Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
03/2012
03/01/2012US20120049178 Organic el display device and manufacturing method thereof
03/01/2012US20120049175 Organic el display panel, organic el display device having the same, and method for manufacturing organic el display panel
03/01/2012US20120049068 Wide spectral range hybrid image detector
03/01/2012US20120049046 Variable quantization adc for image sensors
03/01/2012US20120049045 Materials, systems and methods for optoelectronic devices
03/01/2012US20120049044 Solid-state imaging device, manufacturing method thereof, and electronic apparatus
03/01/2012US20120049043 Image sensor cell, image sensor including image sensor array including plurality of the image sensor cells, and camera system including the image sensor
03/01/2012US20120049042 Pixel Array, Read Out Circuit Therefor, Read Out Architecture Associated Therewith, Image Sensor And System Including The Same
03/01/2012US20120049041 Switched rail circuitry and modified cell structure and method of manufacture and use
03/01/2012DE19758977B4 Verfahren zur Herstellung eines Halbleiterbauelements A process for producing a semiconductor device
03/01/2012DE19727530B4 Herstellungsverfahren für ein Halbleiterbauelement mit einer SOI-Struktur und entsprechendes Halbleiterbauelement Manufacturing method of a semiconductor device with a SOI structure semiconductor device and corresponding
03/01/2012DE112004002491B4 Verfahren zur Herstellung einer kontaktlosen Speicheranordnung A process for preparing a non-contact memory device
03/01/2012DE10236217B4 Verfahren zur Herstellung einer Speicherzelle, Verfahren zur Herstellung einer vergrabenen Brücke (buried strap) für einen vertikalen DRAM ohne TTO Abscheidung sowie Verfahren zur Bearbeitung eines Halbleiterbauelements A method for fabricating a memory cell, method of manufacturing a buried strap (buried strap) for a vertical DRAM without TTO deposition and method for processing a semiconductor device
03/01/2012DE102011081589A1 Depletion-transistor und ladeanordnung Depletion transistor and upload arrangement
03/01/2012DE102011053000A1 Organische elektrolumineszente Vorrichtung An organic electroluminescent device
03/01/2012DE102011052731A1 Verfahren zum Bilden einer Halbleitervorrichtung und Halbleitervorrichtung mit einer integrierten Polydiode A method of forming a semiconductor device and semiconductor device comprising an integrated Polydiode
03/01/2012DE102011052471A1 Integrierte Schaltung mit Verbindungsebenen An integrated circuit interconnect levels
03/01/2012DE102011050958A1 Hochspannungshalbleiterbauelemente High voltage semiconductor devices
03/01/2012DE102011003280B3 Split-parallel successive approximation type analog-digital converter i.e. differential circuitry, for use in e.g. complementary metal oxide semiconductor image sensor, has comparator provided with two comparator inputs
03/01/2012DE102010062239A1 Electrical component e.g. MOSFET mounted in electrical circuit device, has secondary contact which is arranged between upper contact and primary contact, and arranged between lower contact and primary contact
03/01/2012DE102010040066A1 Gateelektroden eines Halbleiterbauelements, die durch eine Hartmaske und Doppelbelichtung in Verbindung mit einem Größenreduzierungsabstandshalter hergestellt sind Gate electrodes of a semiconductor device made by a hard mask and double exposure in connection with a reduction in size spacer
03/01/2012DE102010040064A1 Verringerte Schwellwertspannungs-Breitenabhängigkeit in Transistoren, die Metallgateelektrodenstrukturen mit großem ε aufweisen Have reduced threshold voltage width dependence in transistors, the metal gate electrode structures with large ε
03/01/2012DE102010040061A1 Erhöhte Ladungsträgerbeweglichkeit in p-Kanal Transistoren durch Vorsehen eines verspannungsinduzierenden schwellwerteinstellenden Halbleitermaterials im Kanal Increased charge carrier mobility in p-channel transistors by providing a stress-inducing schwellwerteinstellenden semiconductor material in the channel
03/01/2012DE102010040060A1 Oxidabscheidung unter Anwendung eines Doppelbeschichtungsverfahrens zur Verringerung der Strukturdichtenabhängigkeit in komplexen Halbleiterbauelementen Oxide deposition using a double coating procedure to reduce the structural sealant dependence in complex semiconductor devices
03/01/2012DE102010040058A1 Polysiliziumwiderstände, die in einem Halbleiterbauelement mit Metallgateelektrodenstrukturen mit großem ε hergestellt sind Polysilicon resistors which are produced in a semiconductor device with metal gate electrode structures with large ε
03/01/2012DE102009024212B4 Verfahren und Vorrichtung zur Vermeidung einer drohenden Verminderung der Einspeiseleistung einer Photovoltaikanlage sowie Verwendung einer Vorrichtung zur Durchführung des Verfahrens Method and apparatus for preventing an imminent reduce the energy of a photovoltaic system and using an apparatus for carrying out the method
03/01/2012DE102005031613B4 LED und LED-Array mit einer jeweiligen Kleberschicht LED and LED array with a respective adhesive layer
03/01/2012DE102004062202B4 Verfahren zum Herstellen einer Gate-Elektrode eines ersten Feldeffekttransistors und einer Gate-Elektrode eines zweiten Feldeffekttransistors und Verfahren zum Herstellen eines integrierten Schaltkreises A method of manufacturing a gate electrode of a first field effect transistor and a gate electrode of a second field effect transistor and method of fabricating an integrated circuit
03/01/2012DE102004030174B4 Magnetischer Direktzugriffsspeicher The magnetic random access memory
02/2012
02/29/2012EP2424334A1 Organic el display and method for manufacturing same
02/29/2012EP2423980A2 Integrated thin-film photovoltaic device and manufacturing method thereof
02/29/2012EP2423968A2 Anisotropic conductive layer as a back contact in thin film photovoltaic devices
02/29/2012EP2423964A1 Organic light emitting diode display
02/29/2012EP2423962A1 Long exposure digital image sensor system
02/29/2012EP2423961A1 Radiographic imaging device
02/29/2012EP2423960A2 Improved electroluminescent devices and displays with integrally fabricated address and logic devices fabricated by printing or weaving.
02/29/2012EP2423952A2 Patterning a gate stack of a non-volatile memory (nvm) with simultaneous etch in non-nvm area
02/29/2012EP2423776A1 Circuits, methods, sub-systems and systems including adaptive analog subtraction for light sensing
02/29/2012EP2423717A2 Uniform illumination system
02/29/2012EP2422593A2 Electronic structure
02/29/2012EP2422447A1 Electronic circuits including a mosfet and a dual-gate jfet
02/29/2012EP2422371A2 Non-radiatively pumped wavelength converter
02/29/2012EP2422370A1 Sensor systems and digital cameras
02/29/2012EP2422358A1 Method for fabricating an integrated-passives device with a mim capacitor and a high-accuracy resistor on top
02/29/2012EP1555694B1 Spin transistor using spin filter effect and nonvolatile memory using spin transistor
02/29/2012CN202153517U Organic electroluminescent display
02/29/2012CN1976028B ESD protection element
02/29/2012CN1933178B Semiconductor device
02/29/2012CN1759450B Programmable resistance memory device
02/29/2012CN1652465B Eased gate voltage restriction via body-bias voltage governor
02/29/2012CN102365828A Signal transmission communication unit and coupler
02/29/2012CN102365770A Electroluminescent device and segmented illumination device
02/29/2012CN102365750A Switchable junction with intrinsic diode
02/29/2012CN102365743A Back-illuminated solid-state image pickup device
02/29/2012CN102365742A 图像传感器 Image Sensor
02/29/2012CN102365741A Back-Illuminated Solid-State Image Pickup Device
02/29/2012CN102365740A Boosting transistor performance with non-rectangular channels
02/29/2012CN102364689A Floating gate structure of flash memory device and manufacturing method for floating gate structure
02/29/2012CN102364687A Electrostatic discharge (ESD) protection structure between silicon-on-insulator (SOI)/CMOS integrated circuit power supply and ground
02/29/2012CN102364681A Welding disc and silicon-on-insulator (SOI) device with same
02/29/2012CN102364568A Pixel cell circuit of AMOLED (active matrix/organic light emitting diode) and organic light-emitting display device
02/29/2012CN102364387A Liquid crystal display panel
02/29/2012CN102023433B TFT-LCD array substrate and method for manufacturing the same
02/29/2012CN102023430B Fringe field switching (FFS) type thin film transistor-liquid crystal display (TFT-LCD) array substrate and manufacturing method thereof
02/29/2012CN101893798B Display panel
02/29/2012CN101866882B Phase change memory capable of inhibiting crosscurrent between gating diodes and preparation method thereof
02/29/2012CN101846857B FFS (Fringe Field Switching) type TFT-LCD (Thin Film Transistor-Liquid Crystal Display) array substrate and manufacturing method thereof
02/29/2012CN101840935B SOI (Silicon-on-insulator) MOSFET lateral (metal-oxide-semiconductor field effect transistor) device
02/29/2012CN101814504B Metal structure for memory device and semiconductor device manufacture method
02/29/2012CN101807574B Groove type power MOS device and manufacturing method thereof
02/29/2012CN101796641B Channel strain engineering in field-effect-transistor
02/29/2012CN101788740B Thin film transistor array substrate
02/29/2012CN101771067B Magnetic memory and driving method as well as manufacturing method thereof
02/29/2012CN101752364B Array substrate for display device and method of fabricating the same
02/29/2012CN101740639B Manufacturing method of polycrystalline silicon electric resistance
02/29/2012CN101689601B Process for producing magnetic device, apparatus for producing magnetic device, and magnetic device
02/29/2012CN101685819B 半导体装置 Semiconductor device
02/29/2012CN101682700B Pixel array having wide dynamic range and good color reproduction and resolution and image sensor using the pixel array
02/29/2012CN101673017B Active component array substrate and manufacturing method thereof
02/29/2012CN101609839B Pixel and organic light emitting display device using the same
02/29/2012CN101577248B Array substrate and forming method thereof
02/29/2012CN101563779B Semiconductor photodetector and radiation detecting apparatus
02/29/2012CN101548409B Display apparatus and method of manufacturing the same
02/29/2012CN101540298B TFT-LCD array substrate and manufacturing method thereof
02/29/2012CN101533191B TFT-LCD array substrate structure and preparation method thereof
02/29/2012CN101467244B Low contact resistance cmos circuits and methods for their fabrication
02/29/2012CN101315928B Layout methods of integrated circuits having unit mos devices
02/29/2012CN101295680B Active-matrix substrate and method for producing the same, electrooptical device and method for producing the same, and electronic apparatus
02/29/2012CN101217153B An active member array structure and the corresponding manufacturing method
02/29/2012CN101208752B Nonvolatile memory cell comprising a diode and a resistance-switching material
02/29/2012CN101165903B Non-volatile memory devices including double diffused junction regions and methods of fabricating the same
02/28/2012USRE43215 ESD protection design with turn-on restraining method and structures
02/28/2012US8125830 Area-efficient electrically erasable programmable memory cell
02/28/2012US8125695 Imaging system and method
02/28/2012US8125636 Photodetector and spectrometer using the same
02/28/2012US8125553 Solid-state imaging device
02/28/2012US8125551 Solid-state image pickup device and control method thereof
02/28/2012US8125547 Driving method of solid-state imaging device, solid-state imaging device, and imaging apparatus including photoelectric conversion elements for luminance detection
02/28/2012US8125415 Display device
02/28/2012US8125261 Multi-power source semiconductor device
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