Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009)
06/2014
06/18/2014CN102425011B Corrosive liquid for displaying void defects of heavily P-doped Czochralski silicon crystal and application thereof
06/11/2014CN103857765A Single-crystal silicon-carbide substrate and polishing solution
06/11/2014CN103854992A Substrate etching method
06/11/2014CN103854991A Method of manufacturing semiconductor wafers
06/11/2014CN103849937A Texturing method of solar cell wafer
06/11/2014CN103849933A Method for growing Ce<3+> doped lutetium yttrium silicate scintillation crystal
06/11/2014CN102362017B Silicon wafer and method of manufacturing same
06/05/2014WO2014082545A1 Substrate etching method
06/04/2014CN103835000A Method for high temperature improvement of polysilicon surface roughness
06/04/2014CN103834998A Apatite type silicate terbium magneto-optical crystal and preparation method thereof
06/04/2014CN103831443A Method for utilizing controllability of ionic liquid water interface to prepare cobalt/cobalt oxide nanofilm
06/03/2014CA2548449C Method of incorporating a mark in cvd diamond
05/2014
05/30/2014WO2014080565A1 Soi wafer manufacturing method
05/28/2014CN103828027A 制造碳化硅衬底的方法和碳化硅衬底 The method of producing a silicon carbide substrate and the silicon carbide substrate
05/28/2014CN103820863A 石英衬底上多晶硅的刻蚀方法以及平面光波导的制作方法 Etching on a quartz substrate and method of making polysilicon planar waveguides
05/28/2014CN103820862A 一种高温退火硅片的制备方法 Method for preparing high-temperature annealing of the silicon wafer
05/28/2014CN103820859A 掺杂钇铝石榴石陶瓷转变为单晶的制备方法 Doped yttrium aluminum garnet ceramic into a single crystal production method
05/22/2014WO2014078847A1 Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei by heat treatment
05/22/2014WO2014078827A1 Method of preparing a directional solidification system furnace
05/22/2014WO2014078763A1 Systems and methods for producing seed bricks
05/22/2014WO2014078026A1 Laminated aluminum oxide cover component
05/22/2014WO2014076964A1 Storing container, storing container manufacturing method, semiconductor manufacturing method, and semiconductor manufacturing apparatus
05/22/2014WO2014076963A1 SURFACE TREATMENT METHOD FOR SINGLE CRYSTAL SiC SUBSTRATE, AND SINGLE CRYSTAL SiC SUBSTRATE
05/22/2014US20140137793 Method of fabricating wafer
05/21/2014CN103811583A 一种硅片制绒方法及硅片制绒装置 One kind of silicon wafer texturing method and apparatus Texturing
05/21/2014CN103806108A 一种改进型晶硅电池片的清洗工艺 An improved cleaning process of crystalline silicon solar cells
05/21/2014CN103806107A 一种多晶硅片制绒方法及制绒液 One kind of polycrystalline silicon wafer texturing methods and Texturing liquid
05/21/2014CN103806106A 单晶晶棒粘接装置 Single crystal rod bonding apparatus
05/21/2014CN103806105A 一种可提高扩散性能的涂源扩散方法 A source diffusion coating method can improve the performance of diffusion
05/21/2014CN103805997A 湿式蚀刻方法与基板承载装置 Wet etching method and the substrate carrying device
05/21/2014CN102569055B 一种碳化硅单晶晶片表面及平整度的调整方法 An adjustment method monocrystalline wafer surface and flatness of silicon carbide
05/15/2014DE112007001605B4 Zinkoxiddünnfilm vom p-Typ und Verfahren zur Ausbildung desselben und lichtemittierendes Element Zinc oxide thin film of the same p-type and method of forming and emitting element
05/15/2014DE102012214085A1 Halbleiterscheibe aus einkristallinem Silizium und Verfahren zu deren Herstellung Semiconductor wafer made of monocrystalline silicon, and process for their preparation
05/14/2014CN103794677A 太阳能电池抛光工艺 Solar polishing process
05/14/2014CN103789839A 一种弱氧化单晶硅片的制绒方法 Texturing method for weakly oxidized silicon wafer
05/14/2014CN103789838A 一种晶硅制绒添加剂的制备方法及其应用 Preparation method of polycrystalline silicon velvet additive and its application
05/08/2014WO2014069784A1 Heat treatment method and heat treatment device for single crystal sapphire
05/07/2014CN103774239A 一种单晶硅硅片清洗制绒工艺 One kind of single-crystal silicon wafer cleaning Texturing Process
05/07/2014CN103774238A 热处理装置 Heat treatment device
05/07/2014CN103774237A 热处理装置 Heat treatment device
05/07/2014CN103774227A 一种锰氧化物外延薄膜及其制备方法 One kind of manganese oxide epitaxial film and preparation method
05/07/2014CN102412338B 多晶硅光学掩膜制绒工艺 Polysilicon optical mask Texturing Process
05/01/2014WO2014064347A1 Method for forming a doped silicon ingot of uniform resistivity
05/01/2014US20140117513 Production and Distribution of Dilute Species in Semiconducting Materials
04/2014
04/30/2014CN103762280A Multi-cavity texturing system
04/30/2014CN103757707A Machining process of sapphire material mobile phone screen cover plate
04/30/2014CN103757706A Preparation method of nonlinear optical crystal surface antireflection protective film
04/29/2014US8709265 Method for manufacturing touch panel and method for manufacturing display device provided with touch panel
04/24/2014WO2014061196A1 Soi wafer manufacturing method
04/24/2014WO2013030470A8 System for manufacturing a crystalline material by directional crystallization provided with an additional lateral heat source
04/23/2014EP2722423A2 Silicon wafer and manufacturing method thereof
04/23/2014CN203559163U External liquid supplementing system for cleaning tank
04/23/2014CN203559161U Silicon ingot cooling aid
04/23/2014CN103741207A High-quality crystal growth method
04/17/2014DE102012217727A1 Detecting defects in single crystal silicon, comprises e.g. providing sample of single crystal silicon, contaminating sample with nickel, palladium or platinum, thermal processing the contaminated sample, and cooling the sample
04/16/2014CN203546209U Special chemical cart for mono-crystal texturization process
04/16/2014CN103732809A Method for peeling group 13 element nitride film
04/10/2014DE102013111135A1 Verfahren zum Herstellen eines Halbleiterbauelements und Feldeffekt-Halbleiterbauelement A method of manufacturing a semiconductor device and field effect semiconductor device
04/09/2014CN203530507U Double-bar protective sintering boat
04/09/2014CN103715295A Production method of small-fabric surface and high-resistivity solar cell
04/09/2014CN103710762A Glass filler strip
04/09/2014CN103710761A Mechanism capable of realizing lifting and rotating integrated movement of furnace door
04/09/2014CN103710760A Crystal high-temperature annealing device
04/09/2014CN103710705A Additive for acidic texturing liquid of polycrystalline silicon wafers and application thereof
04/09/2014CN102433590B Method for reducing absorption coefficient of zinc-germanium phosphide crystal
04/03/2014US20140093671 Large aluminum nitride crystals with reduced defects and methods of making them
04/02/2014CN203513834U Solar silicon rod adhesion perpendicularity accuracy device
04/02/2014CN103696022A Method for separating sapphire through ion implantation
04/02/2014CN103696021A Polycrystalline velvet additive-matched surface treatment technology after felting
04/02/2014CN103696010A Hafnium-dysprosium codoped lithium niobate crystal and preparation method thereof
04/02/2014CN103696003A Production method of quartz lead with enlarged diameter
04/02/2014CN102479868B Method for quickly adjusting thickness reduction amount during polycrystal texturing
04/01/2014CA2532384C Annealing single crystal chemical vapor deposition diamonds
03/2014
03/27/2014WO2014045220A1 Method for surface treatment of single crystals of materials
03/26/2014CN203498508U Boat feeding mechanism of LED (Light Emitting Diode) alloy furnace
03/26/2014CN203498506U Workpiece basket for cleaning leftover materials
03/26/2014CN103681974A Dual-slot polycrystalline silicon chip texturing method
03/26/2014CN103681967A Method for adopting dry-oxygen oxidation method to prepare local back field passivation battery
03/26/2014CN103668468A Silicon wafer polishing method
03/26/2014CN103668467A Polycrystalline silicon wafer texturization additive and application thereof
03/26/2014CN103668466A Polycrystalline silicon chip texturing liquid and texturing method
03/26/2014CN103668465A Mold and method for fabricating scintillation detector crystal module
03/26/2014CN103668464A High-temperature crystal annealing device in hydrogen environment
03/26/2014CN103668458A Hafnium, neodymium, ytterbium and thulium doped lithium niobate crystal and preparation method thereof
03/19/2014CN103643304A Method for activating polysilicon texturing liquid medicine
03/19/2014CN103643303A Processing method of monocrystalline silicon acid corrosion piece
03/19/2014CN103643302A Thermal sapphire compounding method
03/19/2014CN103643301A Method for annealing large-size calcium fluoride crystal
03/19/2014CN103643300A Annealing method applied to sapphire processing
03/19/2014CN103643299A Semiconductor processing
03/19/2014CN103643287A Germanium olefine two-dimensional atom crystal material and its preparation method
03/18/2014US8673163 Method for fabricating thin sheets of glass
03/13/2014WO2014037793A1 Pseudo substrate with improved efficiency of usage of single crystal material
03/12/2014EP2705179A1 Diamond sensors, detectors, and quantum devices
03/12/2014CN203474964U Automatic liquid supplement device in polycrystalline silicon wafer etching
03/12/2014CN103628133A Method for preparing aqueous solution of directional growth monocrystalline ZnO nano wall
03/12/2014CN102437017B Method for preparing nano structure on surface of (111) silicon wafer
03/12/2014CN102187020B Indium phosphide substrate manufacturing method, epitaxial wafer manufacturing method, indium phosphide substrate, and epitaxial wafer
03/06/2014WO2014035481A1 Group iii nitride wafer and its production method
03/05/2014CN103614779A Method for increasing uniformity of on-chip n-type doping concentration of silicon carbide epitaxial wafer
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