04/21/2010CN101697368A 有机半导体元件 The organic semiconductor element
04/21/2010CN101697353A Light emitting device
04/21/2010CN101697352A Multi-point insulated silicon transistor with double ultra sallow isolation structures
04/21/2010CN101697351A Structure for testing semiconductor
04/21/2010CN101697350A Multi-point silicon transistor with double ultra sallow isolation structures
04/21/2010CN101697349A A surface geometry for mos-gated device