Patents for C30B 1 - Single-crystal growth directly from the solid state (1,958)
09/2010
09/29/2010CN101409424B Nd<3+> ion sensitized anti-radiation laser crystal Nd,Er:GSGG and preparation method thereof
09/29/2010CN101307495B '6H'-BaIrO3 crystal and method for making same
09/29/2010CN101307494B Cubic perovskite structure BaRuO3 crystal and method for making same
09/29/2010CN101307491B Sr(1-x)CaxCrO3 perovskite Mott compound and its high pressure high-temperature synthesis method
09/29/2010CN101005017B Method of forming a semiconductor thin film
09/28/2010US7803520 Crystallization apparatus, crystallization method, device and phase modulation element
09/28/2010US7803340 irradiating SiOx (X is 0.5 to2.0) particles each including an amorphous silicon particle having a particle diameter of 0.5 to 5 nm with light (laser beam) to produce SiO or SiO2 crsyatalline particles
09/22/2010CN101841018A Single crystal lithium manganese oxide for lithium ion battery and preparation method thereof
09/16/2010WO2010104656A2 Rapid crystallization of heavily doped metal oxides and products produced thereby
09/16/2010US20100233026 Device and method for pressure-driven plug transport and reaction
09/15/2010CN101319347B Method for crystal surface self-organizing growth of fine-nano-structure with femtosecond laser
09/14/2010US7794538 Self-assembly method, opal, photonic band gap, and light source
09/08/2010CN1748291B Method of fabrication of a support structure for a semiconductor device
09/01/2010EP2224505A2 Thermoelectric nanowire and method of manufacturing the same
09/01/2010EP1508044B1 Device and method for pressure-driven plug transport and reaction
09/01/2010CN101818375A Method for preparing copper-indium-gallium-selenium(sulfur) light absorption layer by adopting non-vacuum process
08/2010
08/26/2010US20100214641 Crystallization apparatus, crystallization method, device and phase modulation element
08/24/2010US7781727 Optoelectronic component comprising an encapsulant
08/24/2010US7781316 Methods of manufacturing metal-silicide features
08/18/2010CN1966401B Semiconductor material
08/17/2010US7777403 Photonic-crystal filament and methods
08/17/2010US7776151 Method and apparatus for forming crystalline portions of semiconductor film
08/11/2010EP2216428A1 PROCESS FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTAL SiC SUBSTRATE PRODUCED BY THE PROCESS
08/04/2010CN101792931A Metal sulfide single crystal material and preparation method
07/2010
07/20/2010US7758695 Method for fabricating metal substrates with high-quality surfaces
07/14/2010EP2206808A1 Method for manufacturing a mono-crystalline semiconductor layer on a substrate
07/08/2010US20100173127 Method for producing a crystalline germanium layer on a substrate
07/01/2010WO2010073712A1 Light-transmissive polycrystalline material and method for producing the same
07/01/2010US20100162946 System for continuous growing of monocrystalline silicon
06/2010
06/23/2010CN101748474A Simple method for preparing linear zinc oxide whiskers
06/22/2010US7741165 Polycrystalline SiGe Junctions for advanced devices
06/16/2010CN1902335B Melting and vaporizing apparatus and method
06/15/2010US7737502 Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI sructure with elevated source/drain
06/15/2010US7736960 Process for producing a photoelectric conversion device
06/15/2010US7736433 BaTiO3—PbTiO3 series single crystal and method of manufacturing the same, piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator
06/09/2010CN1942610B Ultrahard diamonds and method of making thereof
06/09/2010CN101250751B Method for preparing crystal wisker of potassium hexatitanate
06/09/2010CN101033558B Infrared window material
06/03/2010WO2010060673A1 Thick epitaxial silicon by grain reorientation annealing and applications thereof
06/02/2010CN101717989A Three-dimensional photonic crystal manufacturing method
06/02/2010CN101311371B Process for preparing SnO2-ZnO heterogenous nano-wire
06/02/2010CN101235542B Single-crystal growth method for germanium zinc phosphide
05/2010
05/27/2010DE202009014690U1 Flexible und infiltrierbare Bündel aus Keramik- oder Metallfasern mit stark vergröbertem Gefüge Flexible and infiltratable bundle of ceramic or metal fibers with strong vergröbertem structure
05/26/2010EP1500722B1 Functional devices using single crystal material having high density dislocations arranged one-dimensionally in straight line form and method for their preparation
05/26/2010CN1729600B Methods of forming semiconductor devices having self aligned semiconductor means and contact layers and related devices
05/26/2010CN1726624B Methods of forming semiconductor device and related device including platform structure and multi-layer passivating layer
05/26/2010CN1577755B Laser beam processing method and laser beam processing machine
05/18/2010US7718001 Method for fabricating semiconductor epitaxial layers using metal islands
05/12/2010DE102008053856A1 Method for melt-free transformation of bundles of polycrystalline fibers into bundles of single crystalline fiber or fibers with single crystalline area, by laterally fanning out the bundles of fibers from polycrystalline material
04/2010
04/28/2010CN1577742B Solution deposition of chalcogenide films
04/22/2010WO2010043716A2 Method for the controlled growth of a graphene film
04/22/2010US20100099273 Enhancing the width of polycrystalline grains with mask
04/14/2010CN101694010A Preparation method of layered nanostructured InSb pyroelectric material
04/14/2010CN101694009A Method for auxiliary synthesis of potassium titanate crystal whisker by using high-energy ball mill method
04/13/2010US7696449 Silicon crystallizing device
04/08/2010WO2010039871A1 Reconfigurable array of magnetic automata (rama) and related methods thereof
04/07/2010CN101691671A Titanium diboride whisker material and preparation method thereof
03/2010
03/31/2010EP2167701A1 Method for providing a crystalline germanium layer on a substrate
03/24/2010CN101680107A Method for restructuring semiconductor layers
03/16/2010US7679141 High-quality SGOI by annealing near the alloy melting point
03/09/2010US7675068 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
02/2010
02/23/2010US7666767 Mask for sequential lateral solidification (SLS) process and a method thereof
02/09/2010US7660042 Apparatus for crystallizing semiconductor with laser beams
01/2010
01/28/2010US20100019273 Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device
01/26/2010US7651567 Mask for sequential lateral solidification and crystallization method using thereof
01/21/2010US20100012990 Mosfets including crystalline sacrificial structures
01/20/2010CN100581775C High pressure crystal growth apparatuses and associated methods
01/07/2010US20100001619 Perovskite-type oxide single crystal and method of manufacturing the same, composite piezoelectric material, piezoelectric vibrator, ultrasonic probe, and ultrasonic diagnostic apparatus
01/05/2010US7642626 Semiconductor devices including mesa structures and multiple passivation layers
12/2009
12/29/2009US7638728 Enhancing the width of polycrystalline grains with mask
12/29/2009CA2491964C Single crystalline structure material having low material absorption and fabrication method therefor
12/23/2009CN101608340A Iron-based high-temperature superconductive crystal and preparation method thereof
12/22/2009US7635414 System for continuous growing of monocrystalline silicon
12/22/2009US7635412 Crystallizing silicon using a laser beam transmitted through a mask
12/16/2009CN100570770C Ceramics film and production method therefor, and ferroelectric capacitor, semiconductor device, other elements
12/08/2009US7628853 Lithium tantalate substrate and process for its manufacture
12/03/2009US20090297395 Methods of treating semiconducting materials and treated semiconducting materials
11/2009
11/28/2009CA2666034A1 Method of manufacturing iii nitride crystal, iii nitride crystal substrate, and semiconductor device
11/25/2009CN201351183Y High-efficient gypsum whisker reaction furnace
11/24/2009US7622318 Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device
11/19/2009US20090283028 Nitride semiconductor heterostructures and related methods
11/18/2009EP2118031A2 Method for depositing a thin layer and product thus obtained
11/18/2009CN100560813C Low-temperature solid phase reaction preparation of silicon nitride nano-material
11/18/2009CN100560486C Method for preparing nano silicon carbide
11/03/2009US7613219 Semiconductor devices having self aligned semiconductor mesas and contact layers
10/2009
10/29/2009US20090269892 Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus
10/27/2009US7608527 Laser irradiation method and method for manufacturing crystalline semiconductor film
10/27/2009US7608148 Crystallization apparatus and crystallization method
10/27/2009US7608144 Pulse sequencing lateral growth method
10/20/2009US7605025 Methods of forming MOSFETS using crystalline sacrificial structures
10/20/2009US7604697 Heteroepitaxial growth method for gallium nitride
10/15/2009US20090256057 Systems and methods for implementing an interaction between a laser shaped as line beam and a film deposited on a substrate
10/07/2009CN101550602A CaSO* crystal whisker with desulfurized gypsum as raw material and preparing method
10/01/2009WO2009119338A1 Sintered silicon wafer
09/2009
09/30/2009CN101545139A Method for preparing yttrium barium copper oxygen superconducting block material by taking Ba3Cu5*Ox powder as fluid
09/29/2009US7594965 Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device
09/22/2009US7591894 LuAP scintillator
09/09/2009CN100539021C Low temperature epitaxial growth of silicon-containing films using UV radiation
09/08/2009US7585714 Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus
09/01/2009US7582357 Silicon semiconductor substrate
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