Patents
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
01/2006
01/19/2006US20060011807 Simple/cascode configurable current source for image sensor
01/19/2006US20060011806 Method and sensor for determining the local contrast of an observed scene by detection of the luminance from said scene
01/19/2006DE4238404B4 Verfahren zur Herstellung einer Halbleiterspeichervorrichtung A method of manufacturing a semiconductor memory device
01/19/2006DE3900426B4 Verfahren zum Betreiben einer Halbleiteranordnung A method of operating a semiconductor device
01/19/2006DE112004000248T5 UV-Abblockschicht zum Reduzieren der UV-Induzierten Aufladung von SONOS-Doppelbit-Flash-Speicher-Einrichtungen in der Beol-Bearbeitung UV Abblockschicht for reducing UV-induced charging of SONOS dual bit flash memory devices in the Beol processing
01/19/2006DE10328577B4 Nichtflüchtige Speicherzelle und Herstellungsverfahren A non-volatile memory cell, and manufacturing method
01/19/2006DE10326578B4 Verfahren zur Herstellung einer SOI-Scheibe A process for producing an SOI wafer
01/19/2006DE102005027234A1 Verbindungsstrukturen für Halbleitervorrichtungen und Verfahren zum Bilden derselben Connecting structures for semiconductor devices and method of forming same
01/19/2006DE102004051361A1 Verfahren und System zum hermetischen Abdichten von Packungen für optische Bauelemente Method and system for hermetic sealing of packings for optical components
01/19/2006DE102004031742A1 Production of a sub-lithographic contact structure of a memory cell in a semiconductor component comprises preparing a front-end-of-line semiconductor wafer with an electrical contact, depositing an insulating layer and further processing
01/19/2006DE102004031606A1 Integrierte Schaltungsanordnung mit pin-Diode und Herstellungsverfahren Integrated circuit arrangement with pin diode and manufacturing processes
01/19/2006DE102004031385A1 Verfahren zur Herstellung einer DRAM-Speicherzellenanordnung mit Stegfeldeffekttransistoren und DRAM-Speicherzellenanordnung mit CFETs A method of manufacturing a DRAM memory cell array having fin field effect transistors and DRAM memory cell array with CFETS
01/19/2006DE102004031135A1 Resistives Halbleiterelement basierend auf einem Festkörperionenleiter The resistive semiconductor element based on a solid ionic conductors
01/19/2006DE102004031119A1 Production of a layer arrangement comprises structuring a semiconductor layer on a first electrically insulating layer using a hard mask formed on part of the semiconductor layer and further processing
01/19/2006DE102004031112A1 Electronic circuit for chips for adjusting the node points of a circuit to give a given potential different from a reference node has series switches to give an adjustable voltage drop
01/19/2006DE102004030813A1 Verfahren zur Verbindung einer integrierten Schaltung mit einem Substrat und entsprechende Schaltungsanordnung A method for bonding an integrated circuit having a substrate and corresponding circuit arrangement
01/19/2006DE102004026003B3 Resistive Speicherzellen-Anordnung Resistive memory cell array
01/19/2006DE102004007410B4 Verfahren zum Herstellen einer Speicherzelle A method for fabricating a memory cell
01/19/2006CA2572904A1 Imaging pickup device, integrated circuit of image pickup element, and image pickup result processing method
01/19/2006CA2572806A1 Imaging apparatus, integrated circuit for image pickup device and image data processing method
01/18/2006EP1617655A1 Imaging device and mobile terminal using this imaging device
01/18/2006EP1617481A2 Electronic structure of an electronic device, thin film transistor structure and flat panel display having the same
01/18/2006EP1617480A2 Solid-state image sensor
01/18/2006EP1617479A2 Solid-state image sensor and method for fabricating the same
01/18/2006EP1617478A1 Magnetic memory device and magnetic memory device write method
01/18/2006EP1617477A1 Lateral bipolar cmos integrated circuit
01/18/2006EP1617476A2 Vertical integration in power integrated circuits
01/18/2006EP1617475A1 Semiconductor device
01/18/2006EP1616435A2 Improved imager light shield
01/18/2006EP1616434A1 Photoelectric conversion device and radiation photography apparatus
01/18/2006EP1616360A2 Electrical charge storage device having enhanced power characteristics
01/18/2006EP1616354A1 Generating intra-particle crystallographic parameter maps and histograms of a chemically pure crystalline particulate substance
01/18/2006EP1616160A1 Integrated spectroscopic microbolometer with microfilter arrays
01/18/2006EP1169731A4 Semiconductor device having a self-aligned contact structure and methods of forming the same
01/18/2006EP1034564B1 Process for fabricating semiconductor device including antireflective etch stop layer
01/18/2006CN2752961Y Semiconductor device with capacitor and fusing layer
01/18/2006CN1723601A Integrated half-bridge power circuit
01/18/2006CN1723572A CMOS image sensor
01/18/2006CN1723566A Wiring substrate and radiation detector using same
01/18/2006CN1723565A Wiring substrate and radiation detector using same
01/18/2006CN1723564A Imaging device and imaging method
01/18/2006CN1723563A SOI wafer and production method therefor
01/18/2006CN1723562A Semiconductor device having ferroelectric film and manufacturing method thereof
01/18/2006CN1723561A Integrated circuit power switch circuit sizing and placement technique
01/18/2006CN1723560A Semiconductor component with a bipolar lateral power transistor
01/18/2006CN1723555A Semiconductor memory having charge trapping memory cells and fabrication method
01/18/2006CN1723550A C implants for improved SiGe bipolar yield
01/18/2006CN1723482A 发光装置及其制作方法 Light-emitting device and manufacturing method thereof
01/18/2006CN1722924A Electroluminescence display device
01/18/2006CN1722923A Optical substrate, light emitting element, display device and manufacturing methods thereof
01/18/2006CN1722922A Electroluminescent device and method for manufacturing same
01/18/2006CN1722919A Luminescence unit, luminescence device with luminescence unit, and method for manufacturing luminescence cell
01/18/2006CN1722917A Organic electroluminescence device and fabrication method thereof
01/18/2006CN1722784A Image pickup device and camera module
01/18/2006CN1722734A A method for automatic configuration of terminal equipment
01/18/2006CN1722488A Thin film phase-change memory
01/18/2006CN1722475A Method for manufacturing solar battery
01/18/2006CN1722474A Photovoltaic cell, photovoltaic cell module, method of fabricating photovoltaic cell and method of repairing photovoltaic cell
01/18/2006CN1722471A Semiconductor integrated circuit
01/18/2006CN1722468A Portable information terminal
01/18/2006CN1722466A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
01/18/2006CN1722462A Phase-change memory unit combined by reversible phase-change resistance and transistor and preparing method thereof
01/18/2006CN1722459A Image sensor having a passivation layer exposing at least a main pixel array region and methods of fabricating the same
01/18/2006CN1722458A Solid state image pickup device
01/18/2006CN1722457A Active pixel cell using asymmetric transfer transistor
01/18/2006CN1722456A Image sensor package and method of manufacturing the same
01/18/2006CN1722455A Solid-state image sensor
01/18/2006CN1722454A Solid-state image sensor and method for fabricating the same
01/18/2006CN1722453A Electronic imaging apparatus
01/18/2006CN1722452A Thin film transistor array substrate, display using the same, and fabrication method thereof
01/18/2006CN1722451A Method of manufacturing displays and apparatus for manufacturing displays
01/18/2006CN1722450A Thin film semiconductor device, electrolight device and intermediate mask
01/18/2006CN1722449A Substrate for semiconductor device, method of manufacturing substrate for semiconductor device, and use
01/18/2006CN1722448A Thin film integrated circuit and method for manufacturing the same, CPU, memory, electronic card and electronic device
01/18/2006CN1722447A Nonvolatile semiconductor memory device and method of manufacturing the same
01/18/2006CN1722446A Methods of forming split-gate non-volatile memory cells including raised oxide layers on field oxide regions and split-gate non-volatile memory cells so formed
01/18/2006CN1722445A Charge trapping non-volatile memory and method for operating same
01/18/2006CN1722444A Charge trapping non-volatile memory and method for gate-by-gate erase for same
01/18/2006CN1722443A Semiconductor memory device and method of arranging signal and power lines thereof
01/18/2006CN1722442A Nonvolatile semiconductor memory device and method of manufacturing the same
01/18/2006CN1722441A Memory circuit, dynamic and static ram circuit module
01/18/2006CN1722440A Semiconductor device having hierarchized bit lines
01/18/2006CN1722439A CMOS logic lock with spathic direction and its forming method
01/18/2006CN1722438A Low leakage monotonic CMOS logic
01/18/2006CN1722437A Integrated circuit devices including a dual gate stack structure and methods of forming the same
01/18/2006CN1722436A Semiconductor device
01/18/2006CN1722435A Semiconductor device and manufacturing method thereof
01/18/2006CN1722434A Output circuit
01/18/2006CN1722433A Semiconductor device and method for manufacturing the same
01/18/2006CN1722432A Multi-mode integrated circuit devices including mode detection and methods of operating the same
01/18/2006CN1722425A Semiconductor structure
01/18/2006CN1722413A Optical electronic apparatus and method for producing the same
01/18/2006CN1722411A Semiconductor memory device and manufacturing method thereof
01/18/2006CN1722410A Method of manufacturing flash memory device
01/18/2006CN1722384A Method of forming capacitor of semiconductor device
01/18/2006CN1722382A Nanodots formed on silicon oxide and method of manufacturing the same
01/18/2006CN1722379A Methods of forming metal-insulator-metal (MIM) capacitors with separate seed and main dielectric layers and mim capacitors so formed
01/18/2006CN1722378A Method for forming passivation film of semiconductor device and structure of passivation film of semiconductor device
01/18/2006CN1722364A Trench structure having a void and inductor including the trench structure
01/18/2006CN1722363A Method for manufacturing strain silicon mixing underlay and silicon mixing underlay