Patents
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
10/2003
10/21/2003US6635920 Non-volatile semiconductor memory device and manufacturing method thereof
10/21/2003US6635919 High Q-large tuning range micro-electro mechanical system (MEMS) varactor for broadband applications
10/21/2003US6635918 Semiconductor integrated circuit device and method for manufacturing the same
10/21/2003US6635917 Semiconductor processing methods of forming a plurality of capacitors on a substrate, bit line contacts and method of forming bit line contacts
10/21/2003US6635916 On-chip capacitor
10/21/2003US6635915 Semiconductor device having trench capacitor formed in SOI substrate
10/21/2003US6635914 Microelectronic programmable device and methods of forming and programming the same
10/21/2003US6635912 CMOS image sensor and manufacturing method thereof
10/21/2003US6635911 Solid state image sensing device
10/21/2003US6635908 Burying type avalanche photodiode and fabrication method thereof
10/21/2003US6635901 Semiconductor device including an InGaAIN layer
10/21/2003US6635860 Radiation detector
10/21/2003US6635858 Imaging device with an illumination source having an inverted radiation profile and a method of imaging
10/21/2003US6635561 Semiconductor device, and method of manufacturing the semiconductor device
10/21/2003US6635552 Methods of forming semiconductor constructions
10/21/2003US6635550 Semiconductor on insulator device architecture and method of construction
10/21/2003US6635548 Capacitor and method for forming same
10/21/2003US6635547 DRAM capacitor formulation using a double-sided electrode
10/21/2003US6635546 Method and manufacturing MRAM offset cells in a damascene structure
10/21/2003US6635544 Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
10/21/2003US6635543 SOI hybrid structure with selective epitaxial growth of silicon
10/21/2003US6635542 Compact body for silicon-on-insulator transistors requiring no additional layout area
10/21/2003US6635539 Method for fabricating a MOS transistor using a self-aligned silicide technique
10/21/2003US6635538 Method of manufacturing a semiconductor device
10/21/2003US6635536 Method for manufacturing semiconductor memory device
10/21/2003US6635533 Method of fabricating flash memory
10/21/2003US6635532 Method for fabricating NOR type flash memory device
10/21/2003US6635531 Method of manufacturing non-volatile semiconductor memory device
10/21/2003US6635529 Method of fabricating semiconductor device
10/21/2003US6635528 Method of planarizing a conductive plug situated under a ferroelectric capacitor
10/21/2003US6635527 Metal-insulator-metal capacitor
10/21/2003US6635526 Structure and method for dual work function logic devices in vertical DRAM process
10/21/2003US6635525 Method of making backside buried strap for SOI DRAM trench capacitor
10/21/2003US6635524 Method for fabricating capacitor of semiconductor memory device
10/21/2003US6635522 Method of forming a MOS transistor in a semiconductor device and a MOS transistor fabricated thereby
10/21/2003US6635521 CMOS-type semiconductor device and method of fabricating the same
10/21/2003US6635520 Operation method of semiconductor devices
10/21/2003US6635518 SOI FET and method for creating FET body connections with high-quality matching characteristics and no area penalty for partially depleted SOI technologies
10/21/2003US6635515 Method of manufacturing a semiconductor device having signal line above main ground or main VDD line
10/21/2003US6635508 Organic semiconductor device and process of manufacturing the same
10/21/2003US6635507 Monolithic bypass-diode and solar-cell string assembly
10/21/2003US6635504 Method of manufacturing organic EL display
10/21/2003US6635503 Cluster packaging of light emitting diodes
10/21/2003US6635499 MRAM sense layer isolation
10/21/2003US6635497 Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing
10/21/2003US6635496 Plate-through hard mask for MRAM devices
10/21/2003US6635495 Infrared detecting element, infrared two-dimensional image sensor, and method of manufacturing the same
10/21/2003US6635494 Method of forming a two-dimensionally arrayed quantum device using a metalloprotein complex as a quantum-dot mask array
10/21/2003US6635310 Semiconductors, doping with PH3
10/21/2003CA2368989C Improvements in, or relating to, infra-red detection
10/16/2003WO2003086025A1 Rgb patterning of organic light-emitting devices using photo-bleachable emitters dispersed in a common host
10/16/2003WO2003086024A1 Method for manufacturing electroluminescent device
10/16/2003WO2003086023A1 Integrated led drive electronics on silicon-on-insulator integrated circuits
10/16/2003WO2003086022A1 Organic electroluminescent display element, display and method for manufacturing them
10/16/2003WO2003085774A1 Sensitizing dye solar cell
10/16/2003WO2003085752A2 Molehole embedded 3-d crossbar architecture used in electrochemical molecular memory device
10/16/2003WO2003085750A1 Magnetoresistance effect element and magnetic memory device
10/16/2003WO2003085741A1 Non-volatile flip-flop
10/16/2003WO2003085740A1 Non-volatile memory and manufacturing method thereof
10/16/2003WO2003085734A1 Interconnection structure and methods
10/16/2003WO2003085706A1 Manufacturing method and apparatus to avoid prototype-hold in asic/soc manufacturing
10/16/2003WO2003085675A2 Phase-change memory device
10/16/2003WO2003085674A2 Synthetic-ferrimagnet sense-layer for high density mram applications
10/16/2003WO2003085672A1 Memory chip architecture having non-rectangular memory banks and method for arranging memory banks
10/16/2003WO2003085413A2 Three dimensional image sensing device using intensity modulated light
10/16/2003WO2003085410A1 Method and arrangement for protecting a chip and checking its authenticity
10/16/2003WO2003067639A3 Method for producing a memory cell
10/16/2003WO2003060996A3 Adaptive threshold voltage control with positive body bias for n and p-channel transistors
10/16/2003WO2003032957A3 Methods for hermetically sealing microchip reservoir devices
10/16/2003WO2003019623A3 Trench dmos transistor with embedded trench schottky rectifier
10/16/2003WO2003005450A9 Nanoscale wires and related devices
10/16/2003WO2002097890A3 Bitline contacts in a memory cell array
10/16/2003WO2002095832A3 Applications for and tunneling device
10/16/2003WO2002095794A3 Semiconductor memory device and method for the production thereof
10/16/2003WO2002095586A3 Hierarchical built-in self-test for system-on-chip design
10/16/2003WO2002086973A3 Nanoelectronic devices and circuits
10/16/2003WO2002078102A3 Fabricating a molecular electronic device having a protective barrier layer
10/16/2003WO2002073680A3 Method of making layered superlattice material with ultra-thin top layer
10/16/2003WO2002067302A3 Rhodium-rich oxygen barriers
10/16/2003WO2002029903A3 Silicon-on-insulator (soi) trench photodiode and method of forming same
10/16/2003US20030196140 Semiconductor integrated circuit
10/16/2003US20030194978 System and method for coarse/fine PLL adjustment
10/16/2003US20030194952 Method for planarizing a dielectric layer of a flash memory device
10/16/2003US20030194867 Etch process for recessing polysilicon in trench structures
10/16/2003US20030194865 Method of manufacture of programmable conductor memory
10/16/2003US20030194846 Medium dose simox over a wide BOX thickness range by a multiple implant, multiple anneal process
10/16/2003US20030194841 Method for manufacturing semiconductor device
10/16/2003US20030194840 Method of manufacturing semiconductor device with reduced number of process steps for capacitor formation
10/16/2003US20030194839 Polycrystalline silicon thin film transistor and method for fabricating the same
10/16/2003US20030194838 Transistor and associated driving device
10/16/2003US20030194825 Deposition of gate metallization for active matrix liquid crystal display (AMLCD) applications
10/16/2003US20030194819 Semiconductor constructions and methods of forming semiconductor constructions
10/16/2003US20030194630 Bistable molecules that undergo redox reactions, such as rotaxanes and catenanes, or that undergo an electric field induced band gap change that causes the molecules to change from a fully conjugated to a less conjugated state
10/16/2003US20030194509 Reacting a doped surface layer to form a dielectric film, a metal film or a silicide film having a thickness of 50 angstroms or less.
10/16/2003US20030194484 Improved using efficiency of an EL material; excels in uniformity and throughput.
10/16/2003US20030193827 Two-bit programmable nonvolatile memory device and methods of operating and fabricating the same
10/16/2003US20030193824 Semiconductor memory device
10/16/2003US20030193823 Semiconductor memory device provided with test memory cell unit
10/16/2003US20030193796 Light-emitting devices
10/16/2003US20030193792 Layout structure of electrode lead wires for organic led display