Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248) |
---|
01/18/1989 | EP0197991B1 Method for producing electronic circuits based on thin layers transistors and capacitors |
01/17/1989 | US4799109 Charge coupled sensor arrangement |
01/17/1989 | US4799108 Method of recording and storing images in rapid sequence |
01/17/1989 | US4799101 Substrate bias through polysilicon line |
01/17/1989 | US4799098 MOS/bipolar device with stepped buried layer under active regions |
01/17/1989 | US4799097 CMOS integrated devices in seeded islands |
01/17/1989 | US4799096 Monolithic integrated circuit comprising circuit branches parallel to one another |
01/17/1989 | US4799094 Semiconductor, lightly doped hydrogenated amorphous silicon |
01/17/1989 | US4799093 Semiconductor memory device having a mos transistor and superposed capacitor |
01/17/1989 | US4799092 Integrated circuit comprising complementary field effect transistors |
01/17/1989 | US4799091 Quantum device output switch |
01/17/1989 | US4799089 Semiconductor memory device |
01/17/1989 | US4799021 Method and apparatus for testing EPROM type semiconductor devices during burn-in |
01/17/1989 | US4798981 Input circuit |
01/17/1989 | US4798977 Word line driver for use in a semiconductor memory |
01/17/1989 | US4798974 Integrated circuit comprising a latch-up protection circuit in complementary MOS-circuitry technology |
01/17/1989 | US4798958 For storing/reading information in an imaging sensor |
01/17/1989 | US4798794 Method for manufacturing dynamic memory cell |
01/17/1989 | CA1249059A1 Charge transfer device |
01/17/1989 | CA1249013A1 Image detector for camera operating in "day-night" mode |
01/17/1989 | CA1248854A1 Epitaxial compositions |
01/11/1989 | EP0298851A1 Contacting process between two conducting layers deposited on a substrate |
01/11/1989 | EP0298829A1 Process to control the conduction state of a MOS transistor |
01/11/1989 | EP0298794A1 Process for making a buried insulating layer in a semiconductor substrate by ion implantation and semiconductor structure comprising such a layer |
01/11/1989 | EP0298576A1 A charge-coupled device |
01/11/1989 | EP0298574A1 Linear integrated resistor |
01/11/1989 | EP0298573A1 A charge-coupled device |
01/11/1989 | EP0298489A2 Semiconductor memory device having non-volatile memory transistors |
01/11/1989 | EP0298458A2 Image reading apparatus |
01/11/1989 | EP0298421A2 Semiconductor device having different impurity concentration wells |
01/11/1989 | EP0298344A2 A method for providing engineering changes to LSI PLAs |
01/11/1989 | EP0298251A2 High-density memory cell and process for manufacturing |
01/10/1989 | US4797890 Semiconductor light emitting device with vertical light emission |
01/10/1989 | US4797856 Self-limiting erase scheme for EEPROM |
01/10/1989 | US4797804 High density, high performance, single event upset immune data storage cell |
01/10/1989 | US4797785 Circuit arrangement and resonant label, and a process for its production |
01/10/1989 | US4797725 Memory cell for SRAM with a dielectric layer over a gate electrode to provide a parallel resistive and capacitive element |
01/10/1989 | US4797724 Reducing bipolar parasitic effects in IGFET devices |
01/10/1989 | US4797723 Stacked semiconductor device |
01/10/1989 | US4797719 MOS capacitor with direct polycrystalline contact to grooved substrate |
01/10/1989 | US4797717 Semiconductor memory device |
01/10/1989 | US4797571 Contact type image sensor |
01/10/1989 | US4797560 Matrix of photosensitive elements and an associated reading method in image formation |
01/10/1989 | US4797373 Method of making dRAM cell with trench capacitor |
01/10/1989 | US4797372 Method of making a merge bipolar and complementary metal oxide semiconductor transistor device |
01/10/1989 | US4797108 Method of manufacturing amorphous silicon field effect transistors |
01/10/1989 | CA1248597A1 Special interconnect for configurable logic array |
01/04/1989 | EP0297963A1 Method of connecting a lead to a doped region of an integrated circuit substrate by laser,and integrated circuit made by this method |
01/04/1989 | EP0297921A2 Photoelectric conversion device |
01/04/1989 | EP0297886A2 Heterojunction bipolar transistor |
01/04/1989 | EP0297821A2 Semiconductor integrated circuit device having gate array and memory |
01/04/1989 | EP0297798A2 A contact-type image sensor |
01/04/1989 | EP0297778A2 Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics |
01/04/1989 | EP0297777A2 Ferroelectric shadow ram |
01/04/1989 | EP0297654A1 Semiconductor device for producing electromagnetic radiation |
01/04/1989 | EP0297559A2 Photosensor |
01/04/1989 | EP0297508A2 Complementary heterostructure semiconductor device |
01/04/1989 | EP0297413A2 Photoelectric conversion device |
01/04/1989 | EP0297350A2 Static ram cell with trench pull-down transistors and buried-layer ground plate |
01/04/1989 | EP0162061B1 Fabrication of group iii-v compound semiconductor devices having high and low resistivity regions |
01/04/1989 | EP0162057B1 Method of fabricating algaas semiconductor devices having high and low resistivity regions |
01/04/1989 | CN1030144A Display device for use in the reflection mode |
01/03/1989 | USH569 Silicon substrate doped with oxygen-shields |
01/03/1989 | US4796174 Direct voltage multiplier capable of being integrated into a semiconducting structure |
01/03/1989 | US4796074 Method of fabricating a high density masked programmable read-only memory |
01/03/1989 | US4796072 Solid-state imaging device with potential barriers between pixels |
01/03/1989 | US4795964 Method and apparatus for measuring the capacitance of complementary field-effect transistor devices |
01/03/1989 | US4795721 Walled slot devices and method of making same |
01/03/1989 | US4795720 Method for producing semiconductor devices and cutting fuses |
01/03/1989 | US4795719 Self-aligned split gate eprom process |
01/03/1989 | US4795717 Multilayer-doping semiconductor before applying next layer |
01/03/1989 | US4795657 Method of fabricating a programmable array |
01/03/1989 | US4795500 Photovoltaic device |
01/03/1989 | CA1248231A1 High density memory |
12/29/1988 | WO1988010514A1 Stabilization of intraconnections and interfaces |
12/29/1988 | DE3720304A1 Structured semiconductor body |
12/28/1988 | EP0296997A1 Power mos transistors structure |
12/28/1988 | EP0296838A2 Monolithic microwave transmitter/receiver |
12/28/1988 | EP0296754A2 Method of manufacturing a semiconductor device having a trench isolation region, |
12/28/1988 | EP0296747A1 Integrated circuit with tub tie |
12/28/1988 | EP0296725A2 Photosensors |
12/28/1988 | EP0296681A1 Integrated circuit comprising an on-chip supply voltage reducer |
12/28/1988 | EP0296675A2 An integrated circuit with a protection device utilizing one or more subsurface diodes and associated method of manufacture |
12/28/1988 | EP0296658A1 Semiconductor device comprising a capacitor and a buried passivation layer |
12/28/1988 | EP0296603A2 Photoelectric converter |
12/28/1988 | EP0296586A1 Semiconductor memory device with improved cell arrangement |
12/28/1988 | EP0296371A1 Ultraviolet photodetector and production method |
12/28/1988 | CA1247754A Group iii-v semiconductor electrical contact |
12/27/1988 | US4794568 Redundancy circuit for use in a semiconductor memory device |
12/27/1988 | US4794565 Electrically programmable memory device employing source side injection |
12/27/1988 | US4794564 Nonvolatile semiconductor memory including means for detecting completion of writing operation |
12/27/1988 | US4794563 Semiconductor memory device having a high capacitance storage capacitor |
12/27/1988 | US4794562 Electrically-erasable/programmable nonvolatile semiconductor memory device |
12/27/1988 | US4794561 Static ram cell with trench pull-down transistors and buried-layer ground plate |
12/27/1988 | US4794443 Semiconductor device and process for producing same |
12/27/1988 | US4794442 Three-dimensional integrated circuit |
12/27/1988 | US4794434 Trench cell for a dram |
12/27/1988 | US4794433 Non-volatile semiconductor memory with non-uniform gate insulator |
12/27/1988 | US4794349 Fully differential, CMOS operational power amplifier |
12/27/1988 | US4794279 A solid state imaging device which applies two separate storage voltages for the signal charges so as to reduce the smear level and the dark current |