Patents
Sitemap › B82 - Nano-technology › B82Y - Specific uses or applications of nano-structures; Measurement or analysis of nano-structures; Manufacture  or treatment of nano-structures › B82Y 20 - Nano-optics, e.g. quantum optics or photonic crystals
Patents for B82Y 20 - Nano-optics, e.g. quantum optics or photonic crystals (1,668)
02/2002
02/14/2002WO2002012954A1 Electrochromic device based on nanocrystalline materials
01/2002
01/09/2002EP1170627A2 Optical gate and optical phase modulator
01/08/2002US6337870 Semiconductor laser having recombination layer stripes in current blocking structure
10/2001
10/18/2001WO2001077233A1 Oxide composite particle and method for its production, phosphor and method for its production, color filter and method for its manufacture, and color display
10/18/2001US20010030317 Nitride semiconductor light emitting device
10/16/2001US6303277 Pattern forming method and method of manufacturing device having fine pattern
10/11/2001US20010028755 Wavelength-division multiplex optical signal processor and a method of regenerating a wavelength-division multiplexed optical signal
09/2001
09/12/2001EP1132976A2 Optoelectronic material and device application, and method for manufacturing optoelectronic material
08/2001
08/09/2001US20010011733 Epitaxial layer capable of exceeding critical thickness
07/2001
07/17/2001US6261855 Method for fabricating a semiconductor optical device
07/04/2001EP1113542A1 Light and/or electron element
05/2001
05/01/2001US6224667 Method for fabricating semiconductor light integrated circuit
03/2001
03/14/2001EP1083642A2 Broad band semiconductor optical amplifier and optical communication system
01/2001
01/11/2001WO2001003263A1 Light and/or electron element
08/2000
08/02/2000EP1024565A2 Method for fabricating a semiconductor optical device
08/02/2000EP1024564A2 Optical transmission system an optical transmitter
07/2000
07/05/2000EP1017113A1 Nitride semiconductor device
06/2000
06/07/2000EP1006629A2 Compound semiconductor light emitting device
04/2000
04/04/2000US6046096 Method of fabricating a device including compound semiconductor crystal and method of fabricating a compound semiconductor layer structure
03/2000
03/14/2000US6036771 Method of manufacturing optical semiconductor device
02/2000
02/01/2000CA2164492C Method of driving semiconductor laser with wide modulation band, optical communication method, semiconductor laser device, node, and optical communication system
12/1999
12/28/1999US6008675 Polarization-mode selective semiconductor laser with a bending channel stripe, apparatus including the same and optical communication system using the same
12/01/1999EP0960444A1 Passivation capping layer for ohmic contact in ii-vi semiconductor light transducing device
11/1999
11/24/1999EP0959540A2 Semiconductor laser having effective output increasing function
08/1999
08/10/1999US5937118 Quantum synthesizer, THz electromagnetic wave generation device, optical modulation device, and electron wave modulation device
06/1999
06/29/1999US5917637 Method of and device for driving optical modulator, and optical communications system
06/01/1999CA2139140C A method for fabricating a semiconductor photonic integrated circuit
04/1999
04/28/1999EP0911929A2 Semiconductor laser and method for manufacturing the same
04/28/1999CN1215239A Semiconductor laser and making method thereof
04/14/1999EP0908988A2 Light-emitting device and fabricating method thereof
04/07/1999CN1213197A Method of manufacturing optical semiconductor device
03/1999
03/31/1999EP0905798A2 Method of manufacturing optical semiconductor device
03/30/1999CA2137328C Oscillation polarization mode selective semiconductor laser, light source apparatus and optical communication system using the laser
12/1998
12/22/1998US5852304 Optical communication system
12/15/1998US5850408 Method of driving semiconductor laser with wide modulation band, optical communication method, semiconductor laser device, node, and optical communication system
12/08/1998US5848085 Semiconductor quantum well structure and semiconductor device using the same
11/1998
11/24/1998US5841156 Quantum well laser, transistor; improved lattice constant
11/24/1998US5841152 Optical semiconductor device provided with strained quantum well layer formed on a ternary compound semiconductor substrate
05/1998
05/26/1998US5757828 Semiconductor laser device, method for driving the same, and optical communication system using the same
04/1998
04/01/1998EP0833395A2 Method of fabricating a device including compound semiconductor crystal and method of fabricating a compound semiconductor layer structure
08/1997
08/05/1997US5654814 Optical semiconductor apparatus and optical communication system using the apparatus
02/1997
02/25/1997US5606176 Strained quantum well structure having variable polarization dependence and optical device including the strained quantum well structure
12/1996
12/31/1996US5590145 Light-emitting apparatus capable of selecting polarization direction, optical communication system, and polarization modulation control method
12/17/1996US5586131 Oscillation polarization mode selective semiconductor laser, light source apparatus and optical communication system using the laser
08/1996
08/27/1996US5550393 Semiconductor layer structure having distributed strain and optical semiconductor device including such strained layer
08/06/1996US5543353 Method of manufacturing a semiconductor photonic integrated circuit
07/1996
07/10/1996EP0721241A2 Semiconductor quantum well structure and semiconductor device using the same
06/1996
06/26/1996EP0718937A2 Method of driving a polarization mode selective semiconductor laser with a wide modulation band, and an optical communication system
12/1995
12/05/1995US5473173 Quantum well structure having differentially strained quantum well layers
09/1995
09/06/1995EP0670642A1 Light-emitting apparatus capable of selecting polarization direction, optical communication system, and polarization modulation control method
07/1995
07/05/1995EP0661783A1 Method for fabricating semiconductor light integrated circuit
06/1995
06/14/1995EP0657975A2 Oscillation polarization mode selective semiconductor laser, light source apparatus and optical communication system using the laser
05/1995
05/23/1995US5418374 Ridge or groove; phosphorus containing layer; light emitters
05/09/1995US5414549 Semiconductor optical amplifying apparatus
04/1995
04/05/1995EP0646951A2 Semiconductor layer structure having distributed strain and optical semiconductor device including such strained lyer
03/1995
03/29/1995EP0645858A2 Strained quantum well structure having variable polarization dependence and optical device inducing the strained quantum well structure
02/1995
02/21/1995US5392306 Multiple quantum well structure and semiconductor device using the same
02/07/1995US5388117 Polarization insensitive semiconductor optical amplifier and an optical communication system using the same
08/1994
08/24/1994EP0612129A1 A polarization insensitive semiconductor optical amplifier and an optical communication system using the same
05/1994
05/03/1994US5309275 Semiconductor optical amplifying apparatus
04/1994
04/26/1994US5306924 Semiconductor device with strained-layer superlattice
04/13/1994EP0591864A2 Optical semiconductor apparatus and optical communication system using the apparatus
02/1993
02/23/1993US5189680 Visible light laser diode
09/1992
09/09/1992EP0502442A2 Semiconductor luminous element and superlattice structure
01/1992
01/02/1992EP0463569A2 Semiconductor optical amplifying apparatus
12/1991
12/17/1991US5073893 Semiconductor structure and semiconductor laser device
10/1991
10/23/1991EP0452869A1 Method of making a semiconductor device.
05/1989
05/30/1989US4835578 Semiconductor device having a quantum wire and a method of producing the same
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