Patents
Patents for H01L 27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (229,248)
08/2006
08/17/2006US20060179916 Frequency characteristics measuring method and device for acceleration sensor
08/17/2006DE10301496B4 Halbleiteranordnung mit p- und n-Kanal-Transistoren sowie Verfahren zu deren Herstellung A semiconductor device having p- and n-channel transistors as well as processes for their preparation
08/17/2006DE102006005875A1 Epitaxial semiconductor substrate manufacturing method involves forming epitaxial layer over gettering layer
08/17/2006DE102006000613A1 DRAM mit High-K-Dielektrikum-Speicherkondensator und Verfahren zum Herstellen desselben DRAM of the same with high-K dielectric storage capacitor and methods for producing
08/17/2006DE102005063116A1 CMOS-Bildsensor und Herstellungsverfahren desselben Of the same CMOS image sensor and production method
08/17/2006DE102005063114A1 CMOS-Bildsensor und Herstellungsverfahren desselben Of the same CMOS image sensor and production method
08/17/2006DE102005056703A1 TFT-Arraysubstrat und zugehöriges Herstellverfahren TFT array substrate manufacturing process and related
08/17/2006DE102005005938A1 Resistives Speicherelement mit verkürzter Löschzeit Resistive memory element with a shorter erase time
08/17/2006DE102005005325A1 Resistively switching non-volatile memory cell e.g. non-volatile conductive bridging random access memory cell, manufacturing method, involves operating inert gas plasma in sputtering mode to produce silver/copper diffusion
08/17/2006DE102005004108A1 Semiconductor circuit, for dynamic semiconductor memory, has enamel unit and photo unit, where connections of enamel and photo unit are connected in series and current flowing through series connection is determined
08/17/2006DE102004062214B4 Halbleitervorrichtung mit Temperaturerfassungsfunktion A semiconductor device comprising temperature detection function
08/17/2006DE102004025974B4 Programmierbares Speicherbauelement, integrierter Schaltkreis und Verfahren zur Herstellung desselben Programmable memory device, integrated circuit and methods for manufacturing the same
08/17/2006CA2590200A1 Electric circuit, use of a semiconductor component and method for manufacturing a semiconductor component
08/16/2006EP1691422A1 Semiconductor radiation detector and process for producing the same
08/16/2006EP1691420A1 Schottky diode and fabrication method therefor
08/16/2006EP1691418A1 Image sensor using deep trench isolation
08/16/2006EP1691417A1 Salicide process using CMP for image sensor
08/16/2006EP1691416A1 Salicide process for image sensor
08/16/2006EP1691415A1 Semiconductor device with implanted passive elements
08/16/2006EP1691413A1 Tamper-resistant electronic component
08/16/2006EP1691407A1 Integrated circuit having a Schottky diode with a self-aligned floating guard ring and method for fabricating such a diode
08/16/2006EP1691340A1 Thin film transistor integrated circuit device, active matrix display device, and manufacturing method of the same
08/16/2006EP1691227A1 Device including an automatic focus camera module and corresponding method of assembly
08/16/2006EP1690300A2 Semiconductor light emitting device, lighting module, lighting apparatus, and manufacturing method of semiconductor light emitting device
08/16/2006EP1690298A1 Photodetector comprising a monolithically integrated transimpedance amplifier and evaluation electronics, and production method
08/16/2006EP1690294A2 Method of fabricating a finfet
08/16/2006EP1690290A1 Gan-based permeable base transistor and method of fabrication
08/16/2006EP1623463A4 Mram architecture with a bit line located underneath the magnetic tunneling junction device
08/16/2006EP1433182B1 Selective operation of a multi-state non-volatile memory system in a binary mode
08/16/2006EP1351379B1 High-frequency semiconductor device
08/16/2006EP1323290A4 Company active pixel with low-noise snapshot image formation
08/16/2006EP1138044B1 Capacitive sensing array devices
08/16/2006EP1046049B1 Device comprising a first and a second ferromagnetic layer separated by a non-magnetic spacer layer
08/16/2006EP0958613B1 Semiconductor component for high voltage
08/16/2006EP0946980B1 Improved integrated circuit structures and methods to facilitate accurate measurement of the ic devices
08/16/2006CN2807482Y High speed photoelectric detector table-board type chip
08/16/2006CN1820553A Organic LCD, and manufacture thereof, display device and illuminator
08/16/2006CN1820552A Light-emitting element and light-emitting device
08/16/2006CN1820498A Photosensitive part and solid-state image pickup device
08/16/2006CN1820375A Self-aligned conductive lines for FET-based magnetic random access memory devices and method of forming it
08/16/2006CN1820374A Semiconductor device
08/16/2006CN1820371A Encapsulation structure for display devices
08/16/2006CN1820370A Manufacturing method of semiconductor device, semiconductor manufacturing apparatus, computer recording medium
08/16/2006CN1820359A Planar magnetic tunnel junction substrate having recessed alignment marks
08/16/2006CN1820349A An image sensor with a vertical overflow drain and short micro-lens to silicon distance
08/16/2006CN1820325A Polymer memory device formed in via opening
08/16/2006CN1820324A Semiconductor integrated circuit
08/16/2006CN1820296A Electric device and method for driving an organic diode in a light sensing state
08/16/2006CN1819630A CMOS active pixel sensor and active pixel sensor array
08/16/2006CN1819302A Light-emitting device, method for manufacturing light-emitting device, and electronic apparatus
08/16/2006CN1819299A Thin film transistors, flat panel display including the thin film transistor and method for manufacturing the thin film transistor and the flat panel display
08/16/2006CN1819297A Side wall active pin memory and manufacturing method
08/16/2006CN1819295A Memory cell and method of forming same, memory cell array and operating method thereof
08/16/2006CN1819284A LED and production thereof
08/16/2006CN1819277A Image sensor and pixel having a polysilicon layer over the photodiode
08/16/2006CN1819272A Semiconductor device and method of manufacturing same
08/16/2006CN1819271A Soi device, crystal plate and method for forming same
08/16/2006CN1819266A High voltage operating field effect transistor, bias circuit therefor and high voltage circuit thereof
08/16/2006CN1819265A Semiconductor device and method of manufacturing semiconductor device
08/16/2006CN1819258A Authenticated device and individual authentication system
08/16/2006CN1819257A Organic electroluminescent device and method for manufacturing the same
08/16/2006CN1819256A 相变存储器装置 Phase change memory device
08/16/2006CN1819255A Micro-led based high voltage ac/dc indicator lamp
08/16/2006CN1819254A LED chip
08/16/2006CN1819253A Solid-state imaging device and manufacturing method for the same
08/16/2006CN1819252A Solid-state image pickup device and method for producing the same
08/16/2006CN1819251A Solid-state imaging device and method of manufacturing the same
08/16/2006CN1819250A CMOS image sensor and method for fabricating the same
08/16/2006CN1819249A Image sensor having square microlens
08/16/2006CN1819248A CMOS image sensor and method for fabricating the same
08/16/2006CN1819247A CMOS image sensor and fabricating method thereof
08/16/2006CN1819246A CMOS image sensor and method for manufacturing the same
08/16/2006CN1819245A CMOS image sensor and fabricating method thereof
08/16/2006CN1819244A CMOS image sensor and method for manufacturing the same
08/16/2006CN1819243A Image sensor having inner lens
08/16/2006CN1819242A CMOS image sensor and method for fabricating the same
08/16/2006CN1819241A CMOS image sensor and method for fabricating the same
08/16/2006CN1819240A CMOS image sensor and method for fabricating the same
08/16/2006CN1819239A Photodiode of cmos image sensor and method for manufacturing the same
08/16/2006CN1819238A Image sensor pixel having a transfer gate formed from Pp+ or N+ doped polysilicon
08/16/2006CN1819237A CMOS image sensor and method for fabricating the same
08/16/2006CN1819236A Method for fabricating vertical CMOS image sensor
08/16/2006CN1819235A CMOS image sensor and method for fabricating the same
08/16/2006CN1819234A CMOS image sensor and method of fabricating the same
08/16/2006CN1819233A CMOS image sensor and method for manufacturing the same
08/16/2006CN1819232A CMOS image sensor and method for fabricating the same
08/16/2006CN1819231A Cmos图像传感器 Cmos image sensor
08/16/2006CN1819230A Solid-state image sensor, method of manufacturing the same, and camera
08/16/2006CN1819229A CMOS image sensor and method for manufacturing the same
08/16/2006CN1819228A CMOS image sensor and method for fabricating the same
08/16/2006CN1819227A CMOS image sensor and method for fabricating the same
08/16/2006CN1819226A CMOS image sensor and method for fabricating the same
08/16/2006CN1819225A CMOS image sensor and method for fabricating the same
08/16/2006CN1819224A Photodiode in CMOS image sensor and fabricating method thereof
08/16/2006CN1819223A Color filter array in CMOS image sensor
08/16/2006CN1819222A CMOS image sensor and method for manufacturing the same
08/16/2006CN1819221A CMOS image sensor and method for fabricating the same
08/16/2006CN1819220A CMOS image sensor and method for fabricating the same
08/16/2006CN1819219A Tft substrate and manufacturing method of the same
08/16/2006CN1819218A Semiconductor device and manufacturing method thereof