Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854) |
---|
04/17/2013 | CN103046408A Preparation process of tungsten wire rope |
04/17/2013 | CN103046130A P-type silicon single crystal and method of manufacturing the same |
04/17/2013 | CN103046128A Diameter measurement method for straight pulling single crystal |
04/17/2013 | CN103046122A High-frequency coil provided with auxiliary heating cylinder |
04/17/2013 | CN103046034A Method for matrix strengthening and surface coating of graphite guide cylinder for czochralski silicon single crystal |
04/17/2013 | CN101676443B Neodymium-doped cesium lanthanum tungstate laser crystal and preparation method and application thereof |
04/11/2013 | WO2013051940A1 Method for producing silicon mono-crystals and multi-crystalline silicon ingots |
04/11/2013 | WO2013002540A3 Apparatus and method for growing silicon carbide single crystal |
04/11/2013 | US20130087094 Composite Crucible For Crystal Growth |
04/11/2013 | DE19700403B4 Einkristallziehvorrichtung Single crystal |
04/11/2013 | DE10047929B4 Verfahren und Vorrichtung zur Herstellung von Halbleiter- und Metallscheiben oder -folien Method and apparatus for production of semiconductor and metal disks or sheets |
04/10/2013 | CN202865391U Exhaust hole structure of monocrystalline silicon furnace insulating thermal field |
04/10/2013 | CN202865390U Secondary feeding device for silicon single crystal rod processing |
04/10/2013 | CN202865388U High frequency coil for producing twelve or thirteen silicon cores |
04/10/2013 | CN202865386U High frequency coil for producing fifteen or sixteen silicon cores |
04/10/2013 | CN202865385U High frequency coil for producing thirteen or fourteen silicon cores |
04/10/2013 | CN202865384U High frequency coil for producing twelve or thirteen silicon cores |
04/10/2013 | CN202865383U High frequency coil for producing sixteen or seventeen silicon cores |
04/10/2013 | CN103038004A Production of a crystalline semiconductor material |
04/10/2013 | CN101522961B C-plane sapphire method and apparatus |
04/09/2013 | US8414701 Method for manufacturing silicon single crystal in which a crystallization temperature gradient is controlled |
04/03/2013 | CN202849590U Guide cylinder and single crystal furnace |
04/03/2013 | CN202849589U Single crystal furnace device |
04/03/2013 | CN103025926A Removing a sheet from the surface of a melt using gas jets |
04/03/2013 | CN103025925A Mold shape to optimize thickness uniformity of silicon film |
04/03/2013 | CN103014864A Intermediate infrared luminous crystal material, preparation method and application thereof |
04/03/2013 | CN103014857A Star sapphire wafer and preparation method thereof |
04/03/2013 | CN103014856A Ferric-titanium-doped sapphire wafer and preparation method thereof |
04/03/2013 | CN103014841A Device for clamping and centering seed rod by using upper weighing and pulling method |
04/03/2013 | CN103014840A Method for reducing oxidation stacking fault of head of N-type single crystal |
04/03/2013 | CN103014839A P-type dopant and preparation method thereof |
04/03/2013 | CN103014838A Czochralski preparation method of ultrathin monocrystalline silicon wafer |
04/03/2013 | CN103014837A Secondary charging method for single crystal furnace |
04/03/2013 | CN103014836A Preparation method of N-type czochralski silicon |
04/03/2013 | CN101967677B Single crystal furnace and method for inhibiting swing of flexible shaft thereof |
04/02/2013 | US8409348 Production method of zinc oxide single crystal |
04/02/2013 | US8409347 Method of dopant injection, N-type silicon single-crystal, doping apparatus and pull-up device |
03/28/2013 | WO2013041661A1 Loading silicon in a crucible |
03/28/2013 | DE102007049666B4 Verfahren zur Herstellung von p- -dotierten und epitaktisch beschichteten Halbleiterscheiben aus Silicium Process for the preparation of p-doped and epitaxially coated semiconductor wafers of silicon |
03/27/2013 | CN202830222U Seed rod for crystal growth |
03/27/2013 | CN202830221U Seed rod device |
03/27/2013 | CN202830220U Czochralski method of thermal-field device for crystal growth |
03/27/2013 | CN202830219U Split-structured carbon/carbon crucible |
03/27/2013 | CN202830218U Carbon fiber reinforced carbon composite crucible and composite cylinder component |
03/27/2013 | CN202830217U Crystal growing apparatus |
03/27/2013 | CN103003209A Vitreous silica crucible having a polygonal opening, and method for manufacturing same |
03/27/2013 | CN102995113A Weighing device in artificial crystal growth process |
03/27/2013 | CN102995112A Control system for growth of LED substrate material |
03/27/2013 | CN102995111A Method and device for measuring silicon material liquid level position in single crystal furnace in non-contact manner |
03/27/2013 | CN102995110A Loading method for production of single crystals and pre-loading crucible |
03/27/2013 | CN102995109A Single crystal furnace |
03/27/2013 | CN102995108A Continuous charging silicon single crystal furnace |
03/27/2013 | CN102520749B Power source for Kyropoulos method crystal growth equipment |
03/27/2013 | CN102080256B Quartz crucible |
03/27/2013 | CN102031557B Epitaxial wafer and production method thereof |
03/27/2013 | CN101688322B Wafer/ribbon crystal method and apparatus |
03/27/2013 | CN101377008B 硅单晶提拉方法 Silicon single crystal pulling method |
03/26/2013 | US8404046 Single crystal silicon pulling apparatus, method for preventing contamination of silicon melt, and device for preventing contamination of silicon melt |
03/21/2013 | WO2013037877A1 Solar radiation receiver having an entry window made of quartz glass and method for producing an entry window |
03/21/2013 | WO2012154551A3 Growth of a uniformly doped silicon ingot by doping only the initial charge |
03/20/2013 | CN202809004U Equipment for producing large alpha-Al2O3 single crystal |
03/20/2013 | CN202809000U Automatic switching device for cameras of single crystal furnace |
03/20/2013 | CN202808999U Rotatable heating device for single crystal furnace heat-preservation cylinder |
03/20/2013 | CN202808998U Heat preservation cover for direct-pull single crystal furnace thermal field system |
03/20/2013 | CN202808997U Intermediate insulation barrel for Czochralski crystal furnace thermal field system |
03/20/2013 | CN202808996U Lower insulation barrel for Czochralski crystal furnace thermal field system |
03/20/2013 | CN202808995U Insulation barrel for czochralski crystal growing furnace thermal field system |
03/20/2013 | CN202808994U Insulation device for mono-crystal furnace |
03/20/2013 | CN102978705A Thulium and holmium co-doped gadolinium lithium molybdate laser crystal, and preparation method and application thereof |
03/20/2013 | CN102978702A Compound barium borofluoride, barium borofluoride non-linear optical crystal, and preparation method and use of the barium borofluoride non-linear optical crystal |
03/20/2013 | CN102978699A Growth of boron and gallium co-doped heavy doped p-type monocrystalline silicon and doping method thereof |
03/20/2013 | CN102978698A Growing and doping method for heavy doped P-type monocrystalline silicon with boron and gallium codoped |
03/20/2013 | CN102978693A Seed chuck structure |
03/20/2013 | CN102978692A Rotating and pulling structure for large-size sapphire single crystal growth furnace |
03/20/2013 | CN102978691A Novel heating system of sapphire crystal growing furnace |
03/20/2013 | CN102978690A Novel sapphire crystal growth furnace body cooling system |
03/20/2013 | CN102978689A Novel man-machine interface design for sapphire crystal growing furnace |
03/20/2013 | CN102978688A Cooling process of czochralski single-crystal method |
03/20/2013 | CN102162130B Preparation method of sapphire monocrystalline |
03/20/2013 | CN102127813B High-efficiency mid-infrared laser crystal Pr, Er:YSGG and preparation method thereof |
03/20/2013 | CN101649486B Device and method for growing terbium gallium garnet (TGG) crystal by pulling method |
03/19/2013 | US8398766 Semiconductor wafer composed of monocrystalline silicon and method for producing it |
03/19/2013 | US8398765 Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation |
03/13/2013 | EP2567003A1 Removing a sheet from the surface of a melt using gas jets |
03/13/2013 | EP2566996A1 Carbon tape intended to receive a layer of a semiconductor material |
03/13/2013 | CN202799197U Novel graphite heater |
03/13/2013 | CN202791123U Explosion-proof equipment for vacuum system in sapphire equipment |
03/13/2013 | CN202786514U Rotary weighing mechanism for seed crystals in sapphire furnace |
03/13/2013 | CN202786513U Device for connecting two different materials in sapphirine equipment |
03/13/2013 | CN202786512U Cooling device for vacuum system in sapphirine single crystal furnace equipment |
03/13/2013 | CN202786511U Flexible connection device for vacuum systems in sapphirine equipment |
03/13/2013 | CN202786498U Multi-die crystal growing apparatus based on die guide method |
03/13/2013 | CN202786497U Single crystal drawing furnace |
03/13/2013 | CN202786496U Composite heat shielding device applied to single crystal furnace |
03/13/2013 | CN202786495U Automatic lifting mechanism for auxiliary furnace cover of sapphire furnace |
03/13/2013 | CN202786494U Czochralski crystal growing furnace heat-insulating structure |
03/13/2013 | CN202786493U Czochralski silicon furnace bottom exhaust device |
03/13/2013 | CN102965724A Single crystal furnace with double-layer quartz tube sealing structure by crystal pulling method |
03/13/2013 | CN102965723A Method for inhibiting radial rapid growth of BBO (Barium Boron Oxide) crystal |
03/13/2013 | CN102628184B Method for growing gem crystals by way of vacuum induction heating and device realizing method |