Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
11/2010
11/18/2010US20100289094 Enhancing deposition uniformity of a channel semiconductor alloy by an in situ etch process
11/18/2010US20100289091 Semiconductor device and method of manufacturing the same
11/18/2010US20100289090 Enhancing uniformity of a channel semiconductor alloy by forming sti structures after the growth process
11/18/2010US20100289089 Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization
11/18/2010US20100289088 Threshold voltage improvement employing fluorine implantation and adjustment oxide layer
11/18/2010US20100289087 Semiconductor device and method of manufacturing a semiconductor device
11/18/2010US20100289086 Source/Drain Strained Layers
11/18/2010US20100289085 Asymmetric Semiconductor Devices and Method of Fabricating
11/18/2010US20100289083 Multi-step deposition of a spacer material for reducing void formation in a dielectric material of a contact level of a semiconductor device
11/18/2010US20100289082 Isolation with offset deep well implants
11/18/2010US20100289081 Reduced silicon thickness of n-channel transistors in soi cmos devices
11/18/2010US20100289080 Semiconductor device comprising metal gates and a silicon containing resistor formed on an isolation structure
11/18/2010US20100289079 High-voltage soi mos device structure and method of fabrication
11/18/2010US20100289077 Dual gate of semiconductor device capable of forming a layer doped in high concentration over a recessed portion of substrate for forming dual gate with recess channel structure and method for manufacturing the same
11/18/2010US20100289075 Semiconductor device having integrated mosfet and schottky diode and manufacturing method thereof
11/18/2010US20100289070 Methods for isolating portions of a loop of pitch-multiplied material and related structures
11/18/2010US20100289069 Semiconductor integrated-circuit device
11/18/2010US20100289059 Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation
11/18/2010US20100289041 Semiconductor light emitting device
11/18/2010US20100289037 Semiconductor device, manufacturing method thereof and display device
11/18/2010US20100289034 Method for forming lens, method for manufacturing semiconductor apparatus, and electronic information device
11/18/2010US20100289029 Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device
11/18/2010US20100289028 Electronic device, display device, interface circuit and differential amplification device, which are constituted by using thin-film transistors
11/18/2010US20100289027 Electronic device, display device, interface circuit and differential amplification device, which are constituted by using thin-film transistors
11/18/2010US20100289025 Thin film transistor array substrate, display panel comprising the same, and method for manufacturing thin film transistor array substrate
11/18/2010US20100288996 Memory arrays including memory levels that share conductors, and methods of forming such memory arrays
11/18/2010US20100288911 Solid-state imaging device, electronic apparatus, and method for manufacturing solid-state imaging device
11/18/2010US20100288910 Adaptive spatial-spectral processing (assp)
11/18/2010DE112005002428B4 Verfahren zur Herstellung von Doppelgate- und Trigate-Transistoren mit unabhängigem Zugriff in demselben Prozeßfluß sowie eine diese umfassende integrierte Schaltung Process for the preparation of Doppelgate- and tri-gate transistors with independent access to the same process flow as well as a comprehensive, integrated circuit this
11/18/2010DE10360884B4 Oganische Doppeltafel-Elektrolumineszenz-Anzeigevorrichtung und Herstellungsverfahren für diesselbe Oganische dual-panel electroluminescent display device and manufacturing method for the same
11/18/2010DE102009057821A1 OELD und Verfahren zu dessen Herstellung OELD and process for its preparation
11/18/2010DE102009021489A1 Erhöhen der Abscheidegleichmäßigkeit für eine Halbleiterlegierung durch einen in-situ-Ätzprozess Increasing the Abscheidegleichmäßigkeit for a semiconductor alloy by an in situ etching process
11/18/2010DE102009021487A1 Halbleiterelement, das in einem kristallinen Substratmaterial aufgebaut ist und ein eingebettetes in-situ-dotiertes Halbleitermaterial aufweist A semiconductor element, which is constructed in a crystalline substrate material and an embedded in-situ-doped semiconductor material
11/18/2010DE102009021486A1 Einstellen der Schwellwertspannung für komplexe Transistoren durch Diffusion in einem dielektrischen Gatedeckschichtmaterial vor der Stabilisierung des Gatedielektrikumsstapels Setting the threshold voltage of transistors by complex diffusion in a gate dielectric cover layer material prior to stabilization of the Gatedielektrikumsstapels
11/18/2010DE102009021485A1 Halbleiterbauelement mit Metallgate und einem siliziumenthaltenden Widerstand, der auf einer Isolationsstruktur gebildet ist A semiconductor device comprising a silicon-containing and metal gate resistor, which is formed on an isolation structure
11/18/2010DE102009021480A1 Reduzierte Siliziumdicke in n-Kanaltransistoren in SOI-CMOS Bauelementen Reduced silicon thickness in n-channel transistors in SOI CMOS devices
11/18/2010DE102005019860B4 Steuerbare Halbleiterdiode, elektronisches Bauteil und Spannungszwischenkreisumrichter Controllable semiconductor diode, electronic component and voltage source inverter
11/18/2010DE102004045492B4 Ätzverfahren zur Herstellung einer Halbleitervorrichtung mit einer unteren Kondensatorelektrode Etching process of manufacturing a semiconductor device with a lower capacitor electrode
11/18/2010DE102004021157B4 Dünnschichttransistor-Arraysubstrat und Verfahren zum Herstellen desselben Of the same thin film transistor array substrate and methods for making
11/18/2010DE102004009141B4 Speicherzelle mit Grabentransistor-Gate zum Erzielen eines großen, selbst ausgerichteten offenen Kontaktspielraums und Verfahren zur Herstellung derselben Memory cell with grave transistor gate for obtaining a large self-aligned contact open latitude and process for producing same
11/17/2010EP2252069A2 Two-dimensional solid-state image capture device and polarization-light data processing method thereof
11/17/2010EP2252047A1 Solid-state imaging apparatus
11/17/2010EP2251917A1 Manufacturing method for piezoelectric/electrostrictive film type element
11/17/2010EP2251909A2 Solar cell structure and manufacturing method thereof
11/17/2010EP2251906A1 Method of fabricating organic light emitting diode display
11/17/2010EP2251905A2 Solid-state imaging device, electronic apparatus, and method for manufacturing solid-state imaging device
11/17/2010EP2251904A1 Driving method for reverse conducting semiconductor element, semiconductor device, and feeding device
11/17/2010EP2251901A1 Semiconductor device
11/17/2010EP2251895A1 Method for manufacturing bonded wafer
11/17/2010EP2251718A1 Metal optical filter capable of photo lithography process and image sensor including the same
11/17/2010EP2251717A1 Wafer level lens array and manufacturing method therefor
11/17/2010EP2251715A1 Solid-state image capture device, manufacturing method therefor, and electronic apparatus
11/17/2010EP2251713A1 Detector for verifying ionising beams
11/17/2010EP2250673A1 Image sensor with self-aligned filter
11/17/2010EP2250671A1 Integrated circuit with mosfet fuse element
11/17/2010EP2250666A1 Semiconductor device and method of manufacture thereof
11/17/2010EP2250665A1 Semiconductor device and method of manufacture thereof
11/17/2010EP1284496B1 Junction field-effect transistor and method of manufacture thereof
11/17/2010EP1177011B1 Retina implant
11/17/2010CN201638819U AMOLED (Active Matrix/Organic Light Emitting Diode) display device
11/17/2010CN201638818U OLED (Organic Light Emitting Diode) display and mask thereof
11/17/2010CN201638817U Array substrate
11/17/2010CN201637973U Array substrate and liquid crystal display
11/17/2010CN1953233B Light emitting device
11/17/2010CN1921004B Magnetic memory device and method of fabricating the same
11/17/2010CN1838423B Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device
11/17/2010CN1832188B Solid-state imaging device
11/17/2010CN1738502B 有机半导体元件 The organic semiconductor element
11/17/2010CN1630437B Image display
11/17/2010CN1536944B Display device and equipment using the same
11/17/2010CN101889358A High aperture ratio pixel layout for display device
11/17/2010CN101889346A Image sensor with a spectrum sensor
11/17/2010CN101888491A Solid-state imaging apparatus
11/17/2010CN101888490A Solid-state imaging apparatus, driving method of the solid-state imaging apparatus, and electronic equipment
11/17/2010CN101888489A Solid-state image capture device, manufacturing method therefor, and electronic apparatus
11/17/2010CN101887946A Manufacturing method of organic electroluminescent device and its image display system
11/17/2010CN101887935A Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
11/17/2010CN101887919A Semiconductor device and manufacturing method thereof
11/17/2010CN101887918A Semiconductor device and manufacturing method thereof
11/17/2010CN101887916A Asymmetric semiconductor devices and method of fabricating
11/17/2010CN101887910A Gate stack structure for semiconductor flash memory device and preparation method thereof
11/17/2010CN101887909A LED module and manufacturing method thereof
11/17/2010CN101887908A Active drive organic electroluminescent device and preparation method thereof
11/17/2010CN101887907A Active drive organic electroluminescent device and preparation method thereof
11/17/2010CN101887906A Image display system
11/17/2010CN101887905A Image display system and manufacturing method thereof
11/17/2010CN101887904A Organic light-emitting diode display of integrated touch screen
11/17/2010CN101887903A Phase change memory with transistor, resistor and capacitor and operating method thereof
11/17/2010CN101887902A Solid state imaging device and imaging apparatus
11/17/2010CN101887901A Solid-state image pickup device, method of manufacturing solid-state image pickup device, and electronic apparatus
11/17/2010CN101887900A Two-dimensional solid-state image capture device and polarization-light data processing method therefor
11/17/2010CN101887899A Solid-state imaging device, electronic apparatus, and method for manufacturing solid-state imaging device
11/17/2010CN101887898A TFT-LCD (Thin Film Transistor Liquid Crystal Display) array base plate and manufacturing method thereof
11/17/2010CN101887897A TFT-LCD (Thin Film Transistor Liquid Crystal Display) array base plate and manufacturing method thereof
11/17/2010CN101887896A Semiconductor chip and method of repair design of the same
11/17/2010CN101887895A Power transistor chip internally provided with enhancement metal-oxide-semiconductor field effect transistor (MOSFET) and applying circuit thereof
11/17/2010CN101887894A Static discharge protective device
11/17/2010CN101887893A Film transistor array substrate and manufacturing method thereof
11/17/2010CN101887892A Pixel structure and display panel comprising same
11/17/2010CN101887867A Method of fabricating organic light emitting diode display
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