Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 1 - Single-crystal growth directly from the solid state
Patents for C30B 1 - Single-crystal growth directly from the solid state (1,958)
11/1989
11/28/1989US4883559 Reduction of transition metal oxide or nitride with cyanide salt
11/23/1989EP0342992A1 Method for producing single crystals of chromium
10/1989
10/25/1989EP0338252A1 Method for doping zinc selenide single crystal
10/19/1989WO1989009747A1 Process for making transition metal nitride whiskers
09/1989
09/26/1989CA1260293A1 Monocristalline alloy with nickel based matrix
09/20/1989EP0333120A1 Method for producing semiconductive single crystal
09/12/1989US4866007 Method for preparing single-crystal ZnSe
09/06/1989EP0330899A1 Process for making a film of a metal oxide superconductive material having a high critical temperature, and device for carrying out this process
08/1989
08/17/1989DE3841517A1 Method for the production of a workpiece composed of a nickel-based superalloy hardened by oxide dispersion and consisting of a single crystal with a preferential longitudinal direction
08/10/1989WO1989007087A1 SUPERCONDUCTING Bi-Sr-Ca-Cu OXIDE COMPOSITONS AND PROCESS FOR MANUFACTURE
08/10/1989DE3834963A1 Method for the epitaxial production of a layer of a metal oxide superconductor material having high critical temperature
06/1989
06/20/1989US4840816 Method of fabricating optical waveguides by ion implantation doping
04/1989
04/05/1989EP0310332A2 Preferential orientation of metal oxide superconducting materials
01/1989
01/25/1989EP0300863A1 Method of making devices comprising thin films of superconductive material, and devices made by this method
11/1988
11/09/1988EP0289507A1 Method of forming single crystal silicon using spe seed and laser crystallization
09/1988
09/21/1988EP0282998A2 Method for preparing single-crystal ZnSe
09/21/1988EP0282839A2 Films of high Tc oxide superconductors and method for making the same
08/1988
08/30/1988US4767585 Process for producing molded bodies from granular material of silicon, germanium or mixed crystals of these elements
08/30/1988US4767493 Molds, spacings, controlling, thermal properties
08/03/1988CN85100534B High temp. crystal growing unit using temp. gradient method
05/1988
05/10/1988US4743309 Method for zone heat treatment of a metallic workpiece
01/1988
01/26/1988US4721547 Process for producing single crystal of garnet ferrite
12/1987
12/02/1987EP0247158A1 Method for fabricating articles having heteroepitaxial structures.
11/1987
11/04/1987EP0243805A2 Process for the production of shaped articles from granules based on silicon, germanium or mixed crystals of these elements
11/03/1987CA1228787A1 Process for preparing znse single crystal
09/1987
09/02/1987EP0035561B1 Improved method of crystallizing amorphous material with a moving energy beam
08/1987
08/19/1987EP0232477A1 Process for zone-annealing of metal workpieces
07/1987
07/02/1987WO1987003916A1 Method of forming single crystal silicon using spe seed and laser crystallization
06/1987
06/16/1987EP0225592A2 Recrystallizing conductive films
06/04/1987WO1987003306A1 Method for fabricating articles having heteroepitaxial structures
06/02/1987US4670086 Process for the growth of structures based on group IV semiconductor materials
05/1987
05/26/1987US4668331 Heat treatment
05/12/1987CA1221606A1 Method of producing single-crystal silicon film
04/1987
04/07/1987CA1220121A1 Electrical conductor and method of production thereof
02/1987
02/25/1987EP0211187A2 Process for producing single crystal of garnet ferrite
01/1987
01/27/1987US4639280 High creep resistance, very low carbon, zirconium or boron
01/21/1987EP0209257A1 Ion implantation
01/08/1987DE3615836A1 Method for inductive heating of materials in the form of wafers
01/06/1987US4634493 Unidirectional cooling of mercury-cadmium-telluride melt
01/06/1987US4634491 Process for producing a single crystal article
12/1986
12/24/1986CN85103942A Laser-heating recrystallization method to polycrystalline silicon on the insulated layer
12/10/1986EP0051639B1 Implantation of vaporized material on melted substrates
11/1986
11/26/1986CN85104093A Process for decolorizing zinc tungstate monocrystals by heat treatment
10/1986
10/29/1986EP0199388A1 Method of converting polycrystalline semiconductor material into monocrystalline semiconductor material
09/1986
09/23/1986CA1211688A1 Solid state production of multiple single crystal articles
08/1986
08/06/1986CN85100534A High temp. crystal growing unit using temp. gradient method
08/05/1986CA1209017A1 Method of producing single crystal film
07/1986
07/15/1986US4600446 Method for tempering and working high strength low ductile alloy
07/08/1986US4599133 Conductors having high density integration
05/1986
05/21/1986EP0057696B1 Heat treated single crystal articles and process
05/20/1986US4590130 Solid state zone recrystallization of semiconductor material on an insulator
05/13/1986US4588446 Method for producing graded band gap mercury cadmium telluride
05/06/1986CA1204044A1 Growth of structures based on group iv semiconductor materials
04/1986
04/22/1986US4584053 Vapor deposition in a pressurized capsule, and hot pressing
04/15/1986US4582545 Method of producing electrical conductor
04/08/1986US4581520 Heat treatment machine for semiconductors
03/1986
03/25/1986US4578143 Method for forming a single crystal silicon layer
01/1986
01/21/1986US4565599 Graphoepitaxy by encapsulation
01/21/1986US4565584 Method of producing single crystal film utilizing a two-step heat treatment
01/08/1986EP0090817B1 Thin films of compounds and alloy compounds of group iii and group v elements
12/1985
12/10/1985CA1197756A1 Method of producing a single crystal article
11/1985
11/26/1985US4555301 Formation of heterostructures by pulsed melting of precursor material
08/1985
08/27/1985CA1192477A1 Method of producing columnar crystal superalloy material with controlled orientation
07/1985
07/31/1985EP0149942A2 Single crystal nickel-base matrix alloy
05/1985
05/28/1985US4519870 Method for producing a single crystal
05/21/1985US4518442 Method of producing columnar crystal superalloy material with controlled orientation and product
03/1985
03/19/1985CA1184095A1 Process and apparatus for recrystallization of thin strip material
02/1985
02/13/1985EP0132618A1 Process for preparing ZnSe single crystal
01/1985
01/01/1985US4491560 Large crystal grains or single crystals of molybdenum and process for production thereof
12/1984
12/04/1984US4486652 Blackbody radiation source with constant planar energy flux
11/1984
11/06/1984US4481406 Heater assembly for thermal processing of a semiconductor wafer in a vacuum chamber
10/1984
10/10/1984EP0121152A1 Method of producing electrical conductor
10/09/1984US4475980 Solid state production of multiple single crystal articles
09/1984
09/04/1984US4469551 Laser beams guided by optical fibers, semiconductors
08/1984
08/14/1984US4465546 Selenides, tellurides, arsenides, phosphides
08/08/1984EP0035561A4 Improved method of crystallizing amorphous material with a moving energy beam.
08/07/1984US4464557 Crystal growth in glasses and amorphous semiconductors
07/1984
07/31/1984US4463028 Method for preparing composite or elementary semi-conducting polycrystalline films
04/1984
04/25/1984EP0106722A1 Semiconductor heat treatment apparatus
04/24/1984US4444615 Heating polycrystalline nucleus
04/24/1984CA1166319A1 Equipment and method for annealing semiconductors using light wave energy
03/1984
03/07/1984EP0102130A1 Method of growing monocrystalline bodies of volatile compounds
02/1984
02/21/1984US4433246 Blackbody radiation source for producing constant planar energy flux
12/1983
12/20/1983US4421479 Process for treating a semiconductor material by blackbody radiation source with constant planar energy flux
11/1983
11/22/1983US4417347 Semiconductor processor incorporating blackbody radiation source with constant planar energy flux
11/16/1983EP0093981A1 Method of producing a single-crystal silicon film
10/1983
10/18/1983US4410392 Crystallization, stress relieving
10/12/1983EP0090817A1 Thin films of compounds and alloy compounds of group iii and group v elements.
10/04/1983US4407858 Grinding in and thickening with oxygen-free liquids
09/1983
09/27/1983US4406709 Method of increasing the grain size of polycrystalline materials by directed energy-beams
09/13/1983US4404177 Method for producing graphite crystals
09/07/1983EP0088004A2 Method for producing oriented islands of single crystal films
09/06/1983US4402787 Polycrystalline, solid phase, interfaces, microcrystals, seeds, bonding, dissolving, coating, metal compound
08/1983
08/10/1983EP0085406A1 Method of producing single crystal film
08/09/1983US4398094 Equipment and method for annealing semiconductors
07/1983
07/26/1983CA1150668A1 Implantation of vaporized material on melted substrates
07/12/1983US4392894 Superalloy properties through stress modified gamma prime morphology
07/05/1983US4392011 Solar cell structure incorporating a novel single crystal silicon material
05/1983
05/31/1983US4385939 Method of producing a single crystal article
05/25/1983EP0079692A2 Method of producing a single crystal article
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