C30B 30 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions

Patents for C30B 30 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions (965)
05/2007
05/18/2007	WO2005084225A3 System for continuous growing of monocrystalline silicon
05/16/2007	EP1456436B1 Method for producing particles with diamond structure
05/10/2007	US20070101927 Silicon based optical waveguide structures and methods of manufacture
05/10/2007	US20070101926 Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer
05/03/2007	US20070095277 Heat exchange having adsorbing core for use in refrigerating system
05/03/2007	US20070095275 Method for manufacturing silicon single crystal
04/2007
04/26/2007	US20070089666 Silicon semiconductor substrate and production method thereof
04/19/2007	US20070084400 Quartz glass crucible and method for treating surface of quartz glass crucible
04/19/2007	US20070084397 Quartz glass crucible and method for treating surface of quartz glass crucible
04/12/2007	US20070079749 Method and apparatus for producing spherical silicon single-crystal
04/05/2007	WO2007016193A3 Nanoparticle synthesis and associated methods
04/05/2007	US20070074654 Evaporation source machine and vaccum deposition apparatus using the same
04/05/2007	US20070074653 Apparatus for preparation of silicon crystals with reduced metal content
04/04/2007	EP1768927A2 Systems and methods for manufacturing granular material, and for measuring and reducing dust in granular material
04/03/2007	US7200493 Method for screening crystallization or amorphous stage conditions for molecules
04/03/2007	US7198672 Drop tube type granular crystal producing device
03/2007
03/29/2007	US20070068448 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot
03/29/2007	US20070068447 Method of manufacturing silicon wafer
03/29/2007	US20070068446 Compound semiconductor single crystal and production process thereof
03/28/2007	CN1936113A Low defect density, ideal oxygen precipitating silicon
03/28/2007	CN1936112A 低缺陷浓度的硅 A low defect density silicon
03/27/2007	US7195671 Thermal shield
03/22/2007	US20070062442 Apparatus for growing high quality silicon single crystal ingot and growing method using the same
03/15/2007	US20070056505 Method and apparatus for making a highly uniform low-stress single crystal by drawing from a melt and uses of said crystal
03/15/2007	US20070056504 Method and apparatus to produce single crystal ingot of uniform axial resistivity
03/08/2007	US20070051303 Semiconductor single crystal manufacturing apparatus
03/08/2007	US20070051298 Method of searching for and generating high free energy forms
03/08/2007	US20070051297 Silica glass crucible with barium-doped inner wall
03/08/2007	US20070051296 Silica glass crucible with bubble-free and reduced bubble growth wall
03/01/2007	US20070044711 Supporting apparatus for supporting a growing single crystal of semiconductor material, and process for producing a single crystal
03/01/2007	US20070044709 Silicon Wafer Surface Defect Evaluation Method
03/01/2007	US20070044708 Ultrasonic sensor assembly and method
02/2007
02/15/2007	WO2007017552A1 Method and apparatus using of the electric field for controlling of the crystallizing of material or materials
02/15/2007	US20070034138 Method for growing silicon single crystal and silicon wafer
02/14/2007	EP1752564A1 Device and method for counter-diffusion crystal growth
02/08/2007	DE112005000350T5 Verfahren zum Herstellen eines Einkristall-Halbleiters A method for producing a single crystal semiconductor
02/07/2007	EP1749123A2 System for continuous growing of monocrystalline silicon
02/01/2007	WO2007013148A1 Silicon single crystal pulling apparatus and method thereof
02/01/2007	US20070022943 A Silicon Single Crystal Ingot and Wafer, Growing Apparatus and Method Therof
02/01/2007	US20070022942 Method and apparatus for growing high quality silicon single crystal, silicon single crystal ingot grown thereby and wafer produced from the same single crystal ingot
01/2007
01/25/2007	US20070017436 Process for growing silicon single crystal and process for producing silicon wafer
01/25/2007	US20070017435 Mechanism for controlling melt level in single crystal pulling apparatus, method for controlling melt level in single crystal pulling apparatus, mechanism for adjusting melt level in single crystal pulling apparatus and method for adjusting melt level while pulling single crystal
01/25/2007	US20070017434 Process for producing silicon single crystal
01/25/2007	US20070017433 Process for producing single crystal and single crystal
01/18/2007	US20070012243 Crucible or related object holder and method of manufacture
01/18/2007	US20070012238 Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal
01/11/2007	US20070006797 Lithium tantalate substrate and method for producing same
01/04/2007	WO2006124152A3 Method for using a static electric field to induce crystallization and to control crystal form
01/04/2007	US20070000429 Method for producing single crystal and single crystal
01/03/2007	EP1739212A1 Dropping pipe type granular crystal manufacturing apparatus and granular crystal manufacturing method
01/03/2007	CN1890409A Dropping pipetype granular crystal manufacturing apparatus and granular crystal manufacturing method
12/2006
12/28/2006	US20060288926 Scintillator single crystal and production method of same
12/28/2006	DE112005000300T5 Vorrichtung und Verfahren zum Herstellen von Einkristall-Halbleitern Apparatus and method for manufacturing single-crystal semiconductors
12/21/2006	WO2006005018A3 Process for producing a crystalline silicon ingot
12/21/2006	US20060283378 Silicone single crystal production process
12/21/2006	US20060283377 Method for producing silicon single crystals and silicon single crystal produced thereby
12/21/2006	US20060283376 Apparatus for manufacturing semiconductor single crystal
12/21/2006	US20060283374 Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties
12/21/2006	US20060283373 Method for growing silicon single crystal
12/19/2006	US7151007 Doped organic semiconductor materials and process for their preparation
12/07/2006	US20060272570 Method for producing a single crystal
11/2006
11/30/2006	US20060266278 Silicon wafer, method for producing silicon wafer and method for growing silicon single crystal
11/30/2006	US20060266277 Single crystal heat treatment method
11/30/2006	US20060266276 Single crystal heat treatment method
11/23/2006	WO2006124152A2 Method for using a static electric field to induce crystallization and to control crystal form
11/23/2006	WO2006123403A1 Granular crystal production apparatus
11/23/2006	US20060260536 Vessel for growing a compound semiconductor single crystal, compound semiconductor single crystal, and process for fabricating the same
11/16/2006	US20060254499 Method For Manufacturing Nitrogen-Doped Silicon Single Crystal
11/16/2006	US20060254498 Silicon single crystal, and process for producing it
11/09/2006	US20060249071 Method and apparatus for crystal growth
11/02/2006	US20060243194 Method of forming a crystalline phase material
11/02/2006	US20060243192 Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal
11/01/2006	CN1854353A Low defect density epitaxial wafer and a process for the preparation thereof
10/2006
10/26/2006	US20060240608 Method and apparatus for crystallizing silicon, method of forming a thin film transistor, a thin film transistor and a display apparatus using same
10/26/2006	US20060236916 Quartz glass crucible for pulling up silicon single crystal and method for manufacture thereof
10/19/2006	DE102006013714A1 Herstellungsverfahren eines granulären Siliciumkristalls Process for manufacturing a granular silicon crystal
10/18/2006	CN1280455C Low defect density silicon
10/18/2006	CN1280454C Low defect density, ideal oxygen precipitating silicon
10/12/2006	WO2006107769A2 Solidification of crystalline silicon from reusable crucible molds
10/12/2006	US20060225640 Method for manufacturing silicon single crystal, and silicon wafer
10/12/2006	US20060225639 Method for growing silicon single crystal, and silicon wafer
10/05/2006	US20060219162 Solidification of crystalline silicon from reusable crucible molds
09/2006
09/28/2006	US20060213424 Silicon wafer and process for the heat treatment of a silicon wafer
09/14/2006	US20060201412 Method of making highly uniform low-stress single crystals with reduced scattering
09/08/2006	WO2006007082A3 Systems and methods for manufacturing granular material, and for measuring and reducing dust in granular material
08/2006
08/31/2006	US20060191470 Method and apparatus for growing multiple crystalline ribbons from a single crucible
08/31/2006	US20060191469 Method for pulling up single crystal
08/31/2006	US20060191468 Process for producing single crystal
08/23/2006	CN1822318A Semiconductor device and method for producing the same
08/10/2006	US20060174820 Method for producincg silicon wafer and silicon wafer
08/10/2006	US20060174819 Method for producing single crystal and single crystal
08/03/2006	US20060169199 Crystallization and purification of macrolides
08/01/2006	US7083677 Silicon seed crystal and method for manufacturing silicon single crystal
07/2006
07/13/2006	US20060150893 Substrate for forming magnetic garnet single-crystal film, process for producing the same, optical device and process for producing the same
07/11/2006	US7074271 Method of identifying defect distribution in silicon single crystal ingot
07/06/2006	US20060144321 Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
07/06/2006	US20060144320 Electromagnetic pumping of liquid silicon in a crystal growing process
06/2006
06/29/2006	US20060137600 Lightly doped silicon carbide wafer and use thereof in high power devices
06/29/2006	US20060137599 Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby
06/22/2006	US20060130740 Process for producing single crystal and single crystal

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