Patents for C30B 28 - Production of homogeneous polycrystalline material with defined structure (2,968) |
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01/15/2014 | CN102358952B Fuel-gas-heating directional solidification furnace |
01/08/2014 | CN203382852U Variable heater high-efficient polycrystalline silicon ingot casting furnace |
01/08/2014 | CN203382851U Testing device for melting thickness of seed crystals of pseudo-single crystal ingot furnace |
01/08/2014 | CN203382850U Polycrystalline silicon ingot furnace thermal field heating device |
01/08/2014 | CN203382849U Lifting mechanism for crucible platform of pseudo-single crystal ingot furnace |
01/08/2014 | CN203382848U High-efficient polycrystalline silicon ingot casting furnace with heat insulation protective plate |
01/08/2014 | CN203382847U Secondary feeding device for polycrystalline silicon ingot furnace |
01/08/2014 | CN203382846U Hexahedral thermal field structure of thermal insulator of pseudo-single crystal ingot furnace |
01/08/2014 | CN203382845U Vacuum sealing structure of crucible platform lifting device for pseudo-single crystal ingot furnace |
01/08/2014 | CN203382844U Lifting mechanism for lower heater of pseudo-single crystal ingot furnace |
01/08/2014 | CN203382843U Gas cooling type directional freezing device |
01/08/2014 | CN203382842U Polycrystalline silicon directional solidification device |
01/08/2014 | CN103498198A Preparation method of regular pentagonal prism-shaped copper micrometer wire |
01/08/2014 | CN103498195A Casting apparatus and casting method |
01/08/2014 | CN103498194A Directional solidification equipment and method for preparing polycrystalline silicon by equipment |
01/03/2014 | WO2014004481A1 Controlled directional solidification of silicon |
01/03/2014 | WO2014001888A1 Film of polycrystalline semiconductor material, method of making same and undercooling molds therefor, and electronic device |
01/03/2014 | WO2014001886A1 Film of polycrystalline semiconductor material, method of making same and orienting/undercooling molds therefor, and electronic device |
01/01/2014 | CN203373448U Ingot casting furnace |
01/01/2014 | CN203373447U Guard board device for seed crystal ingot casting crucible |
01/01/2014 | CN203373446U Device for observing liquid level in polycrystal ingot furnace |
01/01/2014 | CN103489762A Method of forming thin film poly silicon layer |
01/01/2014 | CN103484936A Constant-temperature heating process of ingot furnace |
01/01/2014 | CN103484935A Quartz crucible and manufacturing method thereof |
01/01/2014 | CN103484934A Vapor deposition device and heating system thereof |
01/01/2014 | CN103484121A Method for preparing near infrared fluorescent Ag2Se colloid semiconductor nanocrystals by adopting normal-temperature aqueous phase process |
01/01/2014 | CN102367572B Sintering-free spraying method of polysilicon ingot crucible |
12/31/2013 | US8617447 Methods of making an unsupported article of pure or doped semiconducting material |
12/25/2013 | CN203360625U Baffle lifting connecting part and baffle lifting device provided with same |
12/25/2013 | CN203360624U 坩埚 Crucible |
12/25/2013 | CN203360623U Polycrystalline silicon ingot furnace |
12/25/2013 | CN203360622U Polycrystalline silicon ingot furnace |
12/25/2013 | CN203360618U Heating device of polysilicon ingot furnace |
12/25/2013 | CN103469303A Polycrystalline silicon ingot and preparation method thereof, polycrystalline silicon chip and crucible for polycrystalline silicon ingot casting |
12/25/2013 | CN103469302A Polycrystalline silicon ingoting process for shortening corner crystal growth time |
12/25/2013 | CN103469293A Preparation method of polycrystalline silicon |
12/25/2013 | CN103469292A Polycrystalline silicon slice and preparation method thereof |
12/25/2013 | CN103468264A Manufacture method of polycrystalline Ce:YAG fluorophor |
12/24/2013 | US8613901 Titanium oxide nano tube material and method for manufacturing the same |
12/18/2013 | EP2524977B1 Apparatus for manufacturing silicon substrate for solar cell using continuous casting facilitating temperature control and method of manufacturing silicon substrate using the same |
12/18/2013 | EP1888802B1 Method for solid state growing of single-crystal metals |
12/18/2013 | CN103456608A Method for growing single crystals and polycrystals on semiconductor substrate at same time |
12/18/2013 | CN103451727A Zone melting furnace polycrystalline rod heat preservation device and heat preservation method thereof |
12/18/2013 | CN103451726A Water chilling ingot furnace and ingot casting process thereof |
12/17/2013 | US8609059 Production method, production vessel and member for nitride crystal |
12/11/2013 | CN203333815U Quartz crucible with seeding function at bottom for polysilicon ingot |
12/11/2013 | CN103436959A Polycrystalline silicon ingot preparation method |
12/11/2013 | CN103436957A Polycrystalline silicon ingot casting process with double-mode control on melting and heat insulation |
12/11/2013 | CN103436956A Quick-melting and slow crystal growth high-efficiency polycrystalline silicon ingot casting process |
12/11/2013 | CN103436955A Process control method for directional solidification of polycrystalline silicon |
12/11/2013 | CN103436952A Neodymium-doped yttrium aluminum garnet and pure yttrium aluminum garnet bonded growth method |
12/11/2013 | CN103436729A Thermoelectric material and preparation method thereof |
12/11/2013 | CN103435010A Preparation method of high-gloss catalytic-activity bismuth oxyiodide crystal |
12/11/2013 | CN102296354B Ingot casting method for silicon material |
12/11/2013 | CN102084038B Direct silicon or reactive metal casting |
12/10/2013 | US8603898 Method for forming group III/V conformal layers on silicon substrates |
12/04/2013 | CN203320182U Thermal field structure of polycrystalline silicon ingot furnace |
12/04/2013 | CN203320178U Mold release tool |
12/04/2013 | CN203320177U Double-heater polysilicon ingot casting furnace heating system |
12/04/2013 | CN103422170A Disc-shaped MgF2 crystal filming material and production method thereof |
12/04/2013 | CN103422166A Quartz crucible for ingotting polycrystalline silicon solar cell, and spraying method thereof |
12/04/2013 | CN103422165A Polycrystalline silicon and preparation method thereof |
12/04/2013 | CN102383183B Crystalline silicon ingot casting furnace |
11/27/2013 | CN103409800A Large-diameter CdTe or CdZnTe polycrystalline rod synthesis apparatus and preparation method thereof |
11/27/2013 | CN103409797A Device for measuring long crystal bar of ingot furnace |
11/27/2013 | CN103409796A Testing device for seed crystal melting thickness of pseudo-single crystal silicon ingot furnace |
11/27/2013 | CN103409795A Crucible platform lifting mechanism of pseudo-single crystal silicon ingot furnace |
11/27/2013 | CN103409793A Water-cooled plate of quasi-single crystal silicon ingot furnace and preparation method thereof |
11/27/2013 | CN103409792A Water-cooled plate of quasi-single crystal silicon ingot furnace and preparation method thereof |
11/27/2013 | CN103409791A Six-sided thermal field structure in thermal insulators of quasi-single crystal silicon ingot furnace |
11/27/2013 | CN103409790A Lower heater lifting mechanism of pseudo-single crystal silicon ingot furnace |
11/27/2013 | CN103409789A Directional solidifying device of polycrystalline silicon |
11/27/2013 | CN103409788A Multi-bar hole crucible sintering device for preparing MgF2 rodlike crystal |
11/26/2013 | US8592289 Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer |
11/26/2013 | US8591795 Method of exocasting an article of semiconducting material |
11/21/2013 | US20130309496 "Method for Synthesizing Ultrahigh-Purity Silicon Carbide" |
11/20/2013 | CN203295663U Polycrystal ingot furnace |
11/20/2013 | CN203295662U Circular truncated cone type water-cooling crucible convenient for ingot taking-out |
11/20/2013 | CN103397380A Polysilicon ingot furnace and rapid ingot casting technology thereof |
11/20/2013 | CN103397379A High-efficiency polycrystalline silicon ingot casting furnace |
11/20/2013 | CN103397378A Preparation method of polycrystalline silicon ingot |
11/20/2013 | CN103397377A Uniform polycrystalline silicon crystal growing technology and ingot furnace thermal field heating device thereof |
11/20/2013 | CN101935869B Crucible and substrate slice for growing and casting monocrystalline silicon |
11/19/2013 | US8585822 Method for testing group III-nitride wafers and group III-nitride wafers with test data |
11/19/2013 | US8585820 Abatement of reaction gases from gallium nitride deposition |
11/13/2013 | CN203284496U Silicon ingot furnace and leakage detection device thereof |
11/13/2013 | CN103388176A Ingot furnace and method for preparing silicon ingot |
11/12/2013 | US8580033 Method for producing a single crystal of semiconductor material |
11/12/2013 | US8580032 Method for manufacturing single crystal |
11/07/2013 | US20130295363 Metal nitrides and process for production thereof |
11/06/2013 | CN203270092U Crucible unit for growing crystal |
11/06/2013 | CN103382572A Crucible for enabling polycrystalline silicon ingot to be free of black edge and preparation method thereof |
11/06/2013 | CN102351184B Method for recovering silicon carbide, high-purity silicon and dispersion liquid from silicon material linear cutting waste mortar |
11/05/2013 | US8574528 Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime |
11/05/2013 | US8574362 Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot |
10/31/2013 | WO2013114313A3 Crucible for solidifying a silicon ingot, and production method therefor |
10/31/2013 | US20130284084 Crucibles |
10/30/2013 | EP2657377A1 Feed material for epitaxial growth of monocrystalline silicon carbide, and method for epitaxial growth of monocrystalline silicon carbide |
10/30/2013 | EP2657376A1 Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon |
10/30/2013 | EP2657375A1 Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide |