Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
10/2008
10/16/2008US20080255006 Using layered, high moment, superparamagnetic or antiferromagnetic nanoparticles for high-sensitivity detection of nucleic acid molecules
10/15/2008EP1981042A1 Inductive devices with granular magnetic materials
10/14/2008US7435489 Magnetic recording medium, magnetic storage apparatus and recording method
10/08/2008CN100424753C Magnetoresistive structures
10/07/2008US7433161 Spin-valve element having fixed layer containing nano-oxide layer
10/07/2008US7433153 Soft magnetic film and thin film magnetic head using soft magnetic film, process for manufacturing soft magnetic film and process for manufacturing thin film magnetic head
10/07/2008US7432792 High frequency thin film electrical circuit element
10/07/2008US7432573 Surface-spintronics device
10/07/2008US7431999 Perpendicular magnetic recording medium and magnetic recording/reproducing apparatus
10/02/2008WO2008117354A1 Magnetoresistance effect device and, equipped therewith, magnetic head, magnetic recording apparatus and magnetic memory unit
10/02/2008US20080241596 Magnetoresistive Multilayer Film
10/02/2008US20080238602 Components with on-die magnetic cores
10/01/2008EP1975269A1 Austenitic iron-nickel-chromium-copper alloy
10/01/2008CN101276879A Double freedom layer vertical ferromagnetism tunnel junction structure
09/2008
09/25/2008WO2008114611A1 Magnetic alloy, amorphous alloy ribbon, and magnetic part
09/25/2008WO2008114605A1 Soft magnetic ribbon, magnetic core, magnetic part and process for producing soft magnetic ribbon
09/25/2008US20080230819 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plan equilibrium magnetization
09/24/2008EP1973178A2 Magnetoresistance effect device and method of production of the same
09/24/2008CN101271958A Magnetoresistance effect device, magnetic lamination structural body, and manufacture method for magnetic lamination structural body
09/24/2008CN100421155C Perpendicular magnetic recording medium and magnetic recording/reproducing apparatus
09/23/2008US7428128 High read output, high sensitivity magnetic sensing element
09/18/2008WO2008017186A3 Anisotropic magnetic elements for spintronic devices
09/17/2008CN101266831A Memory device and memory
09/17/2008CN100419902C Synthetic ferromagnet reference layer for magnetic storage device
09/17/2008CN100419856C Magnetic multilayered films with reduced magnetostriction
09/16/2008US7426098 Magnetoresistive element having three-layer buffer layer, magnetic head, magnetic reproducing apparatus, and magnetic memory
09/16/2008US7426097 Giant magnetoresistive device with buffer-oxide layer between seed and ferromagnetic layers to provide smooth interfaces
09/16/2008US7426096 Magnetoresistive effective element with high output stability and reduced read bleeding at track edges
09/16/2008US7425456 Antiferromagnetic stabilized storage layers in GMRAM storage devices
09/10/2008EP1968130A2 A novel SyAF structure to fabricate Mbit MTJ MRAM
09/10/2008EP1117136B1 Ferromagnetic double quantum well tunneling magnetoresistance device
09/10/2008CN100418137C Perpendicular magnetic recording medium, manufacturing process of the same, and magnetic recording/reproducing apparatus using the same
09/09/2008US7423851 Magneto-resistive element and device being provided with magneto-resistive element having magnetic nano-contact
09/09/2008US7423848 Process and structure to fabricate CPP spin valve heads for ultra-high recording density
09/02/2008US7420839 Magnetization reversal method for applying a multi-directional external magnetic field to a perpendicular magnetoresistive film
09/02/2008US7418777 Method on manufacturing spin valve film
08/2008
08/28/2008WO2008101545A1 Spin-transfer torque oscillator
08/28/2008WO2007120683A3 Security image coated with a single coating having visualy distinct regions
08/28/2008US20080202917 Method for Manufacturing a Magnetoresistive Multilayer Film
08/27/2008CN101252166A Magnetoresistive device, magnetic head, magnetic storage apparatus, and magnetic memory
08/27/2008CN101252037A Magnetic thin film and magnetoresistance effect element
08/27/2008CN100414610C Perpendicular magnetic recording medium using soft magnetic layer which suppresses noise generation, and perpendicular magnetic recording apparatus therewith
08/27/2008CN100414297C Particles
08/26/2008US7417269 Magnetic impedance device, sensor apparatus using the same and method for manufacturing the same
08/21/2008WO2008099626A1 Magnetoresistance effect element and magnetic random access memory
08/20/2008EP1614126B1 Low switching field magnetic element
08/20/2008EP1435091A4 Magnetic material structures, devices and methods
08/19/2008US7414881 Magnetization direction control method and application thereof to MRAM
08/13/2008EP1658614B1 Magnetic memory element utilizing spin transfer switching and storing multiple bits
08/13/2008CN100411070C Magnetic metal particle aggregate and method of producing the same
08/12/2008US7411565 Artificial magnetic conductor surfaces loaded with ferrite-based artificial magnetic materials
08/07/2008US20080187472 Magnetic bead-based arrays
08/06/2008CN101237023A Tunnel magnetoresistance effect film and magnetic device
08/06/2008CN101235457A N2O doping p-type Zn1-xCoxO diluted magnetic semi-conductor thin film and preparation method thereof
08/06/2008CN100409382C Method for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory location device
08/06/2008CN100409379C Crystal size-controllable polycrystalline Fe3O4 thin-film material and its preparation method
08/06/2008CN100409319C Perpendicular magnetic recording medium, manufacturing method therefor, and magnetic read/write apparatus using the same
08/06/2008CN100409311C Magnetic read head with hard bias magnet structure
08/05/2008US7408748 Side reading reduced GMR for high track density
07/2008
07/31/2008WO2008090305A1 Magnetic structure with multiple-bit storage capabilities
07/30/2008EP1950256A1 Flake for covert security applications
07/30/2008EP1949466A1 A magnetoresistive tunnel junction magnetic device and its application to mram
07/30/2008CN101232073A Magnetoresistive element and magnetic memory
07/30/2008CN100407342C 高频用磁性薄膜、复合磁性薄膜和利用这些磁性薄膜的磁性元件 The high-frequency magnetic thin film, the composite magnetic film and the use of these magnetic thin film magnetic element
07/24/2008WO2008087345A2 Multilayer magnetic device, process for the production thereof, magnetic field sensor, magnetic memory and logic gate using such a device
07/24/2008WO2008087207A2 Anisotropic magnetic elements for spintronic devices
07/24/2008US20080176008 Apparatus and method for forming magnetic film
07/23/2008CN101226811A Water-based casting film-forming preparation technique for Mn-Zn ferrite
07/23/2008CN100405462C Magnetoresistive element, magnetoresistive head, magnetic recording apparatus, and magnetic memory
07/23/2008CN100404722C Method of modifying iron based glasses to increase crytallization temperature without changing melting temperature
07/22/2008US7402833 Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabrication
07/22/2008US7402349 Thick film composition yielding magnetic properties
07/22/2008CA2423829C Retention device for rods and the like
07/16/2008EP1943727A2 Radio-frequency oscillator with spin-polarised electric current
07/16/2008CN101222018A Magnetoresistive element
07/16/2008CN101222017A Magnetoresistive element
07/16/2008CN101221849A Magnetic multilayer film with geometrical shape and preparation method and application thereof
07/15/2008US7400143 Magnetic bias film and magnetic sensor using the same
07/09/2008EP1941291A1 Magnetic permeability measuring method and a reference sample used therefor
07/09/2008CN101217181A Magnetic domain data storage devices and methods of manufacturing the same
07/09/2008CN100401433C Preparation method and use of polycrystalline FeO thin-film materials
07/03/2008US20080160333 Ferromagnetic or Ferrimagnetic Layer, Method for the Production Thereof, and Use Thereof
07/03/2008US20080158737 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
07/03/2008US20080156261 Method for producing nanoparticle layer having uniform easy axis of magnetization, magnetic recording medium having such layer, its production method, and its production apparatus
07/02/2008EP1938343A1 Novel phase change magnetic material
07/02/2008CN101212018A Storage element and memory
07/01/2008US7394626 Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same
07/01/2008US7394625 Structure/method to form bottom spin valves for ultra-high density
06/2008
06/25/2008EP1329912B1 Thin film rare earth permanent magnet, and method for manufacturing the permanent magnet
06/25/2008EP1269491B1 Multi-layer tunneling device with a graded stoichiometry insulating layer and method of manufacture
06/25/2008CN101207177A Magnetoresistive device, film head and disc driving equipment
06/25/2008CN101207176A Information storage devices using movement of magnetic domain wall and methods of manufacturing the same
06/25/2008CN101206945A Method of preparing multi-component high-frequency thin ferromagnetic film material with component gradient
06/24/2008US7390576 [Tx M1-x]y [Z]1-y where T is one or both of Fe and Co; M is one or both of Pt and Pd; Z is Ag, Cu, Bi, Sb, Pb and/or Sn; X represents 0.3-0.7, and Y represents 0.7-1.0; can be dispersed in a flow-enabling state with the particles in positions separated at prescribed spacing
06/24/2008US7390529 magnetic heads having current flowing perpendicular to the plane (CPP) and giant magnetoresistance (GMR), comprising alloy multilayers separated by an antiferromagnetic coupling layer; improved stability, performance and acceptable magnetostriction
06/19/2008US20080145956 Method for manufacturing magnetic sensor apparatus
06/19/2008US20080145523 Manufacturing magnetic sensor by forming antiferromagnetic layer on substrate, forming fixed magnetic layer, forming nonmagnetic interlayer, and forming second fixed magnetic layer, formation of second fixed magnetic layer comprising forming nonmagnetic noncontact-material layer, oxidizing
06/19/2008US20080144233 Tunnel magnetoresistance effect device, and a portable personal device
06/19/2008US20080142156 laminating an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer; sputtering; argon; oxygen; film for the antiferromagnetic layer is made of PtMn alloy or IrMn alloy; magnetic heads; reduce roughness of an interface
06/18/2008EP1933338A1 Magnetic storage element and memory
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